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    MEMS capacitor with conductively tethered moveable capacitor plate
    112.
    发明授权
    MEMS capacitor with conductively tethered moveable capacitor plate 失效
    具有导电束缚的可移动电容器板的MEMS电容器

    公开(公告)号：US07742275B2

    公开(公告)日：2010-06-22

    申请号：US11848521

    申请日：2007-08-31

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H01G5/00 ,  H01G7/00

    CPC classification number: H01G5/16 ,  H01H2057/006

    Abstract: A capacitive device including at least one actuator structure formed on a substrate is provided. The capacitive device further includes a moveable structure formed on the substrate and mechanically coupled to the at least one actuator structure. The moveable structure includes a moveable capacitive plate and a bridge, formed substantially planar to the moveable capacitive plate. The bridge is used to mechanically and electrically couple the moveable capacitive plate to a signal line formed on the substrate such that the moveable capacitive plate moves up or down based on a force generated by the at least one actuator structure.

    Abstract translation: 提供了包括形成在基板上的至少一个致动器结构的电容性装置。 电容性装置还包括形成在基板上并机械耦合到至少一个致动器结构的可移动结构。 可移动结构包括可移动电容板和形成为可移动电容板的基本上平面的桥。 该桥用于将可移动电容板机械地和电耦合到形成在基板上的信号线，使得可移动电容板基于由至少一个致动器结构产生的力而向上或向下移动。

    MICROELECTROMECHANICAL SYSTEMS COMPONENT AND METHOD OF MAKING SAME
    114.
    发明申请
    MICROELECTROMECHANICAL SYSTEMS COMPONENT AND METHOD OF MAKING SAME 有权
    微电子系统组件及其制造方法

    公开(公告)号：US20090218642A1

    公开(公告)日：2009-09-03

    申请号：US12040737

    申请日：2008-02-29

    Applicant: Melvy F. Miller ,  Daniel N. Koury, JR. ,  Lianjun Liu

    Inventor： Melvy F. Miller ,  Daniel N. Koury, JR. ,  Lianjun Liu

    IPC: H01L29/84 ,  H01L21/00

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81C2201/019 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: A microelectromechanical systems (MEMS) component 20 includes a portion 32 of a MEMS structure 30 formed on a semiconductor substrate 34 and a portion 36 of the structure 30 formed in a non-semiconductor substrate 22. The non-semiconductor substrate 22 is in fixed communication with the semiconductor substrate 34 with the portion 32 of the MEMS structure 30 being interposed between the substrates 34 and 22. A fabrication method 96 entails utilizing semiconductor thin-film processing techniques to form the portion 32 on the semiconductor substrate 34, and utilizing a lower cost processing technique to fabricate the portion 36 in the non-semiconductor substrate 22. The portions 32 and 36 are coupled to yield the MEMS structure 30, and the MEMS structure 30 can be attached to another substrate as needed for additional functionality.

    Abstract translation: 微机电系统（MEMS）部件20包括形成在半导体衬底34上的MEMS结构30的部分32和形成在非半导体衬底22中的结构30的部分36.非半导体衬底22处于固定通信 其中半导体衬底34与MEMS结构30的部分32插入在衬底34和22之间。制造方法96需要利用半导体薄膜处理技术在半导体衬底34上形成部分32，并且利用较低的 成本处理技术以制造非半导体衬底22中的部分36.部分32和36被耦合以产生MEMS结构30，并且可以根据需要将MEMS结构30附接到另一衬底以用于附加功能。

    Piezoelectric MEMS switches and methods of making
    115.
    发明授权
    Piezoelectric MEMS switches and methods of making 失效
    压电MEMS开关及制作方法

    公开(公告)号：US07556978B2

    公开(公告)日：2009-07-07

    申请号：US11363791

    申请日：2006-02-28

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H01L21/00

    CPC classification number: H01H57/00 ,  H01H2057/006

    Abstract: MEMS piezoelectric switches 100 that provide advantages of compact structure ease of fabrication in a single unit, and that are free of high temperature-induced morphological changes of the contact materials and resultant adverse effects on properties. High temperature-induced morphological changes refer to changes that occur during fabrication when metallic contacts such as radio frequency lines 125, 130 and shorting bars 150 are exposed to temperatures required to anneal a piezoelectric layer or those temperatures encountered during high temperature deposition of the piezoelectric layer, if such process is used instead.

