公开(公告)号：US20160204047A1

公开(公告)日：2016-07-14

申请号：US14913719

申请日：2015-01-09

Applicant: DENSO CORPORATION

Inventor： Shun SUGIURA ,  Yasushi OOKURA

IPC: H01L23/367 ,  B23K1/00 ,  H01L23/00

CPC classification number: H01L23/3675 ,  B23K1/0016 ,  B23K1/008 ,  B23K3/087 ,  B23K2101/40 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/05554 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/83986 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/38 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/014

Abstract: A semiconductor device includes: a semiconductor element having a solder region and a non-solder region on a first face; a first metal member disposed on the first face of the semiconductor element; a second metal member disposed on a rear face of the semiconductor element; a first solder that connects the solder region of the semiconductor element and the first metal member; and a second solder that connects the rear face of the semiconductor element and the second metal member. At least the second solder provides a melt-bond. A gravity center position of the first metal member coincides with a center position of the semiconductor element in a projection view from a stacking direction.

Abstract translation: 半导体器件包括：在第一面上具有焊料区域和非焊接区域的半导体元件; 设置在所述半导体元件的第一面上的第一金属构件; 设置在所述半导体元件的背面上的第二金属构件; 连接半导体元件的焊料区域和第一金属部件的第一焊料; 以及连接半导体元件的后表面和第二金属构件的第二焊料。 至少第二焊料提供熔融粘合。 第一金属构件的重心位置与半导体元件的从堆叠方向的投影视图的中心位置重合。

公开(公告)号：US20160043016A1

公开(公告)日：2016-02-11

申请号：US14921067

申请日：2015-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isabel DE SOUSA ,  Annique LAVOIE ,  Eric SALVAS ,  Michel TURGEON

IPC: H01L23/367 ,  H01L23/00

CPC classification number: H01L23/3675 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/324 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/4882 ,  H01L21/50 ,  H01L21/52 ,  H01L21/563 ,  H01L21/565 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L23/04 ,  H01L23/367 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/50 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83048 ,  H01L2224/83191 ,  H01L2224/832 ,  H01L2224/83201 ,  H01L2224/838 ,  H01L2224/83855 ,  H01L2224/83908 ,  H01L2224/83986 ,  H01L2924/06 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/20102 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

公开(公告)号：US20160042977A1

公开(公告)日：2016-02-11

申请号：US14921072

申请日：2015-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isabel DE SOUSA ,  Annique LAVOIE ,  Eric SALVAS ,  Michel TURGEON

IPC: H01L21/48 ,  H01L23/00 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/321 ,  H01L21/52

CPC classification number: H01L23/3675 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/324 ,  H01L21/481 ,  H01L21/4817 ,  H01L21/4882 ,  H01L21/50 ,  H01L21/52 ,  H01L21/563 ,  H01L21/565 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L23/04 ,  H01L23/367 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/50 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83048 ,  H01L2224/83191 ,  H01L2224/832 ,  H01L2224/83201 ,  H01L2224/838 ,  H01L2224/83855 ,  H01L2224/83908 ,  H01L2224/83986 ,  H01L2924/06 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/20102 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

公开(公告)号：US20160009947A1

公开(公告)日：2016-01-14

申请号：US14859526

申请日：2015-09-21

Applicant: MITSUBISHI CHEMICAL CORPORATION

Inventor： Masaya SUGIYAMA ,  Yasuhiro Kawase ,  Makoto Ikemoto ,  Hideki Kiritani ,  Masanori Yamazaki

IPC: C09D163/00 ,  C08K5/18 ,  H01L23/00 ,  C08K3/28 ,  C08K3/22 ,  C08K5/42 ,  C08K3/36

CPC classification number: C09D163/00 ,  C08G59/5033 ,  C08K3/22 ,  C08K3/28 ,  C08K3/36 ,  C08K3/38 ,  C08K5/18 ,  C08K5/42 ,  C08K2003/222 ,  C08K2003/2227 ,  C08K2003/282 ,  C08K2003/385 ,  C08L63/00 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/83201 ,  H01L2224/83948 ,  H01L2924/3512

Abstract: To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment.A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Abstract translation: 为了提供满足高的K1c值，高玻璃化转变温度和低粘度的组合物，并且能够形成层状半导体器件的层间填充层，即使不考虑环境变化，也能够保持稳定的接合。 包含在25℃下的粘度为50Pa·s以下的环氧化合物（A），熔点或软化点为80℃以上的胺化合物（B）和胺化合物 （C）的熔点或软化点小于80℃，其中胺化合物（C）的比例为至少1重量份且小于40重量份，相对于总重量的100重量份 胺化合物（B）和胺化合物（C）的量。

公开(公告)号：US09184125B2

公开(公告)日：2015-11-10

申请号：US14064807

申请日：2013-10-28

Applicant: Ziptronix, Inc.

Inventor： Paul M. Enquist ,  Gaius Gillman Fountain

IPC: H01L23/498 ,  H01L21/20 ,  H01L25/00 ,  H01L21/768

CPC classification number: H01L25/0657 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/49866 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/83053 ,  H01L2224/83201 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

Abstract translation: 一种将具有第一表面的第一衬底与第一绝缘材料和第一接触结构与具有第二表面的第二衬底与第二绝缘材料和第二接触结构集成的方法。 第一绝缘材料直接接合到第二绝缘材料上。 去除第一衬底的一部分以留下剩余部分。 具有与第一基板的CTE基本相同的热膨胀系数（CTE）的第三基板被结合到剩余部分。 粘合的基底被加热以促进第一和第二接触结构之间的电接触。 在加热之后移除第三衬底以提供具有可靠电接触的接合结构。

公开(公告)号：US20150311185A1

公开(公告)日：2015-10-29

申请号：US14264584

申请日：2014-04-29

Applicant: Micron Technology, Inc.

