中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

291 records (took 0.018 seconds)

    WAVELENGTH SELECTIVE SWITCH AND WAVELENGTH SELECTION METHOD
    122.
    发明申请
    WAVELENGTH SELECTIVE SWITCH AND WAVELENGTH SELECTION METHOD 有权

    公开(公告)号：US20170123289A1

    公开(公告)日：2017-05-04

    申请号：US15408745

    申请日：2017-01-18

    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.

    Inventor： Xiao Ma ,  Xuecang Zhang ,  Jianyi Yang

    IPC: G02F1/313 ,  G02F1/01 ,  G02B6/293

    CPC classification number: G02F1/3133 ,  G02B6/29343 ,  G02B6/29382 ,  G02B6/29395 ,  G02B6/35 ,  G02F1/0147 ,  G02F2201/063 ,  G02F2203/15

    Abstract: A wavelength selective switch and a wavelength selection method are provided, where the wavelength selective switch includes: a dual-microring resonator, including a first microring and a second microring that are connected in series, where the first microring and the second microring respectively include one annular PN junction, and a direction of the annular PN junction of the first microring is the same as that of the annular PN junction of the second microring; an electric tuning module, where a first electric port of the electric tuning module is connected to a P zone of the first microring and an N zone of the second microring, a second electric port of the electric tuning module is connected to an N zone of the first microring and a P zone of the second microring; and a thermal tuning module, configured to adjust an operating temperature of the dual-microring resonator.

    Rib-Type Waveguide Silicon Modulators And Optical Devices
    123.
    发明申请
    Rib-Type Waveguide Silicon Modulators And Optical Devices 有权
    肋型波导硅调制器和光器件

    公开(公告)号：US20160357036A1

    公开(公告)日：2016-12-08

    申请号：US15238688

    申请日：2016-08-16

    Applicant: SiFotonics Technologies Co., Ltd.

    Inventor： Tuo Shi ,  Tzung-I Su ,  Yongbo Shao ,  Dong Pan

    IPC: G02F1/025 ,  G02B6/28

    CPC classification number: G02F1/025 ,  G02B6/2813 ,  G02F1/2257 ,  G02F2001/0152 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2203/15

    Abstract: A ring optical modulator includes a SOI substrate, including at least first and second top silicon layers, and a silicon-based ring resonator formed on the SOI substrate. The silicon-based ring resonator includes first and second top silicon layers, a thin dielectric gate layer disposed between the top silicon layers, first and second electric contacts, and first rib-type waveguide and ring-shape rib-type waveguide formed on the second top silicon layer. The thin dielectric layer includes a first side in contact with the first top silicon layer and a second side in contact with the second top silicon layer. With electric signals applied on the electric contacts, free carriers accumulate, deplete or invert within the top silicon layers on the first and second sides of the thin dielectric gate layer beneath the ring-shape rib-type waveguide, simultaneously, and a refractive index of the ring-shape rib-type waveguide confining optical fields is modulated.

    Abstract translation: 环形光调制器包括至少包括第一和第二顶硅层的SOI衬底和形成在SOI衬底上的硅基环形谐振器。 硅基环形谐振器包括第一和第二顶部硅层，设置在顶部硅层之间的薄介电栅极层，第一和第二电触点以及形成在第二硅层上的第一肋状波导和环形肋型波导 顶层硅层。 薄介电层包括与第一顶硅层接触的第一侧和与第二顶硅层接触的第二侧。 通过施加在电触头上的电信号，自由载流子同时在环状肋型波导下面的薄电介质栅极层的第一和第二侧的顶部硅层内积聚，消耗或反转，折射率 环形肋型波导限制光场被调制。

    Method for forming an optical modulator
    124.
    发明授权
    Method for forming an optical modulator 有权
    光调制器的形成方法

    公开(公告)号：US09329415B2

    公开(公告)日：2016-05-03

    申请号：US14071820

    申请日：2013-11-05

    Applicant: Agency for Science, Technology and Research

    Inventor： Jun-Feng Song ,  Xianshu Luo ,  Xiaoguang Tu ,  Patrick Guo-Qiang Lo ,  Mingbin Yu

    IPC: G02F1/025 ,  G02B6/12 ,  H01L29/15 ,  H01P11/00 ,  H01L21/3215 ,  H01L21/321 ,  H01L29/49

    CPC classification number: G02F1/025 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F2201/063 ,  G02F2202/06 ,  G02F2202/105

    Abstract: According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.