    Abstract translation: MEMS压电开关100，其提供在单个单元中制造结构紧凑的结构的优点，并且没有高温引起的接触材料的形态变化和对性能的不利影响。 高温诱导的形态变化是指在制造期间发生的变化，当诸如射频线125,130和短路棒150的金属接触暴露于退火压电层所需的温度或压电层的高温沉积期间遇到的温度 ，如果使用这样的过程。

    MEMS CAPACITOR WITH CONDUCTIVELY TETHERED MOVEABLE CAPACITOR PLATE
    116.
    发明申请
    MEMS CAPACITOR WITH CONDUCTIVELY TETHERED MOVEABLE CAPACITOR PLATE 失效
    具有导电移动电容板的MEMS电容器

    公开(公告)号：US20090059465A1

    公开(公告)日：2009-03-05

    申请号：US11848521

    申请日：2007-08-31

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H01G5/04

    CPC classification number: H01G5/16 ,  H01H2057/006

    Abstract: A capacitive device including at least one actuator structure formed on a substrate is provided. The capacitive device further includes a moveable structure formed on the substrate and mechanically coupled to the at least one actuator structure. The moveable structure includes a moveable capacitive plate and a bridge, formed substantially planar to the moveable capacitive plate. The bridge is used to mechanically and electrically couple the moveable capacitive plate to a signal line formed on the substrate such that the moveable capacitive plate moves up or down based on a force generated by the at least one actuator structure.

    Abstract translation: 提供了包括形成在基板上的至少一个致动器结构的电容性装置。 电容性装置还包括形成在基板上并机械耦合到至少一个致动器结构的可移动结构。 可移动结构包括可移动电容板和形成为可移动电容板的基本上平面的桥。 该桥用于将可移动电容板机械地和电耦合到形成在基板上的信号线，使得可移动电容板基于由至少一个致动器结构产生的力而向上或向下移动。

    MICROMECHANICAL DEVICE WITH PIEZOELECTRIC AND ELECTROSTATIC ACTUATION AND METHOD THEREFOR
    117.
    发明申请
    MICROMECHANICAL DEVICE WITH PIEZOELECTRIC AND ELECTROSTATIC ACTUATION AND METHOD THEREFOR 有权
    具有压电和静电驱动的微电子设备及其方法

    公开(公告)号：US20090026880A1

    公开(公告)日：2009-01-29

    申请号：US11828902

    申请日：2007-07-26

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H02N1/00 ,  H01L41/04 ,  H02N2/00

    CPC classification number: H02N1/008 ,  H01G5/18 ,  H01L41/094

    Abstract: A MEMS device uses both piezoelectric actuation and electrostatic actuation and also provides enough electrostatic force to enable very low voltage operation. As the electrostatic actuation uses DC and the piezoelectric actuation uses high frequency, the structure of the device minimizes the coupling of the two actuator structures to reduce noise. In addition, for some embodiments, the location of the physical structures of the piezoelectric actuator and electrostatic actuator generates higher contact force with lower voltage. For some embodiments, the piezoelectric actuator and electrostatic actuator of the device are connected at the contact shorting bar or capacitor plate location. This makes the contact shorting bar or capacitor plate the focal point of the forces generated by all of the actuators, thereby increasing the switch contact force.

    Abstract translation: MEMS器件使用压电驱动和静电驱动，并且还提供足够的静电力以实现非常低的电压操作。 由于静电致动使用DC并且压电致动器使用高频率，因此该装置的结构将两个致动器结构的耦合最小化以减少噪声。 此外，对于一些实施例，压电致动器和静电致动器的物理结构的位置产生具有较低电压的较高接触力。 对于一些实施例，装置的压电致动器和静电致动器在接触短路杆或电容器板位置连接。 这使得接触短路棒或电容器板是由所有致动器产生的力的焦点，从而增加开关接触力。

    INTEGRATED CIRCUIT HAVING RE-CONFIGURABLE BALUN CIRCUIT AND METHOD THEREFOR
    118.
    发明申请
    INTEGRATED CIRCUIT HAVING RE-CONFIGURABLE BALUN CIRCUIT AND METHOD THEREFOR 审中-公开
    具有可重新配置的BALUN电路的集成电路及其方法

    公开(公告)号：US20080278258A1

    公开(公告)日：2008-11-13

    申请号：US11745486

    申请日：2007-05-08

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H03H7/42

    CPC classification number: H03H7/42 ,  H03H7/0153 ,  H03H7/1775

    Abstract: A balun circuit comprises a balun transformer having first and second windings, and first and second variable capacitors. The first variable capacitor has a first plate electrode coupled to the first terminal of the first winding, and a second plate electrode coupled to the second terminal of the first winding. The second variable capacitor has a first plate electrode coupled to the first terminal of the second winding, and a second plate electrode coupled to the second terminal of the second winding. The first variable capacitor is tunable between first and second capacitance values. The second variable capacitor is tunable between third and fourth capacitance values. Tuning the variable capacitors allows the balun circuit to be re-configurable to operate in both the first frequency band and the second frequency band.

