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    Process for collective manufacturing of small volume high precision membranes and cavities
    101.
    发明授权
    Process for collective manufacturing of small volume high precision membranes and cavities 有权
    小容量高精度膜和腔体的集体制造工艺

    公开(公告)号：US07838393B2

    公开(公告)日：2010-11-23

    申请号：US12298894

    申请日：2007-04-26

    Applicant: Joel Collet ,  Stephane Nicolas ,  Christian Pisella

    Inventor： Joel Collet ,  Stephane Nicolas ,  Christian Pisella

    IPC: H01L21/46 ,  H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/0015 ,  B81B2201/054 ,  B81C1/00357 ,  B81C2201/019 ,  F04B43/046

    Abstract: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

    Abstract translation: 本发明涉及一种用于集体制造具有给定厚度d的空腔和/或膜（24）的方法，其中所述晶片被称为绝缘体上半导体层，包括至少一个具有厚度d的半导体表面层 绝缘层本身被支撑在基板上，该方法包括：蚀刻具有厚度d的半导体表面层，绝缘层形成停止层，以在表面层中形成所述空腔和/或膜。

    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES
    102.
    发明申请
    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES 审中-公开
    具有以不对称速率移动的层的MEMS器件

    公开(公告)号：US20090256218A1

    公开(公告)日：2009-10-15

    申请号：US12488366

    申请日：2009-06-19

    Applicant: Marc Mignard ,  Lior Kogut

    Inventor： Marc Mignard ,  Lior Kogut

    IPC: H01L29/84 ,  H01L49/00 ,  H01L21/02

    CPC classification number: G02B26/001 ,  B81B3/0078 ,  B81B2201/047 ,  B81B2201/054 ,  B81B2203/053 ,  G09G3/3466 ,  G09G2300/06

    Abstract: A microelectromechanical (MEMS) device includes a substrate and a movable layer mechanically coupled to the substrate. The movable layer moves from a first position to a second position at a first rate and from the second position to the first position at a second rate faster than the first rate. The MEMS device further includes an adjustable cavity defined between the substrate and the movable layer and containing a fluid. The MEMS device further includes a fluid conductive element through which the fluid flows at a first flowrate from inside the cavity to outside the cavity upon movement of the movable layer from the second position to the first position and through which the fluid flows at a second flowrate slower than the first flowrate from outside the cavity to inside the cavity upon movement of the movable layer from the first position to the second position.

    Abstract translation: 微机电（MEMS）装置包括基板和机械耦合到基板的可移动层。 可移动层以第一速率从第一位置移动到第二位置，并且以比第一速率快的第二速率从第二位置移动到第一位置。 MEMS器件还包括限定在衬底和可移动层之间并包含流体的可调节空腔。 MEMS装置还包括流体导电元件，当可移动层从第二位置移动到第一位置时，流体从腔体内部以第一流量流动到空腔外部，并且流体以第二流量流动 当从可移动层从第一位置移动到第二位置时，其比从空腔外部到腔体内部的第一流速慢。

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