公开(公告)号：US20230249150A1

公开(公告)日：2023-08-10

申请号：US18186378

申请日：2023-03-20

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yosuke IWAI ,  Yoshiaki UCHIDA ,  Hiroshi YABU

IPC: B01J19/00 ,  B29C39/24 ,  C08J9/28 ,  C12M1/00 ,  G02B3/00 ,  B29C41/12 ,  B29C67/20 ,  B01D69/02 ,  B01D67/00 ,  B29D11/00 ,  B29C39/00 ,  B29C39/02 ,  B01D71/40 ,  B29D7/01

CPC classification number: B01J19/0093 ,  B29C39/24 ,  C08J9/28 ,  C12M23/20 ,  G02B3/00 ,  B01J19/00 ,  B29C41/12 ,  B29C67/202 ,  B01D69/02 ,  B01D67/0006 ,  B29D11/00298 ,  B29C39/003 ,  B29C39/026 ,  B01D71/40 ,  B29D7/01 ,  G02B3/0006 ,  B29L2011/0016

Abstract: A method for manufacturing a porous film includes: a first step of preparing droplets (D) which are formed from a first liquid into spheres with a predetermined diameter of 10 μm or more and 2000 μm or less and a second liquid (L2) which includes a curing agent which cures by imparting energy or a curing agent which cures due to change in pH and includes droplets dispersed therein; a second step of injecting the droplets and the second liquid into a gap between a pair of substrates (31 and 32); a third step of curing the second liquid to form an external phase; and the fourth step of removing the droplets in the external phase to form hole sections.

公开(公告)号：US20230189666A1

公开(公告)日：2023-06-15

申请号：US17926073

申请日：2021-04-08

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Atsushi NOGUCHI ,  Alto OSADA ,  Yasunobu NAKAMURA

IPC: H10N69/00 ,  G06N10/20

CPC classification number: H10N69/00 ,  G06N10/20

Abstract: A quantum gate device includes a first superconducting circuit which includes at least one of Josephson devices in an annular circuit including a superconducting wire and resonates at a first resonance frequency, a second superconducting circuit which includes at least one of Josephson devices in an annular circuit including a superconducting wire and resonates at a second resonance frequency, a connection unit which includes a capacitor and a superconducting wire provided at each electrode of the capacitor and connects the first and second circuits, a magnetic field application means applying a magnetic field to one or both of the first and second circuits, a quantum gate control electromagnetic wave irradiation unit irradiating one of the first and second circuits with a control electromagnetic wave, and an unnecessary transition suppression electromagnetic wave irradiation unit irradiating one of the first and second circuits with an unnecessary interaction suppression electromagnetic wave.

公开(公告)号：US20230142172A1

公开(公告)日：2023-05-11

申请号：US17911096

申请日：2021-03-12

Applicant: Japan Science and Technology Agency

Inventor： Takasi NISISAKO

IPC: B01F33/3012 ,  B01F33/30 ,  B01F33/3011 ,  B01F35/00 ,  B01F25/314 ,  B01F23/41 ,  B01F23/232 ,  B81B1/00

CPC classification number: B01F33/3012 ,  B01F33/30351 ,  B01F33/3011 ,  B01F35/561 ,  B01F25/31432 ,  B01F23/4143 ,  B01F23/2323 ,  B81B1/006 ,  B01F2215/0431 ,  B81B2201/057 ,  B81B2203/0338

Abstract: A microdroplet/bubble-generating device comprising a slit and a row of a plurality of microflow paths is constructed, in such a manner that either a continuous phase or dispersion phase is supplied to the slit, and so that the end of the slit, the other supply port for the continuous phase or dispersion phase and the liquid recovery port are connected. The plurality of microflow paths each have a narrow part where the cross-sectional area of the flow channel is locally narrowed adjacent to or near the connection point between the slit and the microflow path. The continuous phase and dispersion phase that have met at the connection points flow into the narrow parts, and the dispersion phase is sheared at the narrow parts with the continuous phase flow as the driving force, forming droplets or gas bubbles of the dispersion phase. The product is recovered from the liquid recovery port.

公开(公告)号：US20220376682A1

公开(公告)日：2022-11-24

申请号：US17881034

申请日：2022-08-04

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima

IPC: H03K3/02 ,  H03K5/01 ,  H03K19/20

Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.