    Abstract translation: 平衡 - 不平衡变换器电路包括具有第一和第二绕组的平衡 - 不平衡转换器，以及第一和第二可变电容器。 第一可变电容器具有耦合到第一绕组的第一端子的第一板电极和耦合到第一绕组的第二端子的第二板电极。 第二可变电容器具有耦合到第二绕组的第一端子的第一板电极和耦合到第二绕组的第二端子的第二板电极。 第一可变电容器可在第一和第二电容值之间调节。 第二可变电容器可在第三和第四电容值之间调节。 调谐可变电容器允许平衡 - 不平衡转换电路可重新配置为在第一频带和第二频带两者中工作。

    Methods and apparatus for RF shielding in vertically-integrated semiconductor devices
    119.
    发明授权
    Methods and apparatus for RF shielding in vertically-integrated semiconductor devices 有权
    垂直集成半导体器件中射频屏蔽的方法和装置

    公开(公告)号：US07446017B2

    公开(公告)日：2008-11-04

    申请号：US11444091

    申请日：2006-05-31

    Applicant: Lianjun Liu ,  Philip H. Bowles ,  Li Li

    Inventor： Lianjun Liu ,  Philip H. Bowles ,  Li Li

    IPC: H01L21/30

    CPC classification number: H01L23/5225 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: A patterned ground shield (PGS) (130) in a vertically-integrated structure includes a patterned conductor (e.g., a metallic layer) provided between a first substrate (110) having a first semiconductor device (1120 formed therein and a second substrate (120) having a second device (122) formed therein. A bonding layer (140) is used to bond the vertically-integrated die and/or wafers. The PGS may be formed on a surface (e.g., the backside) of the second (topmost) substrate, or may be formed over the first semiconductor device—for example, on a dielectric layer formed over the first semiconductor device. The PGS may consist of parallel stripes in various patterns, or may be spiral-shaped, lattice-shaped, or the like.

    Abstract translation: 在垂直一体化结构中的图案化接地屏蔽（PGS）（130）包括设置在具有第一半导体器件的第一衬底（1120）和第二衬底（120）之间的图案化导体（例如，金属层） ），其中形成有第二器件（122），接合层（140）用于将垂直集成的裸片和/或晶片接合，PGS可以形成在第二（顶部）的表面（例如，背面）上 或者可以形成在第一半导体器件上，例如在形成于第一半导体器件上的电介质层上，PGS可以由各种图案的平行条纹组成，或者可以是螺旋状，格子状或 类似。

    RADIO FREQUENCY CIRCUIT WITH INTEGRATED ON-CHIP RADIO FREQUENCY INDUCTIVE SIGNAL COUPLER
    120.
    发明申请
    RADIO FREQUENCY CIRCUIT WITH INTEGRATED ON-CHIP RADIO FREQUENCY INDUCTIVE SIGNAL COUPLER 有权
    带集成片上无线电频率感应信号耦合器的无线电频率电路

    公开(公告)号：US20080207159A1

    公开(公告)日：2008-08-28

    申请号：US11679573

    申请日：2007-02-27

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: H01L21/338

    CPC classification number: H01P5/02 ,  H01P5/185

    Abstract: A radio frequency (RF) circuit (100) as disclosed herein is fabricated on a substrate (204, 304) using integrated passive device (IPD) process technology. The RF circuit (100) includes an RF inductor (200, 300) and an integrated inductive RF coupler (202, 302) located proximate to the RF inductor (200, 300). The inductive RF coupler (202, 302), its output and grounding contact pads, and its transmission lines are fabricated on the same substrate (204, 304) using the same IPD process technology. The inductive RF coupler (202, 302) includes a coupling section (212, 306) that is either located inside or outside a spiral of the RF inductor (200, 300). The inductive RF coupler (202, 302) and the RF inductor (200, 300) are cooperatively configured to function as the windings of an RF transformer, thus achieving the desired coupling. The inductive RF coupler (202, 302) provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit (100).

    Abstract translation: 本文公开的射频（RF）电路（100）使用集成无源器件（IPD）工艺技术制造在衬底（204,304）上。 RF电路（100）包括位于RF电感器（200,300）附近的RF电感器（200,300）和集成的感应RF耦合器（202,302）。 感应RF耦合器（202,302），其输出和接地接触焊盘及其传输线使用相同的IPD工艺技术在同一衬底（204,304）上制造。 感应RF耦合器（202,302）包括耦合部分（212,306），其位于RF电感器（200,300）的螺旋内部或外部。 感应RF耦合器（202,302）和RF电感器（200,300）被协作地配置成用作RF变压器的绕组，从而实现期望的耦合。 感应RF耦合器（202,302）提供有效且可再生的RF耦合，而不增加RF电路（100）的管芯封装。

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