Inventor： Hong Wan Ng ,  Seng Kim Ye

IPC: H01L25/18 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L23/3128 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/1205 ,  H01L2924/143 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15174 ,  H01L2924/15182 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.

Abstract translation: 本文公开了具有支撑构件和相关系统和方法的堆叠的半导体管芯组件。 在一个实施例中，半导体管芯组件可以包括封装衬底，附接到封装衬底的第一半导体管芯，以及也附接到封装衬底的多个支撑构件。 多个支撑构件可以包括第一支撑构件和设置在第一半导体管芯的相对侧的第二支撑构件，并且第二半导体管芯可以联接到支撑构件，使得第二半导体管芯的至少一部分 在第一个半导体芯片上。

公开(公告)号：US09166130B2

公开(公告)日：2015-10-20

申请号：US13659019

申请日：2012-10-24

Applicant: Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

Inventor： Alfred Feitisch ,  Gabi Neubauer ,  Mathias Schrempel

IPC: H01S5/022 ,  H01L33/62 ,  B23K20/02 ,  H01S5/042 ,  B23K20/24 ,  H01S5/024

CPC classification number: H01L24/83 ,  B23K20/023 ,  B23K20/24 ,  B23K2101/42 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2924/12042 ,  H01S5/02212 ,  H01S5/02256 ,  H01S5/0226 ,  H01S5/02264 ,  H01S5/02476 ,  H01S5/0425

Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

Abstract translation: 可以将半导体激光器芯片的第一接触表面形成为第一目标表面粗糙度，并且可以将载体安装的第二接触表面形成为第二目标表面粗糙度。 包含第一金属的第一粘合制备层可以任选地施加到所形成的第一接触表面，并且包括第二金属的第二接合制备层可任选地施加到形成的第二接触表面。 第一接触表面可以与第二接触表面接触，并且无焊接固定工艺可以将半导体激光器芯片固定到载体安装。 还描述了相关系统，方法，制品等。

公开(公告)号：US20150294928A1

公开(公告)日：2015-10-15

申请号：US14669169

申请日：2015-03-26

Applicant: ROHM CO., LTD.

Inventor： Kenji FUJII ,  Yasumasa KASUYA ,  Mamoru YAMAGAMI ,  Naoki KINOSHITA ,  Motoharu HAGA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/367 ,  H01L23/31 ,  H01L23/29

CPC classification number: H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

Abstract: A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

Abstract translation: 半导体器件具有设置有功能表面的半导体元件，功能电路形成在其上，并且背面面向与功能表面相反的方向，同时还具有支撑半导体元件并与半导体元件电连接的引线 以及覆盖半导体元件和引线的至少一部分的树脂封装。 半导体元件具有形成在功能面上的功能面侧电极，其具有在功能面朝向的方向突出的功能面侧凸起部。 功能面侧电极的功能面侧隆起部通过固态接合而与引线接合。

公开(公告)号：US09132513B2

公开(公告)日：2015-09-15

申请号：US13931759

申请日：2013-06-28

Applicant: HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Chih-Chen Lai

IPC: H01L21/00 ,  B23K31/12 ,  H01L31/02 ,  H01L23/00

CPC classification number: B23K31/12 ,  H01L24/75 ,  H01L24/83 ,  H01L31/02 ,  H01L31/022408 ,  H01L2224/29099 ,  H01L2224/32238 ,  H01L2224/753 ,  H01L2224/75745 ,  H01L2224/7592 ,  H01L2224/83201 ,  H01L2224/838 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A device includes a vacuum nozzle, a driver, a measuring unit, and a controller. The nozzle lifts and holds a photoelectric element having a first electrode and a second electrode. The driver drives the nozzle to press the photoelectric element onto a substrate having a soldering pad and a contact, such that the second electrode is electrically connected to the soldering pad via a layer of conductive glue. The measuring unit measures a resistance across the first electrode and the contact of the substrate when the photoelectric element is pressed onto the substrate. The controller controls the driver to drive the nozzle to keep pressing the photoelectric element harder and harder into the substrate until the resistance stops decreasing, that is, when the layer of conductive glue is at its thinnest.

Abstract translation: 装置包括真空喷嘴，驱动器，测量单元和控制器。 喷嘴提升并保持具有第一电极和第二电极的光电元件。 驱动器驱动喷嘴将光电元件按压到具有焊盘和触点的基板上，使得第二电极经由一层导电胶电连接到焊盘。 当光电元件被压在基板上时，测量单元测量跨越第一电极的电阻和基板的接触。 控制器控制驱动器驱动喷嘴，使光电元件更坚硬地压入基板，直到电阻停止下降，即当导电胶层处于最薄时。

公开(公告)号：US20150187704A1

公开(公告)日：2015-07-02

申请号：US14445653

申请日：2014-07-29

Applicant: Hyundai Motor Company

Inventor： Ilseon Yoo ,  Hiwon Lee ,  Soon-myung Kwon ,  Hyunsoo Kim

IPC: H01L23/544 ,  H01L21/311 ,  H01L21/027 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L21/0272 ,  H01L21/31133 ,  H01L21/31144 ,  H01L24/83 ,  H01L2223/54426 ,  H01L2224/83139 ,  H01L2224/83201 ,  H01L2224/83902

Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Abstract translation: 一种连接半导体衬底的方法，其可以包括：在第一半导体衬底上形成对准键; 在所述第一半导体衬底和所述对准键上形成绝缘层; 在所述绝缘层上形成第一金属层图案和第二金属层图案; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第三金属层图案和第四金属层图案; 并且提供在第一半导体衬底和第二半导体衬底接合时将对准键定位在对准凹槽处的第一半导体衬底和第二半导体衬底。