公开(公告)号：US06577058B2

公开(公告)日：2003-06-10

申请号：US09974818

申请日：2001-10-12

Applicant: Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

Inventor： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

IPC: H01L2912

CPC classification number: H01J1/308

Abstract: A cold electron emitter may include a heavily n+ doped wide band gap (WBG) substrate, a p-doped WBG region, and a low work function metallic layer (n+-p-M structure). A modification of this structure includes heavily p+ doped region between p region and M metallic layer (n+-p-p+-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible because the p-doped (or p+ heavily doped) WBG region acts as a negative electron affinity material when in contact with low work function metals. The injection emitters with the n+-p-M and n+-p-p+-M structures are stable since the emitters make use of relatively low extracting electric field and are not affected by contamination and/or absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

Abstract translation: 冷电子发射器可以包括重n +掺杂宽带隙（WBG）衬底，p掺杂WBG区和低功函数金属层（n + -p-M结构）。 该结构的修改包括p区和M金属层（n + -p-p + -M结构）之间的重p +掺杂区。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为当与低功函数金属接触时，p掺杂（或p +重掺杂）WBG区域充当负电子亲和材料。 具有n + -p-M和n + -p-p + -M结构的注入发射体是稳定的，因为发射体使用相对低的提取电场，并且不受来自加速离子的污染和/或吸收的影响。 此外，结构可以用当前最先进的技术制造。

公开(公告)号：US06538368B1

公开(公告)日：2003-03-25

申请号：US09513113

申请日：2000-02-25

Applicant: Neil Anthony Fox ,  Wang Nang Wang

Inventor： Neil Anthony Fox ,  Wang Nang Wang

IPC: H01J105

CPC classification number: H01J1/308 ,  H01J1/316 ,  H01J9/022 ,  H01J2201/30423 ,  H01J2329/00 ,  Y10S977/939

Abstract: An electron emitter, such as for a display, has a substrate and regions of n-type material and p-type material on the substrate arranged such that there is an interface junction between the regions exposed directly to vacuum for the liberation of electrons. The p-type region may be a thin layer on top of the n-type region or the two regions may be layers on adjacent parts of the substrate with adjacent edges forming the interface junction. Alternatively, there many be multiple interface junctions formed by p-type particles or by both p-type and n-type particles. The particles may be deposited on the substrate by an ink-jet printing technique. The p-type material is preferably diamond, which may be activated to exhibit negative electron affinity.

Abstract translation: 诸如用于显示器的电子发射器具有衬底，衬底上的n型材料和p型材料的区域被布置成使得在直接暴露于真空中的区域之间存在用于释放电子的区域之间的界面结。 p型区域可以是在n型区域的顶部上的薄层，或者两个区域可以是在衬底的相邻部分上的层，其中相邻边缘形成界面结。 或者，存在由p型颗粒或p型和n型颗粒形成的多个界面结。 可以通过喷墨打印技术将颗粒沉积在基底上。 p型材料优选为金刚石，其可被活化以显示出负电子亲和力。

公开(公告)号：US20020079823A1

公开(公告)日：2002-06-27

申请号：US09338047

申请日：1999-06-22

Inventor： FREDERIK C. GEHRING ,  RON KROON ,  TOM VAN ZUTPHEN

IPC: H01J029/46

CPC classification number: H01J29/04 ,  H01J1/308

Abstract: An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surface of the cathode, which source is capable of evolving, at the increased temperatures occurring during evacuation of the tube in the manufacturing process, a reducing agent such as F2 or HF, which passivates the free (Si) surface of the cathode.

Abstract translation: 具有用于发射电子的半导体阴极的电子管，该半导体阴极被布置在支撑体上，源极被布置在阴极附近，特别是面向阴极的自由（Si）表面， 源能够在制造过程中在管排空过程中发生的升高的温度下进行，即还原剂如F2或HF，其钝化阴极的游离（Si）表面。

公开(公告)号：US06350999B1

公开(公告)日：2002-02-26

申请号：US09449525

申请日：1999-11-29

Applicant: Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

Inventor： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

IPC: H01L310328

CPC classification number: H01J1/308

Abstract: In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

Abstract translation: 在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。 表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。

公开(公告)号：US20010007787A1

公开(公告)日：2001-07-12

申请号：US09753559

申请日：2001-01-04

Inventor： Junichi Sato ,  Nobuyuki Saotome

IPC: H01L021/76

CPC classification number: H01J3/022 ,  H01J1/308

Abstract: Disclosed is an electron discharging apparatus capable of fully accelerating electrons emitted from an electron discharging portion consisting of a pn-junction by effect of securing a greater exposure area of an accelerating electrode against said electron discharging portion. The inventive electron discharging apparatus comprises; a pn-junction formed on a surface side of a semiconductor substrate; an insulating film formed on the semiconductor substrate; a first aperture portion formed through a first insulating film formed on the pn-junction; and an accelerating electrode which is formed on the first insulating film by way of surrounding periphery of the first aperture portion. The accelerating electrode is formed so that inner edge portion of the accelerating electrode is projected into the first aperture portion area.

