SINGLE-PHOTON DETECTOR, SINGLE-PHOTON DETECTOR ARRAY, AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20240125646A1

    公开(公告)日:2024-04-18

    申请号:US17966502

    申请日:2022-10-14

    CPC classification number: G01J1/44 G01J1/0425 G01J2001/442

    Abstract: The invention provides a single-photon detector that includes a superconducting wire made from a high quality and uniform superconducting film with a higher critical temperature. A reflector or a multilayered reflector with high reflectivity, preferably a nitride-based distributed Bragg reflector, is provided to reflect an incident light to the superconducting wire. A surface-plasmon wavelength-selective surface may be further provided above the superconducting wire to resonantly transmits the incident light within a selective passband, making the single-photon detector operable in the ultraviolet, visible, and infrared wavelength bands. In addition, a large area of superconducting film with high level of uniformity is grown to achieve the up scaling of the single-photon detector and a single-photon detector array.

    FRONT-END ELECTRONIC CIRCUITRY FOR AN ELECTROMAGNETIC RADIATION SENSOR APPLICATION

    公开(公告)号:US20240073550A1

    公开(公告)日:2024-02-29

    申请号:US18552684

    申请日:2022-04-06

    Abstract: A front-end electronic circuitry for an electromagnetic radiation sensor application comprises a charge sensitive amplifier stage with a first single-input operational transconductance amplifier, and a transistor being arranged in a first feedback path of the first single-input operational transconductance amplifier, and a signal shaper stage with a second single-input operational transconductance amplifier, and an active feedback circuit being arranged in a second feedback path of the second single-input operational transconductance amplifier. The front-end electronic circuitry further comprises a control circuit having a second transistor. The control circuit is configured to provide a control signal to control the transistor of the first feedback path in dependence on a gate-source voltage of the second transistor.

    LIGHT SENSOR
    139.
    发明公开
    LIGHT SENSOR 审中-公开

    公开(公告)号:US20230221420A1

    公开(公告)日:2023-07-13

    申请号:US18093210

    申请日:2023-01-04

    Inventor: Xavier BRANCA

    Abstract: A light sensor includes an integrated circuit chip and a boost DC/DC converter. The integrated circuit chip supports an array of pixels, each pixel including a SPAD. The boost DC/DC converter delivers to the SPADs a bias potential capable of placing the SPADs in Geiger mode. The boost DC/DC converter includes an inductive element, a first switch, a second switch, and a circuit for controlling on/off switching of the first switch. The inductive element and the first and second switches are arranged outside of the integrated circuit chip while the control circuit forms part of the integrated circuit chip.

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