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131.发明授权公开(公告)号：US10307950B2
公开(公告)日：2019-06-04
申请号：US15310907
申请日：2015-07-13
Applicant: South China University of Technology , GUANGZHOU HUAXINKE INTELLIGENT MANUFACTURING TECHNOLOGY CO., LTD.
Inventor： Jinping Qu , Guizhen Zhang , Xiaochun Yin
IPC: B29C45/46 , B29C45/20 , B29C45/54 , B29C45/60 , B29B7/42 , B29C45/62 , B29C47/60 , F04C2/08 , F04C2/107 , B29C47/66 , B29C47/00 , B29C45/48 , B29C47/36 , B29C47/64 , B29B7/72 , B29C47/38
Abstract: The present invention relates to a volume pulsed deformation plasticating and conveying method and device by an eccentric rotor. The rotation of the eccentric rotor and the rolling of the rotor in the inner cavity of a stator during constant reverse revolutions cause the volume of the material between the eccentric rotor and the stator to periodically change alternatively along the axial direction and the radial direction of the stator, thereby enabling the volume pulsed deformation plasticating and conveying of the material. The volume pulsed deformation plasticating and conveying device consists of a stator, of which the inner cavity comprises multiple alternatingly disposed spiral segments and straight segments, and an eccentric rotor comprising multiple alternatingly disposed eccentric spiral segments and eccentric straight segments. The eccentric rotor is disposed in the inner cavity of the stator. The eccentric spiral segments and the eccentric straight segments of the eccentric rotor correspond one-to-one with the spiral segments and straight segments of the stator. The present invention can be used as the extruding system of an extruder or be combined with different plunger injection units to form a plasticating injection device of an injection molding machine. The present invention has a short thermo-mechanical distance for the materials, low energy consumption, and wide adaptability.
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公开(公告)号：US20190160426A1
公开(公告)日：2019-05-30
申请号：US16092493
申请日：2017-11-09
Applicant: South China University of Technology
Inventor： Qiang Huang , Linfan Shi , Bin Zhang , Xiong Fu
Abstract: The invention discloses a method for adsorbing ethylene gas using amorphous granular starch. The method firstly prepares amorphous granular starch, wherein starch slurry is prepared from starch with a ethanol aqueous solution and NaOH solution is added dropwise so as to react at 30 to 35° C. for 20 to 50 minutes; Then the slurry is centrifuged, neutralized with an ethanol hydrochloride solution, washed and dried to obtain the amorphous granular starch. The amorphous granular starch is placed in a high-pressure reactor and ethylene gas is introduced after the reactor is vacuumized to react at 0.8 to 1.5 Mpa and 20 to 30° C. for 15 to 25 h so that starch powder product adsorbing with ethylene is obtained. The test result shows that the content of ethylene in the obtained product can reach more than 30%. The method is simple, highly efficient and cheap for the adsorption process of ethylene, and the product is expected to be widely applied in the field of fruit and vegetable modified atmosphere preservation.
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133.发明授权公开(公告)号：US10283829B2
公开(公告)日：2019-05-07
申请号：US15678103
申请日：2017-08-15
Applicant: South China University of Technology
Inventor： Xiu Yin Zhang , Jin-Xu Xu
Abstract: A filtering switch based on dielectric resonator is disclosed which comprising a rectangular dielectric resonator, a metal cavity in which the dielectric resonator is located, a switch circuitry and a T-shape feeding line structure. The ON- and OFF-states of the filtering switch based on dielectric resonator are realized by controlling a coupling between the dielectric resonator and the feeding line structure. EM fields of the rectangular dielectric resonator and T-shape feeding line structure have been theoretically analyzed and utilized to guide the coupling control. The results have shown low ON-state loss, high power capability and high OFF-state isolation. Transmission zeros are generated at both sides of the passband by cross coupling between dielectric resonators or between feeding line structures and coupling line structures, resulting in high skirt selectivity.
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公开(公告)号：US20190131710A1
公开(公告)日：2019-05-02
申请号：US15885763
申请日：2018-01-31
Applicant: South China University of Technology
Inventor： Yong-Mei Pan , Wanjun Yang , Shaoyong Zheng , Pengfei Hu
Abstract: A wideband circularly polarized antenna, comprising a ground plane, a radiating element and a plurality of metallic plates; the radiating element is defined above the ground plane, the metallic plates are sequentially and vertically defined around the ground plane, and displacements from the metallic plates to the center of the ground plane are the same. The wideband circularly polarized antenna provided by the present invention has a broad bandwidth and a compact configuration.
