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    CMOS-compatible MEM switches and method of making
    111.
    发明授权
    CMOS-compatible MEM switches and method of making 失效
    CMOS兼容MEM开关及制作方法

    公开(公告)号：US06396368B1

    公开(公告)日：2002-05-28

    申请号：US09438085

    申请日：1999-11-10

    Applicant: Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    Inventor： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC: H01P110

    CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    Abstract: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    Abstract translation: 通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。 可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。 处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。 这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。 围绕触点的介质被回蚀，使得它们彼此突出。 因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。 钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。 互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。 可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

    Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same
    112.
    发明授权
    Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same 失效
    微电子机械系统致动器装置和利用其的可重构电路

    公开(公告)号：US6127908A

    公开(公告)日：2000-10-03

    申请号：US972224

    申请日：1997-11-17

    Applicant: Carl O. Bozler ,  Richard G. Drangmeister ,  Robert J. Parr ,  Lawrence J. Kushner

    Inventor： Carl O. Bozler ,  Richard G. Drangmeister ,  Robert J. Parr ,  Lawrence J. Kushner

    IPC: B81B3/00 ,  B81C99/00 ,  H01H59/00 ,  H01P1/12 ,  H01P1/203 ,  H01P5/04 ,  H01P1/10 ,  H01C10/06 ,  H01G5/011 ,  H03F1/00

    CPC classification number: B81B3/0021 ,  B81C1/00214 ,  H01G5/18 ,  H01G5/40 ,  H01P1/12 ,  H01P1/20327 ,  H01P1/20363 ,  H01P1/20381 ,  H01P1/2039 ,  H01P5/04 ,  B81B2201/014 ,  B81B2203/0118 ,  H01H2059/0081 ,  H01H59/0009

    Abstract: A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves. In one embodiment of the invention, the fixed and moveable electrodes are configured within an array of similar devices, and each device or groups of devices in the array are individually addressable to actuate the moveable electrodes. In another embodiment of the invention, there is provided a reconfigurable circuit including an array of actuatable devices which are addressed individually or in selected groups, each of the actuatable devices having a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode.

    Abstract translation: 一种微电子机械装置，其包括形成在基板上的固定电极，所述固定电极包括透明的高电阻层和在预定方向上形成有各向异性应力并且邻近所述固定电极设置的可移动电极。 该器件包括通过固定电极彼此隔离的第一和第二导电区域。 可移动电极移动以覆盖固定电极并且电耦合到第二导电区域，从而响应于施加在固定和可移动电极上的电势而电耦合第一和第二导电区域。 固定电极对电磁信号或波是透明的，并且可移动电极阻止或允许电磁信号或波的传输。 在本发明的一个实施例中，固定和可移动电极被配置在类似器件的阵列内，并且阵列中的每个器件或器件组可单独寻址以致动可移动电极。 在本发明的另一个实施例中，提供了一种可重构电路，其包括单独寻址或选定组中的致动装置阵列，每个可致动装置具有形成在基板上的固定电极，固定电极包括透明高 电阻层和在预定方向上形成有各向异性应力的可动电极，并且邻近固定电极设置。

    Encapsulated MEMS Switching Element, Device and Production Method
    114.
    发明公开
    Encapsulated MEMS Switching Element, Device and Production Method 审中-公开

    公开(公告)号：US20240150166A1

    公开(公告)日：2024-05-09

    申请号：US18548551

    申请日：2022-02-21

    Applicant: Siemens Aktiengesellschaft

    Inventor： Oliver Raab ,  Markus Schwarz ,  Jörg Zapf ,  Hans Santos Wilke

    IPC: B81B7/00 ,  B81C1/00 ,  H01H1/00

    CPC classification number: B81B7/0041 ,  B81C1/00269 ,  H01H1/0036 ,  B81B2201/014 ,  H01H2001/0084

    Abstract: Various embodiments include a microelectromechanical switching element. The element may include: a substrate with a carrier layer, an electrically insulating layer, and a semiconductor layer; a deflectable bending element formed by a freed subregion of the semiconductor layer; and a cover substrate connected to the carrier substrate. The carrier layer defines a first cutout in the region of the bending element. The cover substrate comprises a second cutout and/or an encircling spacer layer in the region of the bending element. The first cutout and the second cutout define a superordinate hollow space in which the bending element is arranged so as to be deflectable. The superordinate hollow space is delimited by the carrier layer and by the cover substrate to provide a hermetically encapsulation from the external environment.

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