Abstract:
A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.
Abstract:
An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm2 and equal to or lower than a fluence of the main pulse laser beam.
Abstract translation:远端紫外线(EUV)发生系统被配置为通过提高等离子体产生的效率来提高激光系统的能量对EUV能量的转换效率。 EUV生成系统包括被配置为将目标朝向室内的等离子体产生区域输出的目标生成单元。 激光系统被配置为产生第一预脉冲激光束,第二预脉冲激光束和主脉冲激光束,使得靶被第一预脉冲激光束照射,第二预脉冲激光 光束和主脉冲激光束。 此外,EUV生成系统包括:控制器,被配置为控制激光系统,使得第二预脉冲激光束的能量密度等于或高于1J / cm 2,并且等于或低于主脉冲的能量密度 激光束。
Abstract:
An extreme ultraviolet light generation apparatus may include a chamber containing a plasma generation region irradiated by a pulse laser beam from a laser apparatus, a target supply device configured to supply a plurality of targets consecutively to the plasma generation region in the chamber, a target detection unit configured to detect a target outputted from the target supply device, and a laser controller configured to control the laser apparatus; the laser controller generating a light emission trigger instructing a laser device included in the laser apparatus to emit a pulse laser beam, and outputting the generated light emission trigger to the laser apparatus, in accordance with a detection signal from the target detection unit; and the laser controller adjusting generation of the light emission trigger outputted consecutively to the laser apparatus so that a time interval of the light emission trigger is within a predetermined range.
Abstract:
An excimer laser apparatus includes a gas supply unit, connected to a first receptacle that holds a first laser gas containing halogen gas and a second receptacle that holds a second laser gas having a lower halogen gas concentration than the first laser gas, that supplies the first laser gas and the second laser gas to the interior of the laser chamber. Gas pressure control in which the gas supply unit supplies the second laser gas to the interior of the laser chamber or a gas exhaust unit partially exhausts gas from within the laser chamber, and partial gas replacement control in which the gas supply unit supplies the first laser gas and the second laser gas to the interior of the laser chamber and the gas exhaust unit partially exhausts gas from within the laser chamber sequentially, may be selectively performed.
Abstract:
An apparatus used with a laser apparatus may include a chamber, a target supply for supplying a target material to a region inside the chamber, a laser beam focusing optical system for focusing a laser beam from the laser apparatus in the region, and an optical system for controlling a beam intensity distribution of the laser beam.
Abstract:
A laser beam controlling device may include: a guide laser device; a guide laser beam wavefront adjuster provided in a beam path of the guide laser beam outputted from the guide laser device; a beam combiner configured to adjust travel directions of a laser beam outputted from a laser system and the guide laser beam outputted from the guide laser beam wavefront adjuster to coincide with each other, a both beam wavefront adjuster provided in a beam path of both the laser beam and the guide laser beam outputted from the beam combiner, a beam monitor provided in a beam path of both the laser beam and the guide laser beam outputted from the both beam wavefront adjuster, and a controller configured to control the guide laser beam wavefront adjuster and the both beam wavefront adjuster based on detection results at the beam monitor with respect to both the laser beam and the guide laser beam.
Abstract:
A laser apparatus may include a master oscillator configured to output a pulse laser beam, an amplifier disposed in a light path of the pulse laser beam, a wavelength selection element disposed in the light path of the pulse laser beam and configured to transmit light of a selection wavelength at higher transmittance than transmittance of light of other wavelengths, and a controller configured to change the selection wavelength of the wavelength selection element.
Abstract:
A discharge-pumped gas laser device may include a laser chamber, a pair of discharge electrodes provided in the laser chamber, a fan with a magnetic bearing being provided in the laser chamber and configured to be capable of circulating a gas in the laser chamber, a housing configured to contain the laser chamber, and a magnetic bearing controller connected to the magnetic bearing electrically, being capable of controlling the magnetic bearing, and provided in the housing separately from the laser chamber.
Abstract:
Included are a laser light source (10) configured to output pulsed laser light with an intensity peak in a wavelength range from 8 μm to 11 μm and a pulse width of 30 ns or less, an optical system (40) configured to condense the pulsed laser light toward a workpiece (70) and allow the workpiece to be irradiated with the condensed pulsed laser light, and a controller (60) configured to control a repetition frequency of the pulsed laser light that is to be outputted from the laser light source (10) to be 25 kHz or greater. This suppresses thermal diffusion and increases an absorption coefficient of a laser irradiated part of the workpiece (70), and suppresses a formed hole from being in a tapered shape and suppresses formation of uplifting around the hole upon performing of minute drilling.
Abstract:
A target supply device may include a tank having a nozzle, a first electrode provided with a first through-hole, a second electrode provided with a second through-hole, a third electrode disposed within the tank, an anchoring portion configured to anchor the first electrode and the second electrode to the tank so that insulation among the nozzle, the first electrode, and the second electrode is maintained, and so that a center axis of the nozzle is positioned within the first through-hole and the second through-hole, a first projecting portion that is an integrated part of at least one of the first electrode and the second electrode and that is configured to project toward the nozzle, and a second projecting portion that is an integrated part of at least the second electrode and that is configured to project so as to be positioned between the first electrode and the second electrode.