DISPLAY DEVICE
    131.
    发明申请

    公开(公告)号:US20170373273A1

    公开(公告)日:2017-12-28

    申请号:US15699113

    申请日:2017-09-08

    Inventor: Masamitsu FURUIE

    Abstract: A light-emitting element display device includes: a display area which has an organic insulating layer that is made of an organic insulating material; a peripheral circuit area which is disposed around the display area and which has the organic insulating layer; and a blocking area that is formed between the display area and the peripheral circuit area. The blocking area includes: a first blocking area configured by only one or a plurality of inorganic material layers between an insulating base substrate and an electrode layer which covers the display area and is formed continuously from the display area, and which configures one of two electrodes for allowing the light emitting area to emit the light; and a second blocking area including a plurality of layers configuring the first blocking area, and a light emitting organic layer.

    DISPLAY DEVICE
    135.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20170133628A1

    公开(公告)日:2017-05-11

    申请号:US15281213

    申请日:2016-09-30

    Inventor: Masamitsu FURUIE

    Abstract: A light-emitting element display device includes: a display area which has an organic insulating layer that is made of an organic insulating material; a peripheral circuit area which is disposed around the display area and which has the organic insulating layer; and a blocking area that is formed between the display area and the peripheral circuit area. The blocking area includes: a first blocking area configured by only one or a plurality of inorganic material layers between an insulating base substrate and an electrode layer which covers the display area and is formed continuously from the display area, and which configures one of two electrodes for allowing the light emitting area to emit the light; and a second blocking area including a plurality of layers configuring the first blocking area, and a light emitting organic layer.

    A TOUCH CONTROL DISPLAY DEVICE
    138.
    发明申请
    A TOUCH CONTROL DISPLAY DEVICE 审中-公开
    触摸控制显示装置

    公开(公告)号:US20160259193A1

    公开(公告)日:2016-09-08

    申请号:US14408557

    申请日:2014-06-06

    Abstract: The present invention provides a touch control display device comprising an array substrate, a counter substrate arranged opposite to the array substrate, and a liquid crystal layer and a touch control layer located between the array substrate and the counter substrate, the counter substrate comprising an alkali glass base substrate. A first shield layer for preventing diffusion of alkali metal ions is formed at a side of the alkali glass base substrate of the counter substrate facing the array substrate, and the liquid crystal layer and the touch control layer are both located between the array substrate and the first shield layer. In the present invention, by forming a first shield layer for preventing diffusion of alkali metal ions at a side of the alkali glass base substrate of the counter substrate facing the array substrate, the alkali metal ions are blocked so that they can not diffuse into other layers of the substrate, so as to ensure physical and chemical stability of the transparent electrode and the liquid crystal in the display device and ensure display effect of the display device.

    Abstract translation: 本发明提供一种触摸控制显示装置,包括阵列基板,与阵列基板相对布置的对置基板,以及位于阵列基板和对置基板之间的液晶层和触摸控制层,对置基板包括碱 玻璃基底。 在面对阵列基板的对置基板的碱玻璃基板的一侧形成防止碱金属离子扩散的第一屏蔽层,液晶层和触摸控制层都位于阵列基板和 第一屏蔽层。 在本发明中,通过形成用于防止碱金属离子在面对阵列基板的对置基板的碱玻璃基底侧的扩散的第一屏蔽层,使碱金属离子不能扩散到其它 以确保显示装置中的透明电极和液晶的物理和化学稳定性,并确保显示装置的显示效果。

    Active matrix substrate, display device, and active matrix substrate manufacturing method
    139.
    发明授权
    Active matrix substrate, display device, and active matrix substrate manufacturing method 有权
    有源矩阵基板,显示装置和有源矩阵基板制造方法

    公开(公告)号:US09379143B2

    公开(公告)日:2016-06-28

    申请号:US14008183

    申请日:2012-03-22

    Inventor: Katsunori Misaki

    Abstract: An active matrix substrate (1) includes a source electrode (32), a drain electrode (33), and a semiconductor layer (31) of oxide semiconductor. A gate insulating layer (42) of silicon oxide is formed on the gate electrode (12a); a source electrode (32), a drain electrode (33), and a semiconductor layer (31) are formed on the gate insulating layer (42); a first protection layer (44) of silicon nitride is formed on the gate insulating layer (42) without covering the semiconductor layer (31); and a second protection layer (46) of silicon oxide is formed on the semiconductor layer (31). The first protection layer (44) covers the signal line (14) and the source connection line (36).

    Abstract translation: 有源矩阵基板(1)包括源电极(32),漏电极(33)和氧化物半导体的半导体层(31)。 在栅电极(12a)上形成氧化硅的栅极绝缘层(42); 在栅极绝缘层(42)上形成源电极(32),漏电极(33)和半导体层(31)。 在栅极绝缘层(42)上形成氮化硅的第一保护层(44)而不覆盖半导体层(31); 并且在半导体层(31)上形成氧化硅的第二保护层(46)。 第一保护层(44)覆盖信号线(14)和源极连接线(36)。

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