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    VHF Broadband Coaxial Adapter
    1.
    发明公开
    VHF Broadband Coaxial Adapter 审中-公开

    公开(公告)号：US20240170256A1

    公开(公告)日：2024-05-23

    申请号：US17992432

    申请日：2022-11-22

    Applicant: Tokyo Electron Limited

    Inventor： John Carroll ,  Jianping Zhao

    IPC: H01J37/32

    CPC classification number: H01J37/32183 ,  H01J2237/336

    Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes a conductive conical frustum having an open top base, an open bottom base, and a surface area coupling the open top base to the open bottom base. A conductive cylinder is positioned within the conductive conical frustum with a closed bottom base and an open top base. The open top base of the conductive cylinder is connected to sidewalls of the open top base of the conductive conical frustum. The conductive cylinder has a height shorter than the height of the conductive conical frustum. The apparatus is configured to provide a broadband RF transition from a matching network to a resonating structure of the plasma processing system for frequencies ranging between 13 megahertz (MHz) and 220 MHz.

    Flame-Assisted Flash Sintering
    3.
    发明申请
    Flame-Assisted Flash Sintering 审中-公开
    火焰辅助闪光烧结

    公开(公告)号：US20160348247A1

    公开(公告)日：2016-12-01

    申请号：US14931761

    申请日：2015-11-03

    Applicant: nGimat Co.

    Inventor： Andrew Tye Hunt ,  Stephen Johnson ,  Ganesh Venugopal

    IPC: C23C24/08 ,  H01J37/248 ,  H01J37/32

    CPC classification number: C23C24/082 ,  C23C24/087 ,  H01J37/248 ,  H01J37/32027 ,  H01J37/32036 ,  H01J37/32064 ,  H01J37/32449 ,  H01J2237/332 ,  H01J2237/336 ,  H01L21/0237 ,  H05H1/48

    Abstract: The present disclosure is directed to an apparatus and method of sintering inorganic powder coatings on substrates, and includes a flame and an electric plasma. The method is capable of being used in an open atmospheric environment. The substrate is electrically conductive and is used as one electrode while the flame is used as the other electrode that is moved over the areas of the powder coating to be sintered. An electrical current is used to cause a plasma produced through the flame, resulting in a combined energy and temperature profile sufficient for inorganic powder-powder and powder-substrate bonding. This method is referred to as “flame-assisted flash sintering” (FAFS).

    Abstract translation: 本公开涉及一种在基底上烧结无机粉末涂层的装置和方法，并且包括火焰和电等离子体。 该方法能够在开放的大气环境中使用。 基板是导电的，并且用作一个电极，而火焰用作在待烧结的粉末涂层的区域上移动的另一个电极。 使用电流来引起通过火焰产生的等离子体，从而产生足够的无机粉末粉末和粉末 - 基底粘合的能量和温度分布。 该方法称为“火焰辅助闪蒸烧结”（FAFS）。

    METHOD AND SYSTEM FOR MODIFYING A SUBSTRATE USING A PLASMA
    4.
    发明申请
    METHOD AND SYSTEM FOR MODIFYING A SUBSTRATE USING A PLASMA 审中-公开
    使用等离子体修饰基板的方法和系统

    公开(公告)号：US20160141152A1

    公开(公告)日：2016-05-19

    申请号：US14903041

    申请日：2014-07-03

    Applicant: INNOVATION ULSTER LIMITED

    Inventor： Cormac Patrick Byrne ,  Brian Joseph Meenan ,  Kyle George Doherty

    IPC: H01J37/32

    CPC classification number: H01J37/32715 ,  B05D3/141 ,  H01J37/32348 ,  H01J37/32366 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/32825 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/336 ,  H01J2237/3382 ,  H05H1/2406 ,  H05H1/48

    Abstract: A method and system of modifying a substrate using a plasma are described comprising providing a first electrode and a second electrode; arranging the substrate such that a portion of the substrate is between the electrodes; supplying a voltage to at least one of the electrodes so as to create a plasma discharge between the electrodes which contacts at least said portion of the substrate, moving either the substrate and/or said second electrode such that said substrate and said second electrode are being linearly displaced relative to each other along an axis of linear displacement during said movement; and wherein said second electrode is arranged relative to said axis of linear displacement such that said linear movement causes a first section of the portion of substrate to have a greater residence time between the electrodes during said linear displacement than a second section of said portion of the substrate. A method and system of modifying a substrate using a plasma is also described comprising providing a first electrode and a second electrode; arranging the substrate such that a portion of the substrate is between the electrodes; supplying a voltage to at least one of the electrodes so as to create a plasma discharge between the electrodes which contacts at least said portion of the substrate, moving either the substrate and/or said second electrode such that said substrate and said second electrode are being linearly displaced relative to each other along an axis of linear displacement during said movement; and further comprising the step of rotating either the substrate or said second electrode about an axis of rotation during said relative linear displacement along said axis, so that a first section of the portion of substrate has a greater residence time between the electrodes than a second section of said portion of substrate.

    Abstract translation: 描述了使用等离子体修饰衬底的方法和系统，其包括提供第一电极和第二电极; 布置所述基板，使得所述基板的一部分位于所述电极之间; 向至少一个所述电极提供电压，以在所述电极之间产生等离子体放电，所述电极与所述衬底的至少所述部分接触，移动所述衬底和/或所述第二电极，使得所述衬底和所述第二电极为 在所述移动过程中沿着线性位移的轴线相对于彼此线性位移; 并且其中所述第二电极相对于所述线性位移轴线布置，使得所述线性运动使所述基板部分的第一部分在所述线性位移期间在所述电极之间具有比所述部分的所述部分中的第二部分更大的停留时间 基质。 还描述了使用等离子体修饰衬底的方法和系统，包括提供第一电极和第二电极; 布置所述基板，使得所述基板的一部分位于所述电极之间; 向至少一个所述电极提供电压，以在所述电极之间产生等离子体放电，所述电极与所述衬底的至少所述部分接触，移动所述衬底和/或所述第二电极，使得所述衬底和所述第二电极为 在所述移动过程中沿着线性位移的轴线相对于彼此线性位移; 并且还包括在所述相对线性位移期间沿着所述轴线旋转所述衬底或所述第二电极围绕旋转轴线旋转的步骤，使得所述衬底部分的第一部分在所述电极之间的停留时间比第二部分 的所述部分基底。

    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
    6.
    发明申请
    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 有权
    温度控制离子植入技术

    公开(公告)号：US20080044257A1

    公开(公告)日：2008-02-21

    申请号：US11770220

    申请日：2007-06-28

    Applicant: Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

    Inventor： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

    IPC: H01L21/677

    CPC classification number: H01L21/67115 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

    Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。

    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
    7.
    发明申请
    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 有权
    温度控制离子植入技术

    公开(公告)号：US20080042078A1

    公开(公告)日：2008-02-21

    申请号：US11778335

    申请日：2007-07-16

    Applicant: Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    Inventor： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    IPC: H01J37/08

    CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67109 ,  H01L21/67213

    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

    Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。

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