公开(公告)号：US20040101657A1

公开(公告)日：2004-05-27

申请号：US10642114

申请日：2003-08-15

Inventor： Donald R. Moles

IPC: B32B003/00

CPC classification number: B32B27/08 ,  B01L3/5027 ,  B32B3/00 ,  B32B3/30 ,  B32B27/00 ,  B32B27/281 ,  B32B37/12 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2379/08 ,  B81B2201/058 ,  B81C1/00071 ,  B81C2201/019 ,  C08J5/128 ,  C08J2379/08 ,  Y10T428/24562

Abstract: A microfluidic device comprising a first polyimide film having at least one microfeature formed in at least one surface thereof, and a second polyimide film adjacent the surface of the first polyimide film containing the microfeatures, a bonding layer between the first polyimide film and the second polyimide film, the bonding layer being a layer of a thermoplastic fluoropolymer.

Abstract translation: 一种微流体装置，其包括在其至少一个表面中形成有至少一个微特征的第一聚酰亚胺膜和与包含微特征的第一聚酰亚胺膜的表面相邻的第二聚酰亚胺膜，第一聚酰亚胺膜和第二聚酰亚胺之间的接合层 膜，粘合层是热塑性含氟聚合物的层。

公开(公告)号：US20040063239A1

公开(公告)日：2004-04-01

申请号：US10259173

申请日：2002-09-27

Inventor： Chang-Han Yun ,  Lawrence E. Felton ,  Maurice S. Karpman ,  John A. Yasaitis ,  Michael W. Judy ,  Colin Gormley

IPC: H01L021/00

CPC classification number: B81B7/0006 ,  B81B2201/042 ,  B81B2207/07 ,  B81C2201/019

Abstract: An intermediate electrode layer is used to fabricate an integrated micro-electromechanical system. An intermediate electrode layer is formed on an integrated circuit wafer. The intermediate electrode layer places drive electrodes a predetermined height above the surface of the integrated circuit wafer. A micro-electromechanical system wafer having micromachined optical mirrors is bonded to the integrated circuit wafer such that the drive electrodes are positioned a predetermined distance from the optical mirrors.

Abstract translation: 中间电极层用于制造集成的微机电系统。 在集成电路晶片上形成中间电极层。 中间电极层将驱动电极设置在集成电路晶片的表面上方的预定高度。 具有微加工光学镜的微电子机电系统晶片被结合到集成电路晶片，使得驱动电极位于距离光学镜的预定距离处。

公开(公告)号：US20040053507A1

公开(公告)日：2004-03-18

申请号：US10651051

申请日：2003-08-29

Applicant: FUJITSU LIMITED

Inventor： Shoji Okuda ,  Hiroshi Tokunaga ,  Osamu Tsuboi

IPC: H01L021/461

CPC classification number: B81C1/0019 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2201/019

Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

Abstract translation: 微机的制造方法包括在第一半导体基板6中埋入氧化膜54的步骤，将第一半导体基板与绝缘膜18接合在第二半导体基板上的工序，形成第一掩模 66，其在第一区域的开口和第一区域两侧的第二区域，用第一掩模66和氧化物膜54作为掩模蚀刻第一半导体衬底的步骤，从而形成与 在所述氧化膜和所述绝缘膜之间的第一半导体衬底，从而形成包括所述弹簧部分的扭杆，在所述第一区域和所述第二区域中形成具有开口的第二掩模74的步骤，蚀刻所述第二半导体 通过使用第二掩模74的衬底以及蚀刻第一区域和第二区域中的绝缘膜18的步骤。 可以容易地控制扭杆的厚度。 因此，可以以高产率制造具有扭杆的微型机器。

公开(公告)号：US20040035206A1

公开(公告)日：2004-02-26

申请号：US10397577

申请日：2003-03-26

Inventor： Paul A. Ward ,  Jeffrey T. Borenstein ,  Christopher M. Lento

IPC: G01P015/125 ,  G01P015/14

CPC classification number: G01P15/125 ,  B81C1/00357 ,  B81C2201/019 ,  G01C19/5719 ,  G01D3/028 ,  G01P15/0802 ,  G01P2015/0831

Abstract: A capacitive sensor such as a tuning-fork gyroscope or accelerometer having a reduced bias error. The electrical connection of the first capacitive plate to, e.g., a signal measuring device or a voltage source, induces a first voltage difference at the junction. The materials of the second capacitive plate are selected such that its electrical connection to, e.g., a signal measuring device or a voltage source, induces a second voltage difference that substantially offsets the first voltage difference and reduces the bias error. One embodiment forms the capacitive plates, e.g., a proof mass and a sense plate, from substantially identical doped semiconductors.

