公开(公告)号：US07952787B2

公开(公告)日：2011-05-31

申请号：US12436064

申请日：2009-05-05

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: G02B26/00 ,  G02B26/08

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US20110057288A1

公开(公告)日：2011-03-10

申请号：US12943269

申请日：2010-11-10

Applicant: Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

Inventor： Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

IPC: H01L29/06 ,  H01L21/71

CPC classification number: B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.

Abstract translation: 描述了微机电系统（MEMS）装置及其制造方法。 MEMS器件包括第一电极和第二电极。 第一电极设置在基板上，并且包括至少两个金属层，第一保护环和介电层。 第一保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。 电介质层设置在封闭空间中并连接两个相邻的金属层。 第二电极设置在第一电极上，其中在第一电极和第二电极之间形成空腔。

公开(公告)号：US07610814B2

公开(公告)日：2009-11-03

申请号：US11794807

申请日：2006-02-02

Applicant: Gatien Fleury ,  Pierre-Louis Charvet

Inventor： Gatien Fleury ,  Pierre-Louis Charvet

IPC: G01N3/00

CPC classification number: B81C1/00666 ,  B81B2201/016 ,  B81C2201/0167

Abstract: The micromechanical device comprises a mobile beam attached via the two ends thereof to a rigid frame comprising two arms each having two ends. The ends of an arm are respectively secured to the two ends of the mobile beam. Each arm has a middle part arranged between the two ends of the corresponding arm. A rear face of the middle part of each arm is attached to a base support. The frame comprises at least one stressed element enabling the state of stress of the beam to be adjusted. The stressed element can be centered between the front face and the rear face of the corresponding arm. The frame can comprise pairs of front and rear stressed elements arranged facing one another respectively on the front face and on the rear face of the arms.

Abstract translation: 微机械装置包括通过其两端连接到包括两个臂的刚性框架的移动梁，每个臂具有两个端部。 臂的端部分别固定到移动梁的两端。 每个臂具有布置在相应臂的两端之间的中间部分。 每个臂的中部的后表面附接到基座支撑件。 该框架包括至少一个应力元件，其能够调节梁的应力状态。 应力元件可以在相应臂的前表面和后表面之间居中。 框架可以包括分别在臂的前表面和后表面上相对排列的一对前和后应力元件。

公开(公告)号：US07569413B2

公开(公告)日：2009-08-04

申请号：US11703444

申请日：2007-02-07

Applicant: Takashi Kasai ,  Shuichi Wakabayashi

Inventor： Takashi Kasai ,  Shuichi Wakabayashi

IPC: H01L21/00 ,  H01L21/425

CPC classification number: B81B3/0072 ,  B81C2201/0167 ,  C23C16/24 ,  C23C16/56

Abstract: A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.

Abstract translation: 提供一种形成薄膜结构的方法，该薄膜结构由于受到机械应力的控制而具有较小的拉伸应力并且被制成导电性。 在诸如Si衬底的衬底上形成包括多晶硅薄膜的下部膜，然后将诸如P的杂质掺杂到下部膜中并进行热扩散，从而使下部膜导电。 然后，上膜被沉积在下膜上，上膜包括简单沉积并不导电的多晶硅薄膜。 上部膜具有与下部膜的压缩应力大致相同的拉伸应力，整体上由薄膜结构体构成，包括下部膜和上部膜的结构被调整为具有较小的拉伸应力。

公开(公告)号：US07522029B1

公开(公告)日：2009-04-21

申请号：US12179302

申请日：2008-07-24

Applicant: Mark Alfred Lantz

Inventor： Mark Alfred Lantz

IPC: H01H37/46 ,  F03G7/06

CPC classification number: H01H61/01 ,  B81B3/0072 ,  B81B2201/07 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H2061/006

Abstract: An actuator is provided. The actuator comprises a base portion, a cantilever beam connected to the base portion, and an actuator cell adjacent to the cantilever beam. The actuator cell comprises a first metal electrode positioned on the cantilevered beam, a second metal electrode positioned near the first metal electrode, and phase change material between the first and second metal electrodes, wherein the phase change material connects the first metal electrode to the second metal electrode, wherein applying a burst of energy to the phase change material causes the phase change material to change between an amorphous state and a crystalline state, causing the cantilevered beam to move between a first position and a target position, wherein the cantilevered beam remains at the target position upon removal of the energy.

Abstract translation: 提供一个致动器。 致动器包括基部，连接到基部的悬臂梁和与悬臂梁相邻的致动器单元。 所述致动器单元包括位于所述悬臂梁上的第一金属电极，位于所述第一金属电极附近的第二金属电极以及所述第一和第二金属电极之间的相变材料，其中所述相变材料将所述第一金属电极连接到所述第二金属电极 金属电极，其中向所述相变材料施加能量爆发导致所述相变材料在非晶状态和结晶态之间变化，导致所述悬臂梁在第一位置和目标位置之间移动，其中所述悬臂梁保持 在去除能量时在目标位置。

公开(公告)号：US20080148864A1

公开(公告)日：2008-06-26

申请号：US11794807

申请日：2006-02-02

Applicant: Gatien Fleury ,  Pierre-Louis Charvet

Inventor： Gatien Fleury ,  Pierre-Louis Charvet

IPC: G01N3/00 ,  G01N3/08

CPC classification number: B81C1/00666 ,  B81B2201/016 ,  B81C2201/0167

Abstract: The micromechanical device comprises a mobile beam attached via the two ends thereof to a rigid frame comprising two arms each having two ends. The ends of an arm are respectively secured to the two ends of the mobile beam. Each arm has a middle part arranged between the two ends of the corresponding arm. A rear face of the middle part of each arm is attached to a base support. The frame comprises at least one stressed element enabling the state of stress of the beam to be adjusted. The stressed element can be centered between the front face and the rear face of the corresponding arm. The frame can comprise pairs of front and rear stressed elements arranged facing one another respectively on the front face and on the rear face of the arms.

