Abstract:
It is an object of the present invention to provide a coating apparatus and a coating method that can effectively prevent thick coating and the like in a bar coater having a coating bar and a fulcrum supporting the coating bar from the below. The coating apparatus comprising a coating liquid-adhering device for adhering the coating liquid across an entire width of one surface of a continuously travelling belt-shaped body; a coating thickness-adjusting device located downstream from the coating liquid-adhering device with respect to the travelling direction of the belt-shaped body, and adjusting a thickness of a layer of the coating liquid adhered to the belt-shaped body by the coating liquid-adhering device into a predetermined thickness; and a drying-preventative device for preventing the coating liquid at the coating thickness-adjusting device from drying.
Abstract:
A water soluble or water dispersible fluorochemical silane represented by the general formula: X-MfnMhmMar-Gnullnull(I) wherein X represents the residue of an initiator or hydrogen; Mf represents units derived from one or more fluorinated monomer; Mh represents units derived from one or more non-fluorinated monomer; Ma represents units having a silyl group represented by the formula: 1 wherein each of Y4, Y5 and Y6 independently represents an alkyl group, an aryl group or a hydrolyzable group; G is a monovalent organic group comprising the residue of a chain transfer agent; n represents a value of 1 to 100; m represents a value of 0 to 100; and r represents a value of 0 to 100; and nnullmnullr is at least 2; with the proviso that at least one of the following conditions is fulfilled: (a) G contains a silyl group of the formula: 2 wherein Y1, Y2 and Y3 each independently represents an alkyl group, an aryl group or a hydrolyzable group and at least one of Y1, Y2 and Y3 represents a hydrolyzable water solubilising group; or (b) r is at least 1 and at least one of Y4, Y5 and Y6 represents a hydrolyzable water solubilizing group.
Abstract translation:由通式X-MfnMhmMar-G(I)表示的水溶性或水分散性含氟硅烷,其中X表示引发剂或氢的残基; Mf表示衍生自一种或多种氟化单体的单元; Mh表示衍生自一种或多种非氟化单体的单元; Ma表示具有由下式表示的甲硅烷基的单元:其中Y4,Y5和Y6各自独立地表示烷基,芳基或可水解基团; G是包含链转移剂残基的一价有机基团; n表示1〜100的数值。 m表示0〜100的值。 r表示0〜100的值。 n + m + r为2以上; 条件是满足以下条件中的至少一个:(a)G包含下式的甲硅烷基:其中Y 1,Y 2和Y 3各自独立地表示烷基,芳基或可水解基团,并且至少一个 Y1,Y2和Y3表示可水解水增溶基团; 或(b)r为至少1,Y4,Y5和Y6中的至少一个表示可水解的水增溶基团。
Abstract:
This invention pertains to a process for plating metal onto textile products, and the metal plated textile products made by this process. The process can employ an apparatus that is conventionally used for dyeing fabric.
Abstract:
In the silver mirror pre-treating step, a tinnullIInull chloride solution with tinnullIInull actually serving as a co-catalyst is used for supporting tinnullIInull on the surface of the basecoat layer in the co-catalyst-supporting step. In the next washing step, the surface of the basecoat layer is washed with water. In the still next catalyst-supporting step, a palladium chloride solution with palladiumnullIInull actually serving as a catalyst is used for supporting palladiumnullIInull on the surface of the basecoat layer. After that, the resulting laminate is washed in the next washing step and then plated through silver mirror reaction in the still next plate layer-forming step.
Abstract:
A method for treating a metal enclosure to prevent the enclosure from being contaminated, comprises the steps of: (a) sand-blasting the enclosure; (b) preheating the enclosure to a predetermined temperature, and putting the enclosure into the space in a vacuum chamber between two electrodes; (c) introducing reactive gases into the vacuum chamber, the reactive gases including 1,1,3,3-tetramethyldisiloxane and oxygen; (d) applying high electrical power to the electrodes to cause the reactive gases to become an ionized plasma, the plasma reacting with a surface of the enclosure to form a layer of silicon oxide thereon. The layer of silicon oxide resists formation of a fingerprint when it is touched by a user.
Abstract:
A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
Abstract:
A method of making a porous biodegradable polymer is disclosed, which comprises (a) placing a biodegradable polymer and a solvent in a chamber; (b) adding a supercritical fluid to the chamber and maintaining the chamber at a predetermined temperature for a sufficient period of time to allow the supercritical fluid to dissolve into the biodegradable polymer with the help of the solvent; and (c) venting the supercritical fluid and the solvent by reducing the pressure in the chamber, thereby obtaining a porous biodegradable polymer.
Abstract:
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
Abstract:
A plastic surface to be metallized is contacted with a preactivation solution after an etching step and before an activation step. The solution comprises permanganate, a crosslinking agent, and a pH buffer material. As a result of the preactivation treatment with the solution, the plastic surface is changed in such a manner that the activation step can be carried out more efficiently. The method enables plastics to be metallized more efficiently and at lower cost, or in some cases to be metallized at all.
Abstract:
A method for depositing an adhesion-promoting layer on a spatially bounded metallic layer of a silicon chip is provided. The adhesion-promoting layer is deposited, using at least one wet-chemical process. During the wet-chemical process, the concentration of an inhibitor of a multi-component process bath is checked in at least approximately continuous manner and adjusted to a constant value. The adjustment of the inhibitor concentration is independent of the adjustment of the concentrations of other process-bath components.