Abstract translation: 诸如音叉陀螺仪或加速度计的电容式传感器具有减小的偏差误差。 第一电容板与例如信号测量装置或电压源的电连接在接合处引起第一电压差。 选择第二电容板的材料使得其与例如信号测量装置或电压源的电连接引起基本上抵消第一电压差并减小偏置误差的第二电压差。 一个实施例从基本上相同的掺杂半导体形成电容板，例如检测质量块和感测板。

公开(公告)号：US06684469B2

公开(公告)日：2004-02-03

申请号：US10077495

申请日：2002-02-15

Applicant: Robert Horning ,  Burgess Johnson

Inventor： Robert Horning ,  Burgess Johnson

IPC: H04R1700

CPC classification number: B81B3/0021 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/019 ,  H02N1/006 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49146 ,  Y10T29/49155 ,  Y10T156/1025

Abstract: A method of manufacturing a microactuator device includes a plurality of generally parallel thin flexible sheets bonded together in a predetermined pattern to form an array of unit cells. Preferably, each of the sheets has only a single electrode layer located on one side of the sheet. Pairs of such sheets are then bonded together at spaced bonding locations with the electrode layers facing one another. Several sets of such sheet pairs can then be bonded together to form a microactuator device.

Abstract translation: 一种制造微致动器装置的方法包括以预定图案结合在一起以形成单元电池阵列的多个大致平行的薄柔性片。 优选地，每个片材仅具有位于片材的一侧上的单个电极层。 然后将这些片材的对在间隔的结合位置与电极层彼此面对地结合在一起。 然后可以将多组这样的片材对结合在一起以形成微致动器装置。

公开(公告)号：US20040004058A1

公开(公告)日：2004-01-08

申请号：US10154899

申请日：2002-05-23

Inventor： John Stephen Smith ,  Mark A. Hadley ,  Gordon S. W. Craig ,  Frank Lowe

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: H01L24/95 ,  B81C1/00357 ,  B81C1/00428 ,  B81C2201/019 ,  B82Y30/00 ,  G02F1/1362 ,  G02F2001/136295 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/4803 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/31 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/24225 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/95085 ,  H01L2224/95092 ,  H01L2224/95122 ,  H01L2224/95136 ,  H01L2224/95144 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15155 ,  H01L2924/15157 ,  H01L2924/15165 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10S977/883 ,  H01L2224/82 ,  H01L2924/00

Abstract: Methods for forming openings having predetermined shapes in a substrate and apparatuses with these openings. The methods may be used to form assemblies which include the substrate with its openings and elements which are disposed in the openings. In one example of a method, each of the elements include an electrical component and are assembled into one of the openings by a fluidic self assembly process. In an particular example of a method to create such an opening, the substrate is etched through a first patterned mask and is later etched through a second patterned mask. Typically, the second patterned mask is aligned relative to the opening created by etching through the first patterned mask and has an area of exposure which is smaller than an area of exposure through the first patterned mask. In another example of a method, a photosensitive material is exposed through a patterned mask to oblique sources of light such that some of the light impinges into a first portion of the photosensitive material which is under the patterned mask, and the patterned mask and a second portion of the photosensitive material, which is under the patterned mask, is removed. In another example of a method, an opening in a first layer, which comprises silicon dioxide, is formed by depositing a second layer over the first layer and depositing a tungsten layer over the second layer. The tungsten and second layers are patterned to expose a portion of the first layer, and this portion is etched. Various apparatuses which may be made using these methods are also described.

Abstract translation: 在基板上形成具有预定形状的开口的方法和具有这些开口的装置。 这些方法可以用于形成组件，其包括其开口的基板和设置在开口中的元件。 在方法的一个示例中，每个元件包括电气部件，并通过流体自组装工艺组装到一个开口中。 在创建这种开口的方法的特定示例中，通过第一图案化掩模蚀刻衬底，并且随后通过第二图案化掩模进行蚀刻。 通常，第二图案化掩模相对于通过蚀刻穿过第一图案化掩模而产生的开口对准，并且具有小于通过第一图案化掩模的曝光区域的曝光面积。 在方法的另一示例中，感光材料通过图案化掩模曝光到倾斜光源，使得一些光照射到图案化掩模下方的感光材料的第一部分中，并且图案化掩模和第二 除去在图案化掩模下方的感光材料的部分。 在方法的另一示例中，通过在第一层上沉积第二层并在第二层上沉积钨层来形成包括二氧化硅在内的第一层中的开口。 图案化钨和第二层以暴露第一层的一部分，并且蚀刻该部分。 还描述了可以使用这些方法制造的各种装置。

公开(公告)号：US20030230472A1

公开(公告)日：2003-12-18

申请号：US10173383

申请日：2002-06-14

Inventor： Marvin G. Wong ,  You Kondoh

IPC: H01H029/00

CPC classification number: B81C1/00873 ,  B81C1/00357 ,  B81C2201/019 ,  H01H1/0036 ,  H01H29/28 ,  H01H61/02 ,  H01H2029/008 ,  H01H2061/006

Abstract: A switch device and a method of manufacture are provided that includes providing two substrates. The two substrates collectively include a fluid conductor switch device structure and a trench surrounding the fluid conductor switch device structure. An inner seal material is deposed on one of the substrates and an outer seal material is deposited in the trench. The substrates are joined to one another using the inner seal material and a peripheral hermetic seal is formed between the substrates using the outer seal material.

