公开(公告)号：US20030101748A1

公开(公告)日：2003-06-05

申请号：US10300739

申请日：2002-11-21

Applicant: TOSHIBA CERAMICS CO., LTD.

Inventor： Masanobu Ezaki ,  Lian-Sheng Pan ,  Seiji Taniike

IPC: C03B019/06

CPC classification number: C30B35/00 ,  C03C3/06 ,  C03C15/00 ,  C03C2201/02 ,  C03C2203/52

Abstract: A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0 poise or more at 1200null C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.

Abstract translation: Fe，Cu，Cr和Ni的各浓度为5ppb以下，OH基浓度为30ppm以下，在1200℃下的粘度为1013.0泊以上的半导体用硅玻璃构件。 被提供为具有高耐热性和高纯度的半导体用石英玻璃构件。