Abstract translation: 公开了一种电子放电装置，其能够完全加速从由pn结组成的电子放电部分发射的电子，其特征在于确保加速电极的较大曝光面积抵靠所述电子放电部分。 本发明的电子放电装置包括： 形成在半导体衬底的表面侧上的pn结; 形成在半导体衬底上的绝缘膜; 通过形成在pn结上的第一绝缘膜形成的第一开口部; 以及通过围绕第一开口部的周围形成在第一绝缘膜上的加速电极。 加速电极形成为使加速电极的内缘部突出到第一开口部区域。

公开(公告)号：US5880481A

公开(公告)日：1999-03-09

申请号：US22450

申请日：1998-02-12

Applicant: Ron Kroon ,  Tom Van Zutphen ,  Erwin Hijzen

Inventor： Ron Kroon ,  Tom Van Zutphen ,  Erwin Hijzen

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/308 ,  H01J29/16 ,  H01L29/12

CPC classification number: H01J1/308 ,  H01J29/16

Abstract: A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-emission efficiency are indicated.

Abstract translation: 一种半导体结构中的半导体阴极（11），其中通过用具有比半导体阴极的半导体材料更大的带隙的半导体材料（7）覆盖发光表面（4）来增加阴极的坚固性 。 指出了提高电子发射效率的各种措施。

公开(公告)号：US5838019A

公开(公告)日：1998-11-17

申请号：US415587

申请日：1995-04-03

Applicant: Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01L29/86 ,  H01J1/30 ,  H01J1/308 ,  H01L29/12

CPC classification number: H01J1/308

Abstract: An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.

Abstract translation: 电子发射器件设置有与第一电极接触的N型半导体。 P型半导体接触N型半导体以限定PN结。 低功函数金属电极与P型半导体接触，从而限定了肖特基势垒。 提供第一和第二装置以正向偏置PN结并且分别反向偏置肖特基势垒。

公开(公告)号：US5818500A

公开(公告)日：1998-10-06

申请号：US696428

申请日：1991-05-06

Applicant: Jon K. Edwards ,  Constantine N. Anagnostopoulos

Inventor： Jon K. Edwards ,  Constantine N. Anagnostopoulos

IPC: B41J2/44 ,  G06K15/12 ,  G09G3/20 ,  G09G3/22 ,  H01J1/308 ,  H01J31/12 ,  H04N1/036 ,  B41J2/447 ,  B41J2/385 ,  G09G3/10

CPC classification number: H01J31/12 ,  G06K15/1238 ,  G09G3/22 ,  H01J1/308 ,  G09G3/20

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide means for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract translation: 用于将以串行电荷的形式的图像数据转换为高分辨率成像光图案的图像源组合用于接收电荷的半导体电荷耦合器件，用于将电荷转换成电子发射的成像模式的相关联的小尺度场发射阵列 ，用于增强电子发射的电子倍增器，以及根据强化的电子发射的影响对光输出敏感的发光荧光体层。 光输出可以被引导到感光图像记录介质上，以提供用于图像记录的装置。 预期图像源的第二和第三实施例提供形成要直接观看的图像的光输出。

公开(公告)号：US5760417A

公开(公告)日：1998-06-02

申请号：US410396

申请日：1995-03-27

Applicant: Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

Inventor： Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/812 ,  H01L31/108 ,  H01L33/00

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.

Abstract translation: 在通过向金属材料或金属化合物材料和p型半导体之间的肖特基势垒结施加反向偏置电压并从外部从固态表面发射电子来引起雪崩击穿的半导体电子发射器件中，p 用于引起雪崩击穿的p型半导体区域（第一区域）接触用于向第一区域提供载流子的p型半导体区域（第二区域），并且在第一区域周围形成半绝缘区域。

公开(公告)号：US5414272A

公开(公告)日：1995-05-09

申请号：US224192

申请日：1994-04-07

Applicant: Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

Inventor： Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC: H01L29/872 ,  H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/48 ,  H01L29/56 ,  H01L29/64

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.

Abstract translation: 在半导体的表面区域中具有肖特基结的半导体元件发光元件包括具有第一载流子浓度的第一区域，具有第二载流子浓度的第二区域和具有第三载流子浓度的第三区域。 所有区域都位于形成肖特基结的电极之下。 第一，第二和第三载流子浓度满足第一区域的第一载流子浓度高于第二区域的第二载流子浓度，并且第二区域的第二载流子浓度高于第二区域的第三载流子浓度的条件 第三个地区。 第一，第二和第三区域具有以下结构：具有第二载流子浓度的至少一个第二区域位于第三载流子浓度的第三区域内，并且至少具有第一载流子浓度的第一区域位于所述 第二区域具有第二载流子浓度。