公开(公告)号：US20100139889A1

公开(公告)日：2010-06-10

申请号：US12709713

申请日：2010-02-22

Applicant: Shinichi Kurita ,  Suhail Anwar ,  Jae-Chull Lee

Inventor： Shinichi Kurita ,  Suhail Anwar ,  Jae-Chull Lee

IPC: H01L21/677 ,  F28F13/00

CPC classification number: H01L21/67201 ,  C23C14/566 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67751 ,  Y10S414/139

Abstract: Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate within a transfer cavity formed in a chamber body for two venting cycles. In another embodiment, the method includes transferring a substrate from a transfer cavity to a heating cavity formed in the chamber body, and heating the substrate in the heating cavity. In another embodiment, a load lock chamber includes a chamber body having substrate support disposed in a transfer cavity. The substrate support is movable between a first elevation and a second elevation. A plurality of grooves are formed in at least one of a ceiling or floor of the transfer cavity and configured to receive at least a portion of the substrate support when located in the second elevation.

Abstract translation: 本发明的实施例包括负载锁定室，具有负载锁定室的处理系统和用于在大气和真空环境之间传送衬底的方法。 在一个实施例中，该方法包括将经处理的基板保持在形成在室主体中的传送空腔内用于两个排气循环。 在另一个实施例中，该方法包括将基底从传递腔转移到形成在腔体中的加热腔，以及加热加热腔中的基底。 在另一个实施例中，负载锁定室包括具有设置在传送腔中的衬底支撑件的室主体。 衬底支撑件可在第一高度和第二高度之间移动。 多个槽形成在传送腔的天花板或地板中的至少一个中，并且被配置为当位于第二高度时容纳衬底支撑件的至少一部分。

公开(公告)号：US07695233B2

公开(公告)日：2010-04-13

申请号：US11477931

申请日：2006-06-30

Applicant: Masato Toshima

Inventor： Masato Toshima

IPC: C23F1/08

CPC classification number: H01L21/67201 ,  H01L21/67742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68778

Abstract: The substrate processing apparatus is capable of highly efficiently feeding and carrying out work and improving production efficiency. The substrate processing apparatus comprises: a processing chamber including a processing stage; a first load lock chamber for feeding the work, the first load lock chamber being communicated to the processing chamber; a second load lock chamber for carrying out the work, the second load lock chamber being communicated to the processing chamber; a first buffer storage being located between the processing chamber and the first load lock chamber, the first buffer storage storing the work to be transferred therebetween; and a second buffer storage being located between the processing chamber and the second load lock chamber, the second buffer storage storing the work to be transferred therebetween.

Abstract translation: 基板处理装置能够高效地进行加工和提高生产效率。 基板处理装置包括：处理室，包括处理台; 第一负载锁定室，用于馈送工件，第一负载锁定室与处理室连通; 第二负载锁定室，用于进行工作，所述第二负载锁定室与所述处理室连通; 第一缓冲存储器位于处理室和第一加载锁定室之间，第一缓冲存储器存储要在其间传送的工件; 以及位于所述处理室和所述第二加载锁定室之间的第二缓冲存储器，所述第二缓冲存储器存储要在其间传送的作业。

公开(公告)号：US20100087028A1

公开(公告)日：2010-04-08

申请号：US12575088

申请日：2009-10-07

Applicant: Keith Brian Porthouse ,  Peter G. Borden ,  Tristan R. Holtam ,  Lisong Zhou ,  Ian Scott Latchford ,  Derek Aqui ,  Vinay K. Shah

Inventor： Keith Brian Porthouse ,  Peter G. Borden ,  Tristan R. Holtam ,  Lisong Zhou ,  Ian Scott Latchford ,  Derek Aqui ,  Vinay K. Shah

IPC: H01L31/18 ,  H01L21/677

CPC classification number: H01L21/67236 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67213 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system. The processing chambers may be, for example, physical vapor deposition (PVD) or sputtering chambers, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, hot wire chemical vapor deposition (HWCVD) chambers, plasma nitridation (DPN) chambers, ion implant/doping chambers, atomic layer deposition (ALD) chambers, plasma etching chambers, annealing chambers, rapid thermal oxidation (RTO) chambers, rapid thermal annealing (RTA) chambers, substrate reorientation chambers, laser annealing chambers, and/or plasma cleaning stations. In one embodiment, a batch of solar cell substrates is simultaneously transferred in a vacuum or inert environment to prevent contamination from affecting the solar cell formation process.

