Abstract:
Achromatic optics may be employed in spectroscopic measurement systems. The achromatic optics comprises a spherical mirror receiving a beam of radiation in a direction away from its axis and a pair of lenses: a positive lens and a negative meniscus lens. The negative meniscus lens corrects for the spherical aberration caused by off-axis reflection from the spherical mirror. The positive lens compensates for the achromatic aberration introduced by the negative lens so that the optics, as a whole, is achromatic over visible and ultraviolet wavelengths. Preferably, the two lenses combined have zero power or close to zero power. By employing a spherical mirror, it is unnecessary to employ ellipsoidal or paraboloidal mirrors with artifacts of diamond turning which limit the size of the spot of the sample that can be measured in ellipsometry, reflectometry or scatterometry.
Abstract:
A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals. At least one of the orientations of the plane of polarization is substantially stationary when the detection takes place. To have as small a footprint as possible, one employs an optical device that includes a first element directing a polychromatic beam of electromagnetic radiation to the structure and a second optical element collecting radiation from the structure where the two elements form an integral unit or are attached together to form an integrated unit. To reduce the footprint, the measurement instrument and the wafer are both moved. In one embodiment, both the apparatus and the wafer undergo translational motion transverse to each other. In a different arrangement, one of the two motions is translational and the other is rotational. Any one of the above-described embodiments may be included in an integrated processing and detection apparatus which also includes a processing system processing the sample, where the processing system is responsive to the output of any one of the above embodiments for adjusting a processing parameter.
Abstract:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a thickness of a structure on a specimen and at least one additional property of the specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Abstract:
In order to obtain a simple and highly reliable method of polarimetry, there is provided a method of polarimetry characterized by calculating an angle of rotation from discrete 2 or 3 measuring points, and performing again the measurement on the measuring point which is not effective.
Abstract:
A defect inspection apparatus for inspecting a fine circuit pattern with high resolution to detect a defective portion is constructed to have an objective lens for detecting an image of a sample, a laser illumination unit for illuminating the sample through the objective lens, a unit for reducing the coherence of the laser illumination, an accumulation type detector, and a unit for processing the detected image signal.
Abstract:
The invention concerns an optical measurement arrangement having an ellipsometer, in which an incident beam (16) of polarized light is directed at an angle of incidence nullnull0null onto a measurement location (M) on the surface of a specimen (P). Information concerning properties of the specimen (P), preferably concerning layer thicknesses and optical material properties such as refractive index n, extinction coefficient k, and the like, is obtained from an analysis of a return beam (17) reflected from the specimen (P). The incident beam (16) is directed by a mirror objective (15) onto the surface of the specimen (P). The return beam (17) is also captured by the mirror objective (15). The result is to create an optical measurement arrangement, operating on the ellipsometric principle, which has a simple, compact configuration and permits a high measurement accuracy down to the sub-nanometer range.
Abstract:
This invention relates to a method of measuring the internal structure (packing structure or dispersion condition of particulate material) of a composite filled with particles having an irregular matrix by observations based on its optical anisotropy, in which the internal structure (packing structure or dispersion condition of particulate material) of the composite obtained by mixing particulate material as raw material with a liquid material is made visible by utilizing the photoelasticity based on local rearrangement of liquid material molecules or difference of refractive indices of the particulate material and liquid material, and the structure thereof are observed, and an evaluation device using this principle of measurement.
Abstract:
An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135null to 225null, and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously. A processor determines the polarization state of the beam as it impinges the analyzer from the light intensities measured by the detector.
Abstract:
This invention relates to ellipsometry and reflectometry optical metrology tools that are used to evaluate semiconductor wafers and is directed to reducing errors associated with material surrounding a desired measurement area or pad, either by minimizing the uncertainties in positioning the measurement beam or by taking into account the effects of the surrounding material in analyzing the measured data. One aspect the present invention utilizes a technique where initially one purposefully aims to place the optical spot of the measurement beam a few microns away from the center of the target pad. Then a series of measurements are made with each measurement separated by a small stage jog as the optical spot is scanned over the measurement pad. Provided the surrounding material is the same on both sides of the pad, one finds that the data invariably has either a cup or inverted nullUnull shape or an inverted cup or nullUnull shape when viewed as a function of position. The minimum or maximum of the curve is then used to identify the center of the pad. Another aspect the present invention makes use of a novel method of data analysis that allows for the correction of the effects of the surrounding material in analyzing the data. In essence, the data collected at the center of the pad is treated as being created by a superposition of light coming from the pad material itself and light coming from the surrounding material. The influence of the two materials is weighted by the proportion of the light that reflects off the pad as compared with the light that reflects off of the surrounding material. Given knowledge of both the dimensions of the pad and the size and profile of the beam spot, the resulting signal may be mathematically modeled according to the present invention to account for both the contribution of the light reflected from the pad and the light reflected from the surrounding material.
Abstract:
Simultaneous use of wavelengths in at least two ranges selected from RADIO, MICRO, FIR, IR, NIR-VIS-NUV, UV, DUV, VUV EUV, XRAY in a regression procedure to evaluate parameters in mathematical dispersion structures to model dielectric functions.