公开(公告)号：US11664182B2

公开(公告)日：2023-05-30

申请号：US17401823

申请日：2021-08-13

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Shigeya Kimura ,  Hisashi Yoshida ,  Hisao Miyazaki ,  Hiroshi Tomita ,  Souichi Ueno ,  Takeshi Hoshi

IPC: H01J1/308 ,  H01J45/00

CPC classification number: H01J1/308 ,  H01J45/00

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0

公开(公告)号：US09953796B2

公开(公告)日：2018-04-24

申请号：US15098108

申请日：2016-04-13

Applicant: HRL Laboratories, LLC

Inventor： Biqin Huang ,  Christopher S. Roper ,  Tahir Hussain

IPC: H01J1/62 ,  H01J1/308 ,  H01J1/304 ,  H01J9/02 ,  H01J21/10

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J9/025 ,  H01J21/10

Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

公开(公告)号：US20180040449A1

公开(公告)日：2018-02-08

申请号：US15783394

申请日：2017-10-13

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood,, JR.

IPC: H01J19/24 ,  H01J9/02 ,  H01J9/18

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US20170365507A1

公开(公告)日：2017-12-21

申请号：US15630597

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Damian Sojka ,  Andre Schmenn ,  Carsten Ahrens

IPC: H01L21/762 ,  H01L23/60 ,  H01L21/764 ,  H02H9/04 ,  H01L27/02 ,  H01L23/00

CPC classification number: H01L21/76289 ,  B81C1/00119 ,  B81C1/00214 ,  B81C1/00404 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/0111 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0135 ,  B81C2201/016 ,  B81C2201/0198 ,  B81C2201/053 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/764 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/0288 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H02H9/046 ,  H03K17/545 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

公开(公告)号：US20170117112A1

公开(公告)日：2017-04-27

申请号：US15398537

申请日：2017-01-04

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

公开(公告)号：US09548180B2

公开(公告)日：2017-01-17

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304 ,  H01L31/0352 ,  H01L21/3065

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US09536696B1

公开(公告)日：2017-01-03

申请号：US15013699

申请日：2016-02-02

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01L29/06 ,  H01J1/304 ,  H01J1/308

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

Abstract translation: 水平多层结边缘场发射器包括由隔离层隔开的多个垂直堆叠的多层结构。 每个多层结构被配置为在结构内的两层之间的接合处产生二维电子气。 发射器还包括与多个垂直层叠的多层结构中的每一个的二维电子气相交的暴露表面，以形成多个有效的一维水平线电子发射源。

公开(公告)号：US09390878B2

公开(公告)日：2016-07-12

申请号：US14599986

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  De-Jie Li ,  Chun-Hai Zhang ,  Duan-Liang Zhou ,  Bing-Chu Du ,  Shou-Shan Fan

IPC: H01L29/06 ,  H01J1/308 ,  H01J1/312

CPC classification number: H01J1/308 ,  H01J1/312 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484 ,  Y10S977/939

Abstract: An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.

Abstract translation: 电子发射源包括以该顺序堆叠的第一电极，半导体层，绝缘层和第二电极，其中电子收集层夹在半导体层和绝缘层之间，电子收集层与 半导体层和绝缘层，并且电子收集层是用于收集电子的导电层。

公开(公告)号：US20150206699A1

公开(公告)日：2015-07-23

申请号：US14599989

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  DE-JIE LI ,  CHUN-HAI ZHANG ,  DUAN-LIANG ZHOU ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J31/12 ,  H01J29/18 ,  H01J29/02

CPC classification number: H01J31/12 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J29/02 ,  H01J29/18 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes.

Abstract translation: 电子发射装置包括彼此间隔开的多个电子发射单元，其中多个电子发射单元中的每一个包括彼此堆叠的第一电极，半导体层，绝缘层和第二电极，第一电极 包括碳纳米管层，在半导体层中限定多个孔，并且一部分碳纳米管层悬挂在孔数上。

公开(公告)号：US08981338B2

公开(公告)日：2015-03-17

申请号：US13849139

申请日：2013-03-22

Applicant: Sanken Electric Co., Ltd. ,  Hamamatsu Photonics K.K.

Inventor： Shunro Fuke ,  Tetsuji Matsuo ,  Yoshihiro Ishigami ,  Tokuaki Nihashi

IPC: H01J1/308 ,  H01J1/34 ,  H01J9/12 ,  H01J31/50 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J9/025 ,  H01J9/12 ,  H01J31/26 ,  H01J31/507

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0≦X

Abstract translation: 半导体光电阴极包括通过SiO 2层和形成在AlXGa1-XN层上的含碱金属的层结合到玻璃基板上的Al x Ga 1-x N层（0＆lt; nlE; X <1）。 AlXGa1-XN层包括第一区域，第二区域，第一区域和第二区域之间的中间区域。 第二区域具有通过交替层叠阻挡层和阱层而形成的半导体超晶格结构，中间区域具有通过交替层压阻挡层和阱层而形成的半导体超晶格结构。 当一对相邻的阻挡层和阱层被定义为单位部分时，单位部分中Al的组成比X的平均值随着距离第二区域和SiO 2层之间的界面位置的距离而至少在 中间区域。