公开(公告)号：US20220300539A1

公开(公告)日：2022-09-22

申请号：US17631622

申请日：2020-05-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Tomoo YOKOYAMA ,  Takashi SAKAJO

IPC: G06F16/31

Abstract: A word representation device is provided with a storage, and a word representation generator, in which the storage stores a correspondence relationship between each streamline structure and a character thereof regarding a plurality of streamline structures forming the flow pattern, the word representation generator is provided with a root determination means, a tree representation forming means, and a COT representation generation means, the root determination means determines a root of a given flow pattern, the tree representation forming means forms a tree representation of the given flow pattern by repeatedly executing processing of extracting a streamline structure of the given flow pattern, assigning a character to the extracted streamline structure, and deleting the extracted streamline structure from an innermost portion of the flow pattern until reaching the root, and the COT representation generation means converts the tree representation formed by the tree representation.

公开(公告)号：US20220291194A1

公开(公告)日：2022-09-15

申请号：US17829873

申请日：2022-06-01

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka MAJIMA ,  Trong Tue PHAN

IPC: G01N33/487 ,  C12Q1/6869

Abstract: A nanopore structure in an embodiment according to the present invention includes a first metal member having a thin film structure and a through hole, and a second metal member arranged to narrow a diameter of the through hole. The first metal member and the second metal member form a nanopore having a pore diameter of 10 nm or less.

公开(公告)号：US20220249386A1

公开(公告)日：2022-08-11

申请号：US17598515

申请日：2020-03-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takayuki FUJIWARA ,  Shunsuke HIROOKA ,  Shin-ya MIYAGISHIMA ,  Tsutomu OMATSU

IPC: A61K9/50 ,  A61K9/00 ,  C12N1/12 ,  A23K10/30 ,  A23K20/147 ,  A23K40/30 ,  A23L33/18

Abstract: There is provided a drug delivery composition containing an acid-resistant cell that encloses a drug in the cell. In addition, there is provided an acid-resistant cell in which a drug is enclosed in the cell, where the drug is localized in the sac-shaped membrane structure included in the acid-resistant.

公开(公告)号：US11331648B2

公开(公告)日：2022-05-17

申请号：US16333621

申请日：2017-09-29

Applicant: Japan Science and Technology Agency

Inventor： Takaiku Yamamoto ,  Masaya Matsuoka ,  Yu Horiuchi

IPC: B01J20/22 ,  B01J20/28 ,  B01J20/26 ,  B01J20/30 ,  B01J20/32 ,  B01D53/02 ,  C08G77/06 ,  C08L83/04 ,  C08L101/00

Abstract: A composite material containing a porous body having pores inside the porous body and a porous coordination polymer compound (PCP), in which the porous body has a network structure of Si—O bonds obtained by copolymerizing a dialkoxysilane and a trialkoxysilane, and the porous coordination polymer compound is carried in the pores of the porous body. Also, a method for producing a composite material containing a porous body having pores inside the porous body and a porous coordination polymer compound, in which the porous body has a network structure of Si—O bonds obtained by copolymerizing a dialkoxysilane and a trialkoxysilane, and the porous coordination polymer compound is carried in the pores of the porous body via a solvent.

公开(公告)号：US11254910B2

公开(公告)日：2022-02-22

申请号：US14461939

申请日：2014-08-18

Applicant: Japan Science and Technology Agency

Inventor： Koji Ikuta ,  Masashi Ikeuchi

IPC: C12N5/00 ,  C12N11/04 ,  B05C21/00 ,  B05D1/32 ,  C12N5/071 ,  C23C30/00 ,  H01L21/02

Abstract: A masking member contains parallel through-holes, each of the through-holes contains a tilted wall structure; an upper end of the tilted wall structure of one of the through-holes abuts on an upper end of the tilted wall structure of an adjacent one of the through-holes thereby forming a knife-edge ridge at the upper ends. The masking member may in contact with a substrate. Formation in quantity of various different populations of a substance being studied with multiple combinations of distribution form and distribution density may be conducted by dripping a suspension of a single concentration of the substance onto the masking member.

公开(公告)号：US11233193B2

公开(公告)日：2022-01-25

申请号：US16862598

申请日：2020-04-30

Applicant: Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

Inventor： Shinji Yuasa

IPC: H01L21/02 ,  H01L21/00 ,  H01L43/10 ,  H01F10/13 ,  G11C11/15 ,  H01L49/02 ,  H01L27/11507 ,  B82Y25/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32 ,  H01L43/02 ,  B82Y10/00

Abstract: A method of manufacturing a magnetoresistive random access memory (MRAM). The method includes forming a first CoFeB layer of the MTJ devices, the first CoFeB layer being amorphous and forming a magnesium oxide (MgO) layer of the MTJ devices over the first CoFeB layer. Further, there is a forming of a second CoFeB layer of the MTJ devices, the second CoFeB layer being amorphous over the MgO layer, and annealing the MTJ devices. The first and second CoFeB layers are crystallized by the annealing, and the MgO layer is poly-crystalline in which a (001) crystal plane is preferentially oriented.