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公开(公告)号：US10262860B2
公开(公告)日：2019-04-16
申请号：US15741737
申请日：2017-06-30
Inventor： Liangchen Yan , Xiaoguang Xu , Linfeng Lan , Lei Wang , Junbiao Peng
IPC: H01L21/027 , H01L21/02 , H01L29/417 , H01L27/12 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/786
Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.
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Patent Agency Ranking
公开(公告)号：US20180345792A1
公开(公告)日：2018-12-06
申请号：US15779127
申请日：2016-11-25
Applicant: South China University of Technology
Inventor： Junfeng Liu , Jialei Wu , Jun Zeng , Fei Luo
CPC classification number: B60L1/00 , Y02T10/7005 , Y02T10/7241
Abstract: The present invention discloses a distributed high-frequency AC electrical system for the electric vehicle. The system divides all loads of the electric vehicle into four load areas according to their spatial positions. Four high-frequency inverters and four DC input interfaces are contained in the system, with each of the four load areas being configured with one of the four high-frequency inverters, and each of the four high-frequency inverters being configured with one of the four DC input interfaces. One end of each DC input interface is connected to the DC side of the corresponding high-frequency inverter, and the other end is connected to the storage battery of the electric vehicle. Each high-frequency inverter outputs a high-frequency AC bus to supply power for the loads in the corresponding load area, and the four high-frequency inverters are in a parallel operation state through a high-frequency connection point that connects the four high-frequency AC buses. The present invention has the advantages of simplifying the electrical system structure of the electric vehicle, improving the system stability, and the like.
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137.发明申请公开(公告)号：US20180345400A1
公开(公告)日：2018-12-06
申请号：US16049956
申请日：2018-07-31
Applicant: South China University of Technology
Inventor： Zhenmin Wang , Wenyan Fan , Chun Jiang , Qian Wang
Abstract: The invention provides a DSC-based full-digital SiC inversion type multi-function argon arc welding power supply, which includes a main circuit and a DSC control circuit; the main circuit includes a common mode noise suppression module, a power frequency rectification and filter module, a SiC inversion and commutation module, power transformer, a SiC rectification and smoothing module and a non-contact arc ignition module connected in sequence and are respectively connected to external arc load; the DSC control circuit includes a DSC minimum system, a human-machine interaction module, a fault diagnosis and protection module, a SiC high-frequency drive module connected to SiC inversion and commutation module, and an electrical load signal detection module connected to the arc load. The argon arc welding power supply has a simple structure, high control accuracy, fast response, small size, high efficiency, low energy consumption and excellent process adaptability, which can improve the quality of welding process.
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138.发明授权公开(公告)号：US10122355B2
公开(公告)日：2018-11-06
申请号：US15555980
申请日：2016-12-17
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Bo Zhang , Yanwei Jiang
Abstract: The present invention provides a high-power adjustable high-frequency fractional order capacitor with an order greater than 1, and a control method thereof. The fractional-order capacitor comprises an alternating current input module, a coupling impedance, a high-frequency alternating current controlled voltage source, a controller and an alternating current input sampling module. The controller generates a corresponding control signal according to an input voltage signal and an input current signal which are acquired by the alternating current input sampling module, and controls an output voltage of the controlled power source, such that an input current and an input voltage satisfy a current-voltage relationship of the fractional-order capacitor. The obtained relationship between the input current and the input voltage is consistent with the definition of the fractional-order capacitor with the order greater than 1.
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公开(公告)号：US20180315777A1
公开(公告)日：2018-11-01
申请号：US15508484
申请日：2016-05-20
Inventor： Liangchen YAN , Guangcai YUAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L27/12 , H01L29/423 , H01L29/417 , H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.
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公开(公告)号：US10103373B2
公开(公告)日：2018-10-16
申请号：US14762716
申请日：2013-01-23
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Jian Hu , Jin Long , Xiwen Wang
Abstract: Diaphragm paper, and a preparation method and an application thereof. The diaphragm paper comprises a first layer, a second layer, and a third layer, wherein the second layer is located between the first layer and the third layer; the first layer and the third layer are loose layers, of which the average aperture is larger than 10 μm and the basis weight is 5 to 30 g/m2; and the second layer is a compact layer, of which the average aperture is smaller than 5 μm and the basis weight is 2 to 15 g/m2. The compact layer has small aperture and good insulating performance, and is capable of effectively insulating a positive electrode and a negative electrode. The loose layers have good liquid permeability and electrolyte absorptivity, and can guarantee the discharge performance of a battery. The material is further advantageous in having good dimensional stability and being thin, so that a battery can achieve high capacity.
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