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    PHASE MODULATOR DEVICE AND METHOD
    112.
    发明公开
    PHASE MODULATOR DEVICE AND METHOD 审中-公开

    公开(公告)号：US20230236446A1

    公开(公告)日：2023-07-27

    申请号：US18295121

    申请日：2023-04-03

    Applicant: ST Microelectronics (Crolles 2) SAS

    Inventor： Sébastien Cremer ,  Frédéric Boeuf ,  Stephane Monfray

    IPC: G02F1/035 ,  G02B6/12 ,  G02F1/01

    CPC classification number: G02F1/035 ,  G02B6/12004 ,  G02F1/0147 ,  G02F2201/063

    Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

    OPTICAL STRUCTURE AND METHOD OF FABRICATING AN OPTICAL STRUCTUR
    113.
    发明申请
    OPTICAL STRUCTURE AND METHOD OF FABRICATING AN OPTICAL STRUCTUR 审中-公开

    公开(公告)号：US20190250434A1

    公开(公告)日：2019-08-15

    申请号：US16324748

    申请日：2017-08-09

    Applicant: University of Southampton

    Inventor： Kapil DEBNATH ,  Graham REED ,  Shinichi SAITO

    IPC: G02F1/025

    CPC classification number: G02F1/025 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2202/105

    Abstract: A method of fabricating an optical structure comprises providing a layer of single crystal crystalline silicon supported on an insulating surface of a silicon substrate; using etching to remove part of the silicon layer and define a side wall which is non-parallel to the insulating surface of the substrate; forming a layer of insulating material over the side wall; forming a further layer of silicon over at least the insulating material; and removing the silicon of the further layer to a level of the layer of silicon such that the layer of insulating material occupies a slot between a portion of silicon in the layer and a portion of silicon in the further layer, a thickness of the layer of insulating material defining a width of the slot.

    SEMICONDUCTOR DEVICE
    114.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190196231A1

    公开(公告)日：2019-06-27

    申请号：US16182259

    申请日：2018-11-06

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Tohru KAWAI ,  Shinichi WATANUKI ,  Yasutaka NAKASHIBA

    IPC: G02F1/025

    CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2203/50

    Abstract: The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.

    Wavelength selective switch and wavelength selection method
    118.
    发明授权
    Wavelength selective switch and wavelength selection method 有权

    公开(公告)号：US09829767B2

    公开(公告)日：2017-11-28

    申请号：US15408745

    申请日：2017-01-18

    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.

    Inventor： Xiao Ma ,  Xuecang Zhang ,  Jianyi Yang

    IPC: G02F1/295 ,  G02F1/313 ,  G02B6/293 ,  G02F1/01

    CPC classification number: G02F1/3133 ,  G02B6/29343 ,  G02B6/29382 ,  G02B6/29395 ,  G02B6/35 ,  G02F1/0147 ,  G02F2201/063 ,  G02F2203/15

    Abstract: A wavelength selective switch and a wavelength selection method are provided, where the wavelength selective switch includes: a dual-microring resonator, including a first microring and a second microring that are connected in series, where the first microring and the second microring respectively include one annular PN junction, and a direction of the annular PN junction of the first microring is the same as that of the annular PN junction of the second microring; an electric tuning module, where a first electric port of the electric tuning module is connected to a P zone of the first microring and an N zone of the second microring, a second electric port of the electric tuning module is connected to an N zone of the first microring and a P zone of the second microring; and a thermal tuning module, configured to adjust an operating temperature of the dual-microring resonator.

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