公开(公告)号：US20170271155A1

公开(公告)日：2017-09-21

申请号：US15071243

申请日：2016-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/40 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0337 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/31144

Abstract: A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed to the photoresist layer. A post-exposure bake (PEB) process is performed to the photoresist layer. The photoresist layer is rinsed to develop a photoresist pattern. A primer material is applied to the photoresist pattern. The primer material is configured to: straighten a profile of the photoresist pattern, or to increase a number of deprotected acid labile group (ALG) units of the photoresist material, or to bond with the deprotected ALG units of the photoresist material. After the primer material is applied, the photoresist pattern is enlarged by coating a shrink material over the photoresist pattern, baking the shrink material, and removing portions of the shrink material. The patternable layer is patterned using the enlarged photoresist pattern as a mask.

公开(公告)号：US20170269478A1

公开(公告)日：2017-09-21

申请号：US15072635

申请日：2016-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Yen Lin ,  Ching-Yu Chang

IPC: G03F7/075 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0755 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/38 ,  H01L21/0274

Abstract: A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

公开(公告)号：US20170227852A1

公开(公告)日：2017-08-10

申请号：US15019836

申请日：2016-02-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/32 ,  G03F7/38 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/38

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.

公开(公告)号：US20170227851A1

公开(公告)日：2017-08-10

申请号：US15040173

申请日：2016-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Chien-Wei Wang

IPC: G03F7/20 ,  G03F7/32 ,  G03F7/075 ,  G03F7/039

CPC classification number: G03F7/2004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/075 ,  G03F7/095 ,  G03F7/32

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The photoresist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a first sensitizer that is bonded to the polymer backbone, a second sensitizer that is not bonded to the polymer backbone, and a photo-acid generator (PAG).

公开(公告)号：US20170219925A1

公开(公告)日：2017-08-03

申请号：US15010443

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang

IPC: G03F7/40 ,  G03F7/00 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/30 ,  G03F7/405

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.

公开(公告)号：US20170213722A1

公开(公告)日：2017-07-27

申请号：US15007825

申请日：2016-01-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Chen-Yu Liu.. ,  Ching-Yu Chang

IPC: H01L21/027

CPC classification number: H01L21/0273 ,  G03F7/039 ,  G03F7/091 ,  G03F7/11 ,  G03F7/30 ,  G03F7/322 ,  H01L21/0332

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes providing a substrate, forming a crosslinked layer over the substrate, wherein the crosslinked layer is in contact with the substrate, forming a patterned layer over the crosslinked layer, forming a pattern in the crosslinked layer and further in the substrate by using the patterned layer as a mask, treating the crosslinked layer by using a radiation source to transition the crosslinked layer to a de-crosslinked layer with a reduced molecular weight, and removing the de-crosslinked layer by using a solution that is not subject to cause damage on the substrate.

公开(公告)号：US12272554B2

公开(公告)日：2025-04-08

申请号：US18227231

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin Wei ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

IPC: H01L21/033 ,  G03F1/22 ,  G03F7/00 ,  H01L21/308

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US12074027B2

公开(公告)日：2024-08-27

申请号：US17481680

申请日：2021-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/027 ,  H01L21/3213 ,  G03F7/09 ,  G03F7/11

CPC classification number: H01L21/0276 ,  H01L21/32139 ,  G03F7/091 ,  G03F7/11

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.

公开(公告)号：US11854798B2

公开(公告)日：2023-12-26

申请号：US17874614

申请日：2022-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jei Ming Chen ,  Tze-Liang Lee

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/02274 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/76802

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

公开(公告)号：US11854769B2

公开(公告)日：2023-12-26

申请号：US17833404

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Shun Hsu ,  Ching-Yu Chang ,  Chiao-Kai Chang ,  Wai Hong Cheah ,  Chien-Fang Lin

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/3244 ,  H01J37/3211 ,  H01J37/32715 ,  H01J37/32963 ,  H01L21/67069 ,  H01L22/26 ,  H01J2237/20214 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67167 ,  H01L21/6831

Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.