Abstract:
An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.
Abstract:
Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.
Abstract:
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.
Abstract:
According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure, and is driven in a direction of the first electrode.
Abstract:
An electrostatic micro relay has a substrate, a signal line arranged on the substrate and having an input point configured to receive a signal and a plurality of signal channels configured to distribute the signal, the plurality of signal channels being each formed with a fixed contact, a plurality of movable contacts, each provided with respect to each of the fixed contacts and arranged so as to be opposed to a corresponding fixed contact across a space, a plurality of movable electrodes, each connected to each of the plurality of movable contacts and configured to make the connected movable contact brought into contact with and separated from the corresponding fixed contact, a cap, formed with a space configured to house the plurality of movable electrodes, and bonded with the substrate, and a signal input portion.
Abstract:
According to one embodiment, an electrostatic actuator includes an electrode unit, a conductive film body unit, a plurality of first urging units, and a plurality of second urging units. The electrode unit is provided on a substrate. The conductive film body unit is provided opposing the electrode unit. The plurality of first urging units are provided at a first circumferential edge portion of the conductive film body unit to support the film body unit. The plurality of second urging units are provided at a second circumferential edge portion opposing the first circumferential edge portion to support the film body unit. The electrode unit and the conductive film body unit contact or separate by the electrode unit being set to a voltage having a prescribed value. The plurality of first urging units have mutually different rigidities, and the plurality of second urging units have mutually different rigidities.
Abstract:
A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.
Abstract:
A liquid micro-electro-mechanical system (MEMS) component includes a board, a channel frame, a flexible channel side, a liquid droplet, and one or more conductive elements. The channel frame is within the board and mates with the flexible channel side to form a channel within the board. The liquid droplet is contained within the channel. When a pressure is applied to the flexible side, the shape of the liquid droplet is changed with respect to the one or more conductive elements thereby changing an operational characteristic of the liquid MEMS component.
Abstract:
Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.
Abstract:
The MEMS structure comprises: a flexible membrane (6), which has a main longitudinal axis (6a) defining a longitudinal direction (X), at least one pillar (3, 3′) under the flexible membrane (6), electric lowering actuation means (7) that are adapted to bend down the flexible membrane (6) into a down forced state electric raising actuation means (8) that are adapted to bend up the flexible membrane (6) into an up forced state. The electric lowering actuation means (7) or the electric raising actuation means (8) comprise an actuation area (7c or 8c), that extends under a part of the membrane (6) and that is adapted to exert pulling forces on the membrane (6) simultaneously on both sides of the said at least one pillar (3) in the longitudinal direction (X).