Abstract translation: 提供一种开关装置和制造方法，其包括提供两个基板。 两个基板共同地包括流体导体开关装置结构和围绕流体导体开关装置结构的沟槽。 内部密封材料被放置在其中一个基底上，并且外部密封材料沉积在沟槽中。 使用内密封材料将基板彼此接合，并且使用外部密封材料在基板之间形成周边密封。

公开(公告)号：US06664126B1

公开(公告)日：2003-12-16

申请号：US10069616

申请日：2002-02-27

Applicant: Donald Lad Devoe ,  Lung-Wen Tsai

Inventor： Donald Lad Devoe ,  Lung-Wen Tsai

IPC: H01L2100

CPC classification number: H01L21/00 ,  B81C99/002 ,  B81C2201/019 ,  Y10S977/889

Abstract: This invention provides a fabrication process for manufacturing of truly 3-dimensional micromechanisms which takes advantages of SOI (silicon-on-insulator) wafers each of which is processed to create a respective structural element of the 3-dimensional micromechanisms by DRIE (deep reactive ion etching) of the wafer and thermal oxidation of the trenches opened during the DRIE etching. The wafers are sequentially bonded into a multistack structure from which the 3-D micromechanism. is released by XeF2 etching. Thermally grown SiO2 is used as structural material for the 3-D micromechanism.

Abstract translation: 本发明提供了一种用于制造真正的三维微机械的制造方法，其利用SOI（绝缘体上硅）晶片的优点，每个硅晶片被处理以通过DRIE（深反应离子）产生三维微机械的相应结构元件 蚀刻）和在DRIE蚀刻期间打开的沟槽的热氧化。 晶片顺序地结合到多层结构中，由此可以获得三维微机构。 由XeF2蚀刻释放。 热成长的SiO2用作3-D微机械的结构材料。

公开(公告)号：US20030221968A1

公开(公告)日：2003-12-04

申请号：US10387958

申请日：2003-03-13

Applicant: MEMGen Corporation

Inventor： Adam L. Cohen ,  Dennis R. Smalley

IPC: C25D005/02 ,  C25D017/00

CPC classification number: C25D5/02 ,  B81C1/00373 ,  B81C2201/019 ,  C23F1/00 ,  C25D1/003 ,  H01P11/003

Abstract: An electrochemical fabrication process produces three-dimensional structures (e.g. components or devices) from a plurality of layers of deposited materials wherein the formation of at least some portions of some layers are produced by operations that remove material or condition selected surfaces of a deposited material. In some embodiments, removal or conditioning operations are varied between layers or between different portions of a layer such that different surface qualities are obtained. In other embodiments varying surface quality may be obtained without varying removal or conditioning operations but instead by relying on differential interaction between removal or conditioning operations and different materials encountered by these operations.

Abstract translation: 电化学制造工艺从多个沉积材料层产生三维结构（例如组件或器件），其中通过去除沉积材料的选定表面的材料或条件的操作产生一些层的至少一些部分的形成。 在一些实施例中，去除或调节操作在层之间或层的不同部分之间变化，使得获得不同的表面质量。 在其它实施例中，可以在不改变去除或调节操作的情况下获得变化的表面质量，而是通过依赖于去除或调节操作与这些操作遇到的不同材料之间的差异相互作用。

公开(公告)号：US06655923B1

公开(公告)日：2003-12-02

申请号：US09979138

申请日：2002-03-22

Applicant: Thomas Lisec ,  Bernd Wagner

Inventor： Thomas Lisec ,  Bernd Wagner

IPC: F04F1100

CPC classification number: F04B43/12 ,  B01L3/5027 ,  B81C1/00357 ,  B81C2201/019 ,  F04B43/043

Abstract: A micromechanical pump has a membrane (2) positioned above a substrate (1). The substrate is provided with a cavity (8) which is formed in an endlessly continuous shape (e.g., circular) to provide a channel for a drive fluid. A cover (9) is positioned above the substrate with the membrane being between the substrate and cover. The cover is provided with an inlet (11) and outlet (10). Electrodes (3, 4) are provided around the floor of the cavity. The electrodes are selectively actuated so as to attract selected areas of the membrane resulting in a gap forming between the cover and the selected areas of the membrane. The areas of the membrane above the non-selected electrodes form a seal with the cover. By selectively actuating the electrodes a peristaltic pumping action results in a pumped fluid traveling from the inlet, through the gaps and out the outlet.

Abstract translation: 微机械泵具有位于基板（1）上方的膜（2）。 衬底设置有空腔（8），其形成为环形连续形状（例如，圆形），以提供用于驱动流体的通道。 覆盖物（9）位于衬底上方，膜位于衬底和覆盖层之间。 盖设有入口（11）和出口（10）。 电极（3,4）设置在空腔的地板周围。 选择性地致动电极以吸引膜的选定区域，从而在盖和膜的选定区域之间形成间隙。 未选择的电极上方的膜的区域与盖形成密封。 通过选择性地致动电极，蠕动泵送动作导致泵送的流体从入口行进通过间隙并从出口出来。