    Abstract translation: 根据本发明的实施例，提供了一种用于形成光调制器的方法。 该方法包括提供衬底，将第一导电类型的掺杂剂注入到衬底中以形成第一掺杂区域，将第二导电类型的掺杂剂注入到衬底中以形成第二掺杂区域，其中第二掺杂区域的一部分是 与第一掺杂区域的一部分形成并重叠，以在第一掺杂区域和第二掺杂区域的各个部分之间形成结，并且其中第二掺杂区域的剩余部分位于结点外部，并形成 脊波导，其中脊波导与结的至少一部分重叠。

    Optical device having electro-optic silicon modulator on large core fin waveguide and method to make the same
    125.
    发明授权
    Optical device having electro-optic silicon modulator on large core fin waveguide and method to make the same 有权
    在大芯片波导上具有电光硅调制器的光学器件及其制造方法

    公开(公告)号：US09323079B1

    公开(公告)日：2016-04-26

    申请号：US14605802

    申请日：2015-01-26

    Applicant: LaXense Inc.

    Inventor： Ningning Feng ,  Xiaochen Sun

    IPC: G02F1/035 ,  G02B6/42 ,  G02B6/26 ,  G02B6/10 ,  G02F1/025 ,  G02F1/225 ,  G02B6/122 ,  G02B6/12 ,  G02B6/14

    CPC classification number: G02F1/025 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/14 ,  G02F1/0356 ,  G02F1/225 ,  G02F1/2255 ,  G02F2201/063 ,  G02F2202/105

    Abstract: An optical modulator device made on large core silicon fin waveguide platform and its fabrication methods. The optical device includes two silicon optical coupling waveguides each having a lower ridge and an upper ridge, two mode transformers respectively connecting the coupling waveguides with an optical modulator waveguide. The optical modulator waveguide has a silicon fin waveguide structure with a narrower fin structure on top of a wider lower ridge structure. Each coupling waveguide and the corresponding mode transformer form a two-stage horizontal taper structure, namely a taper in the lower ridge of the coupling waveguide and a taper of the mode transformer. The light travelling in the coupling waveguide with majority of light in the upper ridge can gradually shift to the lower ridge of the optical modulator where an electro-optic region is positioned. The electro-optic region changes its optical property in response to an applied electric field.

    Abstract translation: 一种大芯片硅鳍波导平台上制作的光调制器及其制作方法。 光学器件包括两个硅光耦合波导，每个具有下脊和上脊，两个模式变压器分别将耦合波导与光调制器波导连接。 光调制器波导具有在更宽的下脊结构的顶部具有较窄鳍结构的硅鳍波导结构。 每个耦合波导和相应的模式变压器形成两级水平锥形结构，即耦合波导的下脊中的锥形和模式变压器的锥度。 在耦合波导中行进的光在上脊中的大部分光可以逐渐移动到光学调制器的下部，其中定位有电光区域。 电光区域响应于施加的电场而改变其光学特性。

    DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR
    130.
    发明申请
    DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR 有权
    双层隔离型P-N二极管调制器

    公开(公告)号：US20150011040A1

    公开(公告)日：2015-01-08

    申请号：US14492410

    申请日：2014-09-22

    Applicant: International Business Machines Corporation

    Inventor： William M. Green ,  Jessie C. Rosenberg ,  Yurii Vlasov

    IPC: G02B6/134 ,  G02B6/12

    CPC classification number: G02B6/1347 ,  G02B6/12 ,  G02B2006/12061 ,  G02F1/025 ,  G02F2201/063 ,  G02F2201/15 ,  G02F2202/06 ,  G02F2202/105

    Abstract: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

    Abstract translation: 一种光学调制器的制造方法包括在n型层的一部分上形成n型层，第一氧化物部分和n型层的第二部分上的第二氧化物部分，将第一掩模层图案化 第一氧化物部分，n型层的平面表面的部分和第二氧化物部分的部分，在n型层中注入p型掺杂剂以形成第一p型区和第二p型 去除所述第一掩蔽层，在所述第一氧化物部分上形成第二掩模层，所述第一p型区域的一部分和所述n型层的一部分，以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层，第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

Patent Agency Ranking