Abstract translation: 微机械装置包括通过其两端附接到包括两个臂的刚性框架的移动梁，每个臂具有两个端部。 臂的端部分别固定到移动梁的两端。 每个臂具有布置在相应臂的两端之间的中间部分。 每个臂的中部的后表面附接到基座支撑件。 该框架包括至少一个应力元件，其能够调节梁的应力状态。 应力元件可以在相应臂的前表面和后表面之间居中。 框架可以包括分别在臂的前表面和后表面上相对排列的一对前和后应力元件。

公开(公告)号：US07355268B2

公开(公告)日：2008-04-08

申请号：US11400076

申请日：2006-04-07

Applicant: Michael Goldstein

Inventor： Michael Goldstein

IPC: H01L23/58 ,  H01L29/06 ,  H01L29/12 ,  H01L27/148 ,  H01L29/74

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

Abstract translation: 具有高反射器可调应力涂层的光学装置包括微机电系统（MEMS）平台，设置在MEMS平台上的反射镜和设置在反射镜上的多层涂层。 多层涂层包括沉积在Ag层上的银（Ag）层，二氧化硅层（SiO 2 SiO 2），沉积在SiO 2层上的本征硅（Si）层 以及沉积在Si层上的氮氧化硅层（SiO x x N y Y y）。 氮的浓度增加和/或降低以调节应力（例如，拉伸，无，压缩）。

公开(公告)号：US20070196946A1

公开(公告)日：2007-08-23

申请号：US11703444

申请日：2007-02-07

Applicant: Takashi Kasai ,  Shuichi Wakabayashi

Inventor： Takashi Kasai ,  Shuichi Wakabayashi

IPC: H01L21/00

CPC classification number: B81B3/0072 ,  B81C2201/0167 ,  C23C16/24 ,  C23C16/56

Abstract: A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.

Abstract translation: 提供一种形成薄膜结构的方法，该薄膜结构由于受到机械应力的控制而具有较小的拉伸应力并且被制成导电性。 在诸如Si衬底的衬底上形成包括多晶硅薄膜的下部膜，然后将诸如P的杂质掺杂到下部膜中并进行热扩散，从而使下部膜导电。 然后，上膜被沉积在下膜上，上膜包括简单沉积并不导电的多晶硅薄膜。 上部膜具有与下部膜的压缩应力大致相同的拉伸应力，整体上由薄膜结构体构成，包括下部膜和上部膜的结构被调整为具有较小的拉伸应力。

公开(公告)号：US20070090474A1

公开(公告)日：2007-04-26

申请号：US11222547

申请日：2005-09-08

Applicant: Gary Li ,  Bishnu Gogoi ,  Hemant Desai ,  Jonathan Hammond ,  Bernard Diem

Inventor： Gary Li ,  Bishnu Gogoi ,  Hemant Desai ,  Jonathan Hammond ,  Bernard Diem

IPC: H01L29/82

CPC classification number: B81B3/0078 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0167

Abstract: A MEMS device and method of fabrication including a plurality of structural tie bars for added structural integrity. The MEMS device includes an active layer and a substrate having an insulating material formed therebetween, first and second pluralities of stationary electrodes and a plurality of moveable electrodes in the active layer. A plurality of interconnects are electrically coupled to a second surface of each of the first and second pluralities of stationary electrodes. A plurality of anchors fixedly attach a first surface of each of the first and second pluralities of stationary electrodes to the substrate. A first structural tie bar couples a second surface of each of the first plurality of stationary electrodes and a second structural tie bar couples a second surface of each of the second plurality of stationary electrodes.

Abstract translation: 一种MEMS器件和制造方法，包括多个用于增加结构完整性的结构连接条。 MEMS器件包括有源层和在其间形成有绝缘材料的衬底，第一和第二多个固定电极以及有源层中的多个可移动电极。 多个互连件电耦合到第一和第二多个固定电极中的每一个的第二表面。 多个锚固体将第一和第二多个固定电极中的每一个的第一表面固定地附接到基板。 第一结构连接杆联接第一多个固定电极中的每一个的第二表面，并且第二结构连接条连接第二多个固定电极中的每一个的第二表面。

公开(公告)号：US07148077B2

公开(公告)日：2006-12-12

申请号：US10970069

申请日：2004-10-19

Applicant: Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

IPC: H01L21/00

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0167

Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

Abstract translation: 具有非常稳定的隔膜的微机械结构元件以纯正的前工艺和基底上的层结构实现。 该层结构包括至少一个牺牲层和牺牲层上方的一个隔膜层，其被构造用于铺设隔膜并在隔膜上产生稳定元件，为隔膜的稳定元件产生至少一个凹槽。 然后在牺牲层中产生的结构至少被表面封闭，其中至少一个材料层沉积在结构化牺牲层的上方，该材料层形成隔膜层的至少一部分并被构造成产生至少一个蚀刻孔 蚀刻从蚀刻孔下方的区域去除的牺牲层，隔膜和至少一个稳定元件被裸露，在隔膜下面形成空腔。