Abstract translation: 本发明通常提供用于原位处理用于形成太阳能电池装置区域的薄膜叠层的批量基板处理系统或集群工具。 在一种构造中，在批次中形成在每个基板上的薄膜叠层包含一个或多个含硅层和一个或多个金属层，其在包含在基板处理系统中的各个室内被沉积和进一步处理。 处理室可以是例如物理气相沉积（PVD）或溅射室，等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，热线化学气相沉积（HWCVD）室，等离子体 氮化（DPN）室，离子注入/掺杂室，原子层沉积（ALD）室，等离子体蚀刻室，退火室，快速热氧化（RTO）室，快速热退火（RTA）室，基板重新取向室，激光退火室 ，和/或等离子体清洁站。 在一个实施例中，一批太阳能电池基板在真空或惰性环境中同时转移，以防止污染影响太阳能电池的形成过程。

公开(公告)号：US07682517B2

公开(公告)日：2010-03-23

申请号：US11353132

申请日：2006-02-14

Applicant: Eiichi Nishimura ,  Kenya Iwasaki

Inventor： Eiichi Nishimura ,  Kenya Iwasaki

IPC: B44C1/22

CPC classification number: H01L21/02063 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

Abstract translation: 一种能够容易地控制表面损伤层去除量的基板的处理方法，能够防止布线可靠性的降低。 在基板上的含碳低介电常数绝缘膜的碳浓度降低的表面损伤层在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。 已经暴露于混合气体的气氛的表面损伤层被加热到预定温度。

公开(公告)号：US07611322B2

公开(公告)日：2009-11-03

申请号：US11218085

申请日：2005-08-31

Applicant: Terry Bluck ,  Stuart Scollay ,  Edric Tong

Inventor： Terry Bluck ,  Stuart Scollay ,  Edric Tong

IPC: B65H1/00 ,  H01L21/677 ,  C23F1/00 ,  C23C16/00 ,  H01L21/00

CPC classification number: H01L21/67751 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/6831 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/139 ,  Y10S414/141

Abstract: There is described a wafer processing system for thinned wafers that are easily broken during handling. The system protects against breakage during handling and provides for temperature controls during processing.

Abstract translation: 描述了在处理过程中容易破碎的薄化晶片的晶片处理系统。 该系统在处理过程中防止破损，并在加工过程中提供温度控制。

公开(公告)号：US20090143911A1

公开(公告)日：2009-06-04

申请号：US11998858

申请日：2007-11-30

Applicant: Chris Gage ,  Damon Genetti

Inventor： Chris Gage ,  Damon Genetti

IPC: B25J13/00

CPC classification number: H01L21/68 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742

Abstract: Methods correcting wafer position error are provided. The methods involve measuring wafer position error on a robot, e.g. a dual side-by-side end effector robot, during transfer to an intermediate station. This measurement data is then used by a second robot to perform wafer pick moves from the intermediate station with corrections to center the wafer. Wafer position correction may be performed at only one location during the transfer process. Also provided are systems and apparatuses for transferring wafers using an intermediate station.

Abstract translation: 提供校正晶片位置误差的方法。 该方法涉及测量机器人上的晶片位置误差，例如。 双向并排端部执行器机器人，在传送到中间站时。 该测量数据然后被第二机器人用于执行从中间站的晶片拾取移动，其具有校正以使晶片居中。 晶片位置校正可以在传送过程中仅在一个位置进行。 还提供了使用中间站传送晶片的系统和装置。

公开(公告)号：US20090092466A1

公开(公告)日：2009-04-09

申请号：US12257262

申请日：2008-10-23

Applicant: Robert B. Moore ,  Eric Ruhland ,  Satish Sundar ,  Mario David Silvetti

Inventor： Robert B. Moore ,  Eric Ruhland ,  Satish Sundar ,  Mario David Silvetti

IPC: H01L21/677

CPC classification number: H01L21/67742 ,  H01L21/67201 ,  Y10S414/135 ,  Y10T29/49826

Abstract: A new apparatus for processing substrates is disclosed. A multi-level load lock chamber having four environmentally isolated chambers interfaces with a transfer chamber that has a robotic assembly. The robotic assembly has two arms that each can move horizontally as the robotic assembly rotates about its axis. The arms can reach into the isolated chambers of the load lock to receive substrates from the bottom isolated chambers, transport the substrates to process chambers, and then place the substrates in the upper chambers. The isolated chambers in the load lock chamber may have a pivotably attached lid that may be opened to access the inside of the isolated chambers.

