公开(公告)号：US20110058243A1

公开(公告)日：2011-03-10

申请号：US12946583

申请日：2010-11-15

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G02B26/02 ,  H01L21/302

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US07754617B2

公开(公告)日：2010-07-13

申请号：US12098052

申请日：2008-04-04

Applicant: Thomas Kieran Nunan

Inventor： Thomas Kieran Nunan

IPC: H01L21/302

CPC classification number: B81C1/00666 ,  B81B2201/025 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.

Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。

公开(公告)号：US20090042372A1

公开(公告)日：2009-02-12

申请号：US12098052

申请日：2008-04-04

Applicant: Thomas Kieran Nunan

Inventor： Thomas Kieran Nunan

IPC: H01L21/20

CPC classification number: B81C1/00666 ,  B81B2201/025 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.

Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。

公开(公告)号：US20070160748A1

公开(公告)日：2007-07-12

申请号：US11323896

申请日：2005-12-30

Applicant: Michael Schugt ,  Kamal Mothilal ,  David Ruben ,  Lary Larson ,  Michael Mattes

Inventor： Michael Schugt ,  Kamal Mothilal ,  David Ruben ,  Lary Larson ,  Michael Mattes

IPC: B05D5/12 ,  A61N1/00 ,  A61B5/04

CPC classification number: A61N1/056 ,  A61B5/0215 ,  B81B3/0072 ,  B81C2201/0167 ,  H01L21/4857 ,  H05K1/0271 ,  H05K3/4061 ,  H05K3/4092

Abstract: Media-exposed interconnects for transducer modules are disclosed. The transducers may be sensing transducers, actuating transducers, IC-only transducers, or combinations thereof, or other suitable transducers. The transducers may be used in connection with implantable medical devices and may be exposed to various media, such as body fluids. The media-exposed interconnects for transducer modules may allow transducers to communicate electrically with other components, such as implantable medical devices.

Abstract translation: 公开了用于传感器模块的介质曝光互连。 换能器可以是感测换能器，致动换能器，仅IC元件的换能器，或其组合，或其他合适的换能器。 换能器可以与可植入医疗装置结合使用，并且可以暴露于各种介质，例如体液。 用于换能器模块的介质暴露互连可以允许换能器与诸如可植入医疗装置的其它部件电气通信。

公开(公告)号：US20070042524A1

公开(公告)日：2007-02-22

申请号：US11506600

申请日：2006-08-18

Applicant: Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

Inventor： Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

IPC: H01L21/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract translation: MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：US07160752B2

公开(公告)日：2007-01-09

申请号：US11242960

申请日：2005-10-05

Applicant: Luc Ouellet ,  Robert Antaki

Inventor： Luc Ouellet ,  Robert Antaki

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。

公开(公告)号：US07144750B2

公开(公告)日：2006-12-05

申请号：US10459619

申请日：2003-06-12

Applicant: Luc Ouellet ,  Robert Antaki

Inventor： Luc Ouellet ,  Robert Antaki

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

公开(公告)号：US20060182404A1

公开(公告)日：2006-08-17

申请号：US11400301

申请日：2006-04-07

Applicant: Michael Goldstein

Inventor： Michael Goldstein

IPC: G02B6/10

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

公开(公告)号：US20040164368A1

公开(公告)日：2004-08-26

申请号：US10782297

申请日：2004-02-18

Inventor： Michael Goldstein

IPC: H01L029/82 ,  H01L023/58

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

Abstract translation: 具有高反射器可调应力涂层的光学装置包括微机电系统（MEMS）平台，设置在MEMS平台上的反射镜和设置在反射镜上的多层涂层。 多层涂层包括银（Ag）层，沉积在Ag层上的二氧化硅（SiO 2）层，沉积在SiO 2层上的本征硅（Si）层和氮氧化硅层 SiO x N y）沉积在Si层上。 氮的浓度增加和/或降低以调节应力（例如，拉伸，无，压缩）。

公开(公告)号：US06768181B2

公开(公告)日：2004-07-27

申请号：US10461036

申请日：2003-06-13

Applicant: Paul W Dwyer

Inventor： Paul W Dwyer

IPC: H01L2984

CPC classification number: B81C99/0035 ,  B81C1/00666 ,  B81C99/0065 ,  B81C2201/0167

Abstract: Micro-machined electromechanical sensor (MEMS) devices having feature orientation delicately adjusted after initial formation and installation within the device packaging to trim one or more performance parameters of interest, including modulation, bias and other dynamic behaviors of the MEMS devices.

Abstract translation: 微机械机电传感器（MEMS）器件具有在器件封装中初始形成和安装之后精细调整的特征取向，以修剪一个或多个感兴趣的性能参数，包括MEMS器件的调制，偏置和其他动态行为。