公开(公告)号：US10403556B2

公开(公告)日：2019-09-03

申请号：US15381155

申请日：2016-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Peter Irsigler ,  Joachim Mahler ,  Guenther Ruhl ,  Hans-Joachim Schulze ,  Markus Zundel

IPC: B82Y30/00 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L23/367 ,  H01L23/373 ,  H01L23/427 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739

Abstract: A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

公开(公告)号：US10340227B2

公开(公告)日：2019-07-02

申请号：US15071375

申请日：2016-03-16

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Manfred Schneegans

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  C22C19/03

Abstract: In various embodiments, a die is provided. The die may include a die body, and at least one of a front side metallization structure on a front side of the die body and a back side metallization structure on a back side of the die body such that the die is plane or includes a positive radius of curvature at a die attach process temperature range.

公开(公告)号：US10276706B2

公开(公告)日：2019-04-30

申请号：US15132709

申请日：2016-04-19

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Dietrich Bonart ,  Ludger Borucki

IPC: H01L29/78 ,  H02J7/00 ,  H01L29/36 ,  H01L29/739 ,  H01L29/08 ,  H01L23/051 ,  H01L29/06 ,  H01L29/10 ,  H02J7/24 ,  H01L29/861 ,  H01L23/24 ,  H02J7/14

Abstract: A gated diode in a press-fit housing includes a base configured to be press-fit into an opening of a diode carrier plate and including a pedestal portion with a first flat surface, and a head wire including a head portion with a second flat surface and a wire portion. The base and the head wire form parts of the press-fit housing. The gated diode in the press-fit housing further includes a semiconductor die, a first solder layer engaging and electrically connecting the semiconductor die with the first flat surface of the base, and a second solder layer engaging and electrically connecting the semiconductor die with the second flat surface of the head wire.

公开(公告)号：US20190051749A1

公开(公告)日：2019-02-14

申请号：US16100496

申请日：2018-08-10

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Peter Brandl ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/40

Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.

公开(公告)号：US20180145045A1

公开(公告)日：2018-05-24

申请号：US15817810

申请日：2017-11-20

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Rainer Pelzer ,  Manfred Schneegans

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/4502 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/10157 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/45099

Abstract: A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. The load terminal includes a metallization having a frontside and a backside. The backside interfaces with a surface of the semiconductor body. The frontside is configured to interface with a wire structure having at least one wire configured to conduct at least a part of the load current. The frontside has a lateral structure formed at least by at least one local elevation of the metallization. The local elevation has a height in an extension direction defined by a distance between the base and top of the local elevation and, in a first lateral direction perpendicular to the extension direction, a base width at the base and a top width at the top.

公开(公告)号：US20180114788A1

公开(公告)日：2018-04-26

申请号：US15792492

申请日：2017-10-24

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/0292 ,  H01L27/0255 ,  H01L27/0288 ,  H01L27/0296 ,  H01L28/20 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/78618 ,  H01L29/8083

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

公开(公告)号：US09812563B2

公开(公告)日：2017-11-07

申请号：US15182244

申请日：2016-06-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Markus Zundel ,  Karl-Heinz Bach ,  Franz Hirler ,  Christian Kampen ,  Werner Schustereder

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/7813 ,  H01L21/265 ,  H01L21/2652 ,  H01L21/324 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66734

Abstract: A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.

公开(公告)号：US09698228B2

公开(公告)日：2017-07-04

申请号：US14976604

申请日：2015-12-21

Applicant: Infineon Technologies AG

Inventor： Christian Kampen ,  Markus Zundel

IPC: H01L29/41 ,  H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/407 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/66666 ,  H01L29/7397 ,  H01L29/7813

Abstract: Disclosed is a transistor device. The transistor device includes a plurality of field structures which define a plurality of semiconductor mesa regions in a semiconductor body, and each of which comprises a field electrode and a field electrode dielectric; a plurality of gate structures in each semiconductor mesa region, wherein each gate structure comprises a gate electrode and a gate dielectric, and is arranged in a trench of the semiconductor mesa region; a plurality of body regions, a plurality of source regions, and a drift region. Each body region adjoins the gate dielectric of at least one of the plurality of gate structures, and is located between one of the plurality of source regions and the drift region.

公开(公告)号：US20170186663A1

公开(公告)日：2017-06-29

申请号：US15381155

申请日：2016-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Peter Irsigler ,  Joachim Mahler ,  Guenther Ruhl ,  Hans-Joachim Schulze ,  Markus Zundel

IPC: H01L23/367 ,  H01L29/40 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L23/3672 ,  B82Y30/00 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3737 ,  H01L23/4275 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/417 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7813 ,  Y10S977/742 ,  Y10S977/753

Abstract: A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

公开(公告)号：US09570433B2

公开(公告)日：2017-02-14

申请号：US14859928

申请日：2015-09-21

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Vanessa Capodieci ,  Markus Dinkel ,  Uwe Schmalzbauer

IPC: H01L27/02 ,  H01L23/48 ,  H01L23/58 ,  H01L21/66 ,  H01L29/40 ,  H01L29/78 ,  H01L23/00 ,  G01R31/26 ,  H01L27/088 ,  H01L29/06 ,  H01L23/13

CPC classification number: H01L27/0207 ,  G01R31/26 ,  H01L22/34 ,  H01L23/13 ,  H01L23/48 ,  H01L23/562 ,  H01L23/58 ,  H01L23/585 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.

Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。