Thermal isolation using vertical structures

    公开(公告)号:US06566725B1

    公开(公告)日:2003-05-20

    申请号:US09628201

    申请日:2000-07-28

    Applicant: Kyle Lebouitz

    Inventor: Kyle Lebouitz

    Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

    Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
    3.
    发明申请
    Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto 审中-公开
    用于蚀刻半导体样品的装置和用于通过升华提供气体的源

    公开(公告)号:US20050230046A1

    公开(公告)日:2005-10-20

    申请号:US10979508

    申请日:2004-11-02

    CPC classification number: H01J37/3244 H01J37/32458

    Abstract: An etching apparatus for etching semi combustion samples may include one or more variable volume expansion chambers, two or more fixed volume expansion chambers, or combinations thereof in fluid communication with an etching chamber and a source of etching gas, such as xenon difluoride. The apparatus may further include a source of a mixing gas. An etching apparatus may also include a source of etching gas, an etching chamber in fluid communication with the source of etching gas, a flow controller connected between the source of etching gas and the etching chamber, and a vacuum pump in fluid communication with the etching chamber. A source for providing a gas by sublimation from a solid material is also provided, including a vacuum tight container and a mesh mounted in the interior of the vacuum tight container, wherein the mesh is adapted to receive and restrain the solid material.

    Abstract translation: 用于蚀刻半燃烧样品的蚀刻装置可以包括一个或多个可变体积膨胀室,两个或更多个固定体积膨胀室或其组合,其与蚀刻室和蚀刻气体源例如二氯化氙流体连通。 该装置还可以包括混合气体源。 蚀刻装置还可以包括蚀刻气体源,与蚀刻气体源流体连通的蚀刻室,连接在蚀刻气体源和蚀刻室之间的流量控制器以及与蚀刻流体连通的真空泵 房间。 还提供了用于通过从固体材料升华提供气体的源,包括真空密封容器和安装在真空容器的内部的网,其中网适于接收和约束固体材料。

    Thermal isolation using vertical structures

    公开(公告)号:US06653239B2

    公开(公告)日:2003-11-25

    申请号:US09682894

    申请日:2001-10-30

    Applicant: Kyle Lebouitz

    Inventor: Kyle Lebouitz

    Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

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