PRODUCTION OF A SELF-SUPPORTING GLASS FILM
    122.
    发明申请
    PRODUCTION OF A SELF-SUPPORTING GLASS FILM 有权
    生产自支撑玻璃膜

    公开(公告)号:US20090098997A1

    公开(公告)日:2009-04-16

    申请号:US12282567

    申请日:2007-03-26

    Inventor: Toshihiro Kasai

    CPC classification number: C03B19/12 C03C1/008 C03C3/06 C03C2201/02 C03C2203/22

    Abstract: A process for the production of a self-supporting glass film is described. The method includes the steps of preparing a mixture containing a colloidal silica sol, at least one alkanolamine organic additive and an organic binder; coating the mixture onto a base material; drying the coated mixture to form a precursor film on the base material; releasing the precursor film from the base material; and firing the released precursor film to form a self-supporting glass film. Self-supporting glass films produced by the disclosed process are also described.

    Abstract translation: 描述了制造自支撑玻璃膜的方法。 该方法包括制备含有胶体二氧化硅溶胶,至少一种链烷醇胺有机添加剂和有机粘合剂的混合物的步骤; 将混合物涂覆在基材上; 干燥涂覆的混合物以在基材上形成前体膜; 从基材释放前体膜; 并焙烧释放的前体膜以形成自支撑玻璃膜。 还描述了通过公开的方法制备的自支撑玻璃膜。

    Method for producing radiation-resistant quartz glass material, and quartz glass material
    126.
    发明申请
    Method for producing radiation-resistant quartz glass material, and quartz glass material 审中-公开
    生产耐辐射石英玻璃材料的方法和石英玻璃材料

    公开(公告)号:US20040250572A1

    公开(公告)日:2004-12-16

    申请号:US10782935

    申请日:2004-02-23

    Abstract: A method for producing a quartz glass material with high resistance to radiation-induced density modifications when exposed to ultraviolet radiation at about 193 nm and energy densities of the order of the working energy densities of optical systems for microlithography, in which the peroxy defect level in the quartz glass material is minimized. In this way the creation of closely neighbored hydroxyl groups can be inhibited, which have been identified as an essential cause for radiation induced density reduction of the quartz glass material.

    Abstract translation: 一种用于制造在暴露于约193nm的紫外线辐射下具有高耐辐射诱导密度变化的石英玻璃材料的方法,以及用于微光刻的光学系统的工作能量密度级的能量密度,其中过氧缺陷水平 石英玻璃材料最小化。 以这种方式,可以抑制紧密相邻的羟基的产生,这已被认为是石英玻璃材料的辐射诱导密度降低的重要原因。

    Silica glass member for semiconductor and production method thereof
    128.
    发明申请
    Silica glass member for semiconductor and production method thereof 失效
    半导体二氧化硅玻璃及其制造方法

    公开(公告)号:US20030101748A1

    公开(公告)日:2003-06-05

    申请号:US10300739

    申请日:2002-11-21

    CPC classification number: C30B35/00 C03C3/06 C03C15/00 C03C2201/02 C03C2203/52

    Abstract: A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0 poise or more at 1200null C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.

    Abstract translation: Fe,Cu,Cr和Ni的各浓度为5ppb以下,OH基浓度为30ppm以下,在1200℃下的粘度为1013.0泊以上的半导体用硅玻璃构件。 被提供为具有高耐热性和高纯度的半导体用石英玻璃构件。

    Process for reducing or eliminating bubble defects in sol-gel silica glass
    129.
    发明申请
    Process for reducing or eliminating bubble defects in sol-gel silica glass 审中-公开
    减少或消除溶胶 - 凝胶石英玻璃中气泡缺陷的方法

    公开(公告)号:US20020157418A1

    公开(公告)日:2002-10-31

    申请号:US10101437

    申请日:2002-03-18

    Abstract: This invention resides in a process for making silica articles having few or no visible bubbles by sintering silica gels derived from a sol-gel process. The process incorporates control of pH during hydroxylation and gelation, as well as chlorination at temperatures previously considered unsuitable. The process optionally incorporates addition of dispersant to the silica solution.

    Abstract translation: 本发明在于通过烧结衍生自溶胶 - 凝胶法的二氧化硅凝胶来制造具有很少或没有可见气泡的二氧化硅制品的方法。 该过程包括在羟基化和凝胶化期间pH的控制,以及先前认为不合适的温度下的氯化。 该方法任选地将分散剂加入到二氧化硅溶液中。

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