Abstract translation: 公开了一种用于处理衬底的新设备。 具有四个环境隔离室的多级装载锁定室与具有机器人组件的传送室接口。 机器人组件具有两个臂，每个臂可随着机器人组件围绕其轴旋转而水平移动。 臂可以到达负载锁的隔离室，以从底部隔离室接收衬底，将衬底输送到处理室，然后将衬底放置在上腔室中。 负载锁定室中的隔离室可以具有可枢转地连接的盖，其可以打开以进入隔离室的内部。

公开(公告)号：US20090025631A1

公开(公告)日：2009-01-29

申请号：US12174158

申请日：2008-07-16

Applicant: Tsuyoshi MORIYA

Inventor： Tsuyoshi MORIYA

IPC: B05C11/00

CPC classification number: H01L21/67201

Abstract: A gas-tight module capable of preventing the collapse of a pattern formed on a principal surface of a substrate, without lowering throughput. A load lock module of a substrate processing system includes a transfer arm, a chamber, and a load lock module exhaust system. A plate-like member is disposed in the chamber such as to face the principal surface of a wafer transferred into the chamber. An exhaust passage isolated from the remaining space in the chamber is defined by the wafer and the plate-like member at a location right above the principal surface of the wafer. The sectional area of the exhaust passage is smaller than that of the remaining space in the chamber.

Abstract translation: 一种气密模块，其能够防止在基板的主表面上形成的图案的塌陷，而不会降低生产量。 衬底处理系统的负载锁定模块包括传送臂，腔室和负载锁定模块排气系统。 板状构件设置在室中，以便面向转移到室中的晶片的主表面。 在晶片和板状构件在晶片的主表面正上方的位置限定了与腔室中的剩余空间隔离的排气通道。 排气通道的截面面积小于室内的剩余空间。

公开(公告)号：US20090016855A1

公开(公告)日：2009-01-15

申请号：US12123365

申请日：2008-05-19

Applicant: Christopher Hofmeister ,  Martin R. Elliot ,  Alexander Krupyshev ,  Joseph Hallisey ,  Joseph A. Kraus ,  William Fosnight ,  Craig J. Carbone ,  Jeffrey C. Blahnik ,  Ho Yin Fong

Inventor： Christopher Hofmeister ,  Martin R. Elliot ,  Alexander Krupyshev ,  Joseph Hallisey ,  Joseph A. Kraus ,  William Fosnight ,  Craig J. Carbone ,  Jeffrey C. Blahnik ,  Ho Yin Fong

IPC: B65G53/34

CPC classification number: H01L21/67098 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67201

Abstract: A substrate processing tool including a frame forming at least one isolatable chamber configured to hold a controlled atmosphere, at least two substrate supports located within each of the at least one isolatable chamber, each of the at least two substrate supports being stacked one above the other and configured to hold a respective substrate and a cooling unit communicably coupled to the at least two substrate supports such that the at least two substrate supports and cooling unit effect simultaneous conductive cooling of each of the respective substrates located on the at least two substrate supports.

Abstract translation: 一种基板处理工具，其包括形成至少一个可分隔室的框架，该隔离室被构造成保持受控气氛，至少两个基板支撑件，位于所述至少一个可隔离室的每一个内，所述至少两个基板支撑件中的每个基板支撑件彼此堆叠 并且被配置为保持相应的基板和可通信地联接到所述至少两个基板支撑件的冷却单元，使得所述至少两个基板支撑件和冷却单元对位于所述至少两个基板支撑件上的各个基板的每个基板进行同时导电冷却。

公开(公告)号：US20090003976A1

公开(公告)日：2009-01-01

申请号：US12123329

申请日：2008-05-19

Applicant: Christopher Hofmeister ,  Alexander Krupyshev ,  Ulysses Gilchrist

Inventor： Christopher Hofmeister ,  Alexander Krupyshev ,  Ulysses Gilchrist

IPC: B65G69/00 ,  B66C23/00 ,  B65H1/00

CPC classification number: H01L21/677 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/67775

Abstract: A substrate processing system including a load port module configured to hold at least one substrate container for storing and transporting substrates, a substrate processing chamber, an isolatable transfer chamber capable of holding an isolated atmosphere therein configured to couple the substrate processing chamber and the load port module, and a substrate transport mounted at least partially within the transfer chamber having a drive section fixed to the transfer chamber and having a SCARA arm configured to support at least one substrate, the SCARA arm being configured to transport the at least one substrate between the at least one substrate container and the processing chamber with but one touch of the at least one substrate, wherein the SCARA arm comprises a first arm link, a second arm link, and at least one end effector serially pivotally coupled to each other, where the first and second arm links have unequal lengths.

Abstract translation: 一种基板处理系统，包括负载端口模块，该负载端口模块被配置为保持用于存储和传送基板的至少一个基板容器，基板处理室，能够保持隔离气体的可隔离转移室，配置成将基板处理室和负载端口 模块和至少部分地安装在所述传送室内的衬底传送器，其具有固定到所述传送室的驱动部分并且具有被配置为支撑至少一个衬底的SCARA臂，所述SCARA臂被配置为将所述至少一个衬底 至少一个衬底容器和所述处理室，所述处理室具有所述至少一个衬底的一个触点，其中所述SCARA臂包括第一臂连杆，第二臂连杆和至少一个末端执行器，所述至少一个末端执行器彼此串联地枢转地联接，其中 第一和第二臂连杆具有不相等的长度。