公开(公告)号：US20040099215A1

公开(公告)日：2004-05-27

申请号：US10716096

申请日：2003-11-18

Applicant: Applied Materials, Inc.

Inventor： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

IPC: C23C016/00

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Abstract translation: 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

公开(公告)号：US06730175B2

公开(公告)日：2004-05-04

申请号：US10055634

申请日：2002-01-22

Applicant: Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

Inventor： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

IPC: H01L2100

CPC classification number: C23C16/45521 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/67092

Abstract: A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.

Abstract translation: 提供了一种用于在处理期间支撑基板的基板支撑组件。 在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。 基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。 基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。

公开(公告)号：US06723202B2

公开(公告)日：2004-04-20

申请号：US09840178

申请日：2001-04-24

Applicant: Toshifumi Nagaiwa ,  Shuei Sekizawa ,  Kosuke Imafuku ,  Jun Ooyabu

Inventor： Toshifumi Nagaiwa ,  Shuei Sekizawa ,  Kosuke Imafuku ,  Jun Ooyabu

IPC: H01L213065

CPC classification number: H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001

Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

Abstract translation: 等离子体蚀刻装置包括设置在密封处理室中的工作台。 工作台具有用于在其上放置晶片的主表面和用于在其上放置聚焦环的子表面。 用于向主表面和副表面供给冷的冷却机构设置在工作台中。 由导电硅橡胶制成的传热介质插入在子表面和聚焦环之间。 按压机构将聚焦环向下表面推压。 传热介质提高了子表面和聚焦环之间的热导率，比没有热转印介质的情况要高。

公开(公告)号：US20040041094A1

公开(公告)日：2004-03-04

申请号：US10653735

申请日：2003-09-02

Inventor： Remco Theodorus Johannes Petrus Geurts ,  Michael Frederick Hayles

IPC: G01N023/225

CPC classification number: G01N1/42 ,  G01N1/32 ,  H01J37/28 ,  H01J2237/2001

Abstract: In relatively thick samples for electron microscopy imaging, details of interest are often located in the bulk of the sample, so that they cannot be directly imaged in the form of a SEM image. According to the invention, so as to expose the cross-section containing the details of interest, the frozen sample is subjected to ion milling, in such a manner that the desired cross-section is exposed. Thereafter, the exposed cross-section is further eroded in a controlled manner via sublimation, whereby the detail of interest is approached in a very accurate manner, and its fine details become visible. Hereafter, the finally desired SEM image can be made. By repetition of this process, a large number of successive cross-sections can be imaged, so that a spatial representation of the sample is obtained.

Abstract translation: 在相对厚的电子显微镜成像样本中，感兴趣的细节通常位于样品的大部分中，使得它们不能以SEM图像的形式直接成像。 根据本发明，为了暴露含有感兴趣细节的横截面，冷冻样品以暴露所需横截面的方式进行离子铣削。 此后，暴露的横截面通过升华以受控的方式进一步侵蚀，由此感兴趣的细节以非常准确的方式接近，并且其细节变得可见。 此后，可以制成最终期望的SEM图像。 通过重复该过程，可以对大量连续的横截面进行成像，从而获得样品的空间表示。

公开(公告)号：US06699374B2

公开(公告)日：2004-03-02

申请号：US09918248

申请日：2001-07-30

Applicant: Michael L. Marshall

Inventor： Michael L. Marshall

IPC: C23C1435

CPC classification number: H01J37/3438 ,  C23C14/35 ,  H01J37/3405 ,  H01J2237/2001

Abstract: An apparatus and method for cathodic magnetron sputtering of a coating onto a temperature-sensitive substrate is disclosed. The apparatus consists of a vacuum chamber having a work-supporting station and a magnetron sputtering target opposite the work-supporting station. The apparatus produces a magnetic field to contain, in an oval pattern, a gas plasma cloud which ejects target material toward the work-supporting station. The temperature of the substrate being coated is controlled by positioning the cooling anode within the sputtering chamber. The position of the cooling anode is adjusted relative to the cathode target to capture primary electrons that would otherwise impinge the substrate. It is in a position with respect to the cathode that does not interfere with the magnetic field.

Abstract translation: 公开了一种用于将涂层阴极磁控溅射到温度敏感衬底上的装置和方法。 该装置由具有工作支持台和与工作台相对的磁控溅射靶的真空室组成。 该装置产生一个磁场，以椭圆形的形式包含一个将目标材料朝工作支撑台喷出的气体等离子体云。 通过将冷却阳极定位在溅射室内来控制被涂覆的基板的温度。 冷却阳极的位置相对于阴极靶被调节以捕获否则会撞击衬底的一次电子。 它相对于阴极处于不干扰磁场的位置。

公开(公告)号：US06676804B1

公开(公告)日：2004-01-13

申请号：US09720910

申请日：2001-01-02

Applicant: Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

Inventor： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

IPC: H05H100

CPC classification number: H01L21/6831 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67248 ,  Y10S156/915

