Method for fabricating polymer ridged waveguides by using tilted immersion lithography
    101.
    发明申请
    Method for fabricating polymer ridged waveguides by using tilted immersion lithography 失效
    使用倾斜浸没式光刻技术制造聚合物脊状波导的方法

    公开(公告)号:US20080305438A1

    公开(公告)日:2008-12-11

    申请号:US12000348

    申请日:2007-12-12

    Abstract: This invention is a method for fabricating polymer ridged waveguides by using tilted immersion lithography. It includes the steps of: 1. preparing step; 2. calculating step; 3. first tilted immersion lithography step; 4. rotating 180-degree step; 5. second tilted immersion lithography step; and 6. finishing step. By these two tilted immersion lithography steps as well as the rotating 180-degree step between them, the UV light refracts and makes the photoresist forming a 45-degree ridged waveguide. This fabricating method is simple and stable. It can reduce the fabricating time and cost. Also, it is suitable for mass production and it has wide-ranged applications.

    Abstract translation: 本发明是通过使用倾斜浸没式光刻法制造聚合物脊状波导的方法。 它包括以下步骤:1.准备步骤; 计算步骤 第一倾斜浸没光刻步骤; 旋转180度步; 第二倾斜浸没光刻步骤; 和6.完成步骤。 通过这两个倾斜的浸没光刻步骤以及它们之间的旋转180度的步骤,UV光折射并使光致抗蚀剂形成45度的脊状波导。 该制造方法简单稳定。 它可以减少制造时间和成本。 而且适用于大批量生产,具有广泛的应用。

    Method to print photoresist lines with negative sidewalls
    103.
    发明授权
    Method to print photoresist lines with negative sidewalls 失效
    打印具有负侧壁的光刻胶线的方法

    公开(公告)号:US07368227B2

    公开(公告)日:2008-05-06

    申请号:US11588574

    申请日:2006-10-27

    CPC classification number: G03F7/40 G03F7/201 G03F7/2022 G03F7/2059 Y10S430/143

    Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.

    Abstract translation: 从负极或正音色化学放大抗蚀剂产生负的壁角是非常困难的,特别是通过电子束光刻。 现在已经通过首先以常规方式形成光致抗蚀剂基座,随后用电子暴露而克服了这个问题。 然后,给出第二次开发处理。 这导致从侧壁去除附加材料,所述去除在基底处至少在基座的顶表面处最大,导致负斜面的侧壁。 还讨论了该方法在用于形成用于垂直磁性写入器的极尖的处理中的应用。

    Method of manufacturing nozzle plate

    公开(公告)号:US20070054221A1

    公开(公告)日:2007-03-08

    申请号:US11514898

    申请日:2006-09-05

    Inventor: Tsutomu Yokouchi

    Abstract: The method manufactures a nozzle plate including a nozzle having a tapered section where a diameter gradually decreases from a liquid supply side toward a liquid ejection side, and a straight section which is substantially cylindrical and is situated nearer a liquid ejection side of the tapered section. The method comprises the steps of: forming a first photosensitive material in a form of a layer on a substrate; placing a straight section forming member including a hole section having a shape substantially corresponding to a shape of the straight section, on the first photosensitive material; filling a second photosensitive material into the hole section; radiating a prescribed light toward the straight section forming member, in such a manner that substantially all of the second photosensitive material is exposed and the first photosensitive material is exposed in a tapered shape having a diameter which gradually increases toward the substrate; removing the straight section forming member from the first photosensitive material and the second photosensitive material; carrying out development of the first photosensitive material and the second photosensitive material after removing the straight section forming member from the first photosensitive material and the second photosensitive material; forming a metal layer which is to serve as the nozzle plate, on the substrate, by a plating method where the first photosensitive material and the second photosensitive material left on the substrate after carrying out the development of the first photosensitive material and the second photosensitive material are used as a mold; and removing the metal layer from the substrate, the first photosensitive material and the second photosensitive material.

    Source multiplexing in lithography
    105.
    发明授权
    Source multiplexing in lithography 失效
    光刻中的光源复用

    公开(公告)号:US07183565B2

    公开(公告)日:2007-02-27

    申请号:US11196570

    申请日:2005-08-02

    CPC classification number: G03F7/7005 G03F7/201

    Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

    Abstract translation: 用于极紫外(EUV)光刻系统的照明系统可以包括多个EUV光源。 当照射面罩时,系统可以组合来自多个源的光。

    Method and apparatus for writing apodized patterns

    公开(公告)号:US07043121B2

    公开(公告)日:2006-05-09

    申请号:US10310205

    申请日:2002-12-05

    Abstract: In some aspects, the invention relates to methods and systems for creating apodized periodic structures, such as apodized gratings in fibers. To create the periodic structures, a photosensitive medium is exposed to a spatially-varying radiation pattern. During the exposure, the position of the radiation pattern can oscillate with the respect to the photosensitive medium, thereby changing the average local refractive index of the medium. These methods and systems may be used to create regular structures in any appropriate medium, such as doped glasses and photosensitive polymers.

    Lithographic method for wiring a side surface of a substrate
    108.
    发明申请
    Lithographic method for wiring a side surface of a substrate 失效
    用于布线基板侧面的平版印刷方法

    公开(公告)号:US20060051679A1

    公开(公告)日:2006-03-09

    申请号:US10528946

    申请日:2003-09-26

    Abstract: In a lithographic proximity method for wiring an end or internal side surface of a substrate the required exposure of strips (76), defining the wiring pattern, is performed by means of a mask (70) comprising a diffraction structure (74) to deflect exposure radiation (b) to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring.

    Abstract translation: 在用于布线基板的端侧或内侧表面的光刻接近方法中,通过包括衍射结构(74)的掩模(70)来执行限定布线图案的条(76)的所需曝光以偏转曝光 辐射(b)到侧面。 使用垂直入射到掩模上的曝光光束,从而获得增强的接近间隙宽度变化的公差。 该方法允许制造精确和精细的接线。

    Source multiplexing in lithography
    110.
    发明申请
    Source multiplexing in lithography 有权
    光刻中的光源复用

    公开(公告)号:US20050263724A1

    公开(公告)日:2005-12-01

    申请号:US11196231

    申请日:2005-08-02

    CPC classification number: G03F7/7005 G03F7/201

    Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

    Abstract translation: 用于极紫外(EUV)光刻系统的照明系统可以包括多个EUV光源。 当照射面罩时,系统可以组合来自多个源的光。

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