Abstract: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

Abstract translation: 静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘 表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平 以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量 基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

公开(公告)号：US06660959B2

公开(公告)日：2003-12-09

申请号：US10301053

申请日：2002-11-21

Applicant: Robert Ryan Vallance ,  Apparao M. Rao ,  M. Pinar Menguc

Inventor： Robert Ryan Vallance ,  Apparao M. Rao ,  M. Pinar Menguc

IPC: B23K1500

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2237/2001 ,  Y10S977/888 ,  Y10S977/901

Abstract: Novel methods and devices for nanomachining a desired pattern on a surface of a conductive workpiece are disclosed. In one aspect, the method comprises using an electron beam emitted from one or more nanotubes to evaporate nanoscale quantities of material from the workpiece surface. The surface of the workpiece to be machined may be excited to a threshold energy to reduce the amount of power required to be emitted by the nanotube. In another aspect, a device is described for nanomachining a desired pattern on a surface of a conductive workpiece, comprising a vessel capable of sustaining a vacuum, a leveling support, a nanopositioning stage, and a laser for heating the workpiece. A nanotool is provided comprising at least one nanotube supported on an electrically conductive base, adapted to emit an electron beam for evaporating material from an electrically conductive workpiece.

Abstract translation: 公开了用于在导电工件的表面上纳米加工所需图案的新颖方法和装置。 一方面，该方法包括使用从一个或多个纳米管发射的电子束从工件表面蒸发纳米量的材料。 待加工的工件的表面可以激发到阈值能量以减少由纳米管发射的功率量。 在另一方面，描述了一种用于在导电工件的表面上纳米加工所需图案的装置，包括能够维持真空的容器，平整支撑件，纳米定位台和用于加热工件的激光器。 提供了一种纳米工具，其包括至少一个支撑在导电基底上的纳米管，适于发射用于从导电工件蒸发材料的电子束。

公开(公告)号：US06648976B1

公开(公告)日：2003-11-18

申请号：US09511787

申请日：2000-02-23

Applicant: Izuru Matsuda ,  Hideo Haraguchi ,  Takuya Matsui ,  Shigeyuki Yamamoto

Inventor： Izuru Matsuda ,  Hideo Haraguchi ,  Takuya Matsui ,  Shigeyuki Yamamoto

IPC: C23C1600

CPC classification number: H01L21/6831 ,  G21K5/04 ,  H01J37/32009 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/6875

Abstract: A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.

Abstract translation: 等离子体处理装置包括用于从其中排出气体的真空室，用于在其中引入反应气体，并通过高频电力施加来产生等离子体。 在真空室中设置基板保持台，其中基板保持台包括具有凹部的固定面，其中待进行等离子体处理的基板的背面保持在设定面上。

公开(公告)号：US06646274B1

公开(公告)日：2003-11-11

申请号：US09505188

申请日：2000-02-16

Applicant: Arno J. Bleeker

Inventor： Arno J. Bleeker

IPC: H01J3700

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/7005 ,  G03F7/70466 ,  G03F7/70866 ,  H01J37/3174 ,  H01J2237/2001

Abstract: A lithographic projection device according to the present invention includes a first radiation source which supplies a projection beam of radiation of a first type, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging a portion of the mask, irradiated by the projection beam, onto a target portion of the substrate. Further, a second radiation source supplies a second beam of radiation of a second type which can be directed onto the substrate and a controller which patterns the second beam of radiation so that it impinges on the substrate in a particular pattern. The two radiation beams are controlled such that the sum of the fluxes of the radiation of the first and second type on the substrate causes an elevation of the substrate temperature which is substantially constant across at least a given area of the substrate.

Abstract translation: 根据本发明的光刻投影装置包括：第一辐射源，其提供第一类型的投影射束;用于保持掩模的掩模台;用于保持基板的基板台;以及投影系统， 由投影光束照射的掩模到基板的目标部分上。 此外，第二辐射源提供可被引导到衬底上的第二类型的第二辐射束，以及控制器，其将第二辐射束图案化，使得其以特定图案撞击在衬底上。 控制两个辐射束，使得第一和第二类型的辐射的通量在衬底上的总和导致在衬底的至少给定面积上基本恒定的衬底温度的升高。

公开(公告)号：US20030085204A1

公开(公告)日：2003-05-08

申请号：US10045363

申请日：2001-11-07

Inventor： Bryan C. Lagos

IPC: B24B001/00

CPC classification number: H01L21/6875 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/49126 ,  Y10T29/49165

Abstract: The invention provides a system and apparatus by which a workpiece pad is supplied to support workpieces being implanted in a rotating or spinning batch implanter process disk. The workpiece pad provides reduced surface adhesion forces and sufficient heat transfer from the workpieces to the process disk, and furthermore reduces particle generation and contamination of the workpiece from the workpiece pad. The workpiece pad furthermore comprises an ordered array of micro-structures. In addition, the invention includes a method of forming a workpiece pad comprising an ordered array of micro-structures.