Abstract:
A monolithic detector uses a grid to block x-rays from inter-pixel regions such as are believed to cause electrical noise in the pixel signals.
Abstract:
An apparatus which exposes a substrate to radiant energy includes a unit which holds a first mask having a pattern which includes a pattern of a target mark, a unit which projects a pattern of radiant energy to the substrate through the first mask, a unit which holds a second mask having an auxiliary pattern for identifying the target mark to be formed on the substrate, and a unit which controls the projecting unit so as to project a pattern of radiant energy to the substrate through the second mask.
Abstract:
The present invention is directed to an infrared light assembly (10, 30, 80, 90). A preferred embodiment of the light assembly (10, 30, 80, 90) may be used on aircraft or other vehicles for landing, taxi mode, or search operations. The light assembly (10, 30, 80, 90) preferably only requires about 10 to 20 watts of power. The light assembly (10, 30, 80, 90) may include a housing (12, 32, 82), a base (14, 34, 50), an IR diode (16, 36, 60), and an aspheric lens (18, 38). The base (14, 34, 50) is preferably connected to the bottom portion (22) of the housing(12, 32, 82), and the aspheric lens (18, 38) is preferably connected to the top portion (24) of the housing (12, 32, 82). The IR diode (16, 36, 60) may be mounted on the base (14, 34, 50). The housing (12, 32, 82) and the base (14, 34, 50) preferably have high thermal conductivity, and they preferably act as heat sinks. In addition, a plurality of thermal electric coolers (20, 40, 70) may be positioned between the base (14, 34, 50) and the IR diode (16, 36, 60) for additional dissipation of the heat generated by the light assembly. The IR diode (16, 36, 60) is adapted to emit infrared light. The light assembly (10, 30, 80, 90) preferably maintains a substantially constant operating temperature so that the peak emission of the IR diode (16, 36, 60) is substantially maintained. The infrared light may radiate through the hollow of the housing(12, 32, 82) to the aspheric lens (18, 38). The aspheric lens (18, 38) is preferably adapted to collimate infrared light. As a result, the light assembly (10, 30, 80, 90) may provide a collimated beam of infrared light having a NVIS radiant intensity greater than about 2.
Abstract:
The present invention relates to a sensor device for sensing an image of an object, wherein a detection means (14) for detecting radiation received from the object is supported by a light-emitting semiconductor means (12) for emitting radiation towards said object during a predetermined operation period of the detection means (14). The detection means (14) can be operated even at low light intensity conditions and at a low power consumption. The detection means (14) may be a two-side illuminated detection means, wherein one side is supported by the light-emitting semiconductor means (12) and the other side is a back-etched side with increased sensitivity. A cheap and very small multi-purpose camera or sensor module can thereby be provided.
Abstract:
An image pick-up apparatus and an image pick-up system constructed to prevent occurrence of random noise in a photographed image due to a random noise component produced in a reference supply circuit. An image pick-up apparatus has an area sensor driven by matrix driving, and a reference supply circuit for supplying a reference voltage for driving of the area sensor, and the reference voltage is supplied through a low-pass filter (LPF) coupled to the reference supply circuit. Further, a cutoff frequency of the low-pass filter preferably is determined so that an effective value of noise of the reference voltage having passed through the low-pass filter becomes not more than one-tenth of an effective value of random noise produced in pixels of the area sensor.
Abstract:
A method for determining a polarization state of light passed through the projection lens of a lithographic apparatus is described. Polarizing structures are disposed on an object side of the projection lens of the lithographic apparatus. By measuring light that has passed through the polarizing structures information regarding the polarization characteristics of the projection lens can be determined.
Abstract:
A measuring method for measuring current-voltage characteristics of a photoelectric conversion device by irradiating light to said photoelectric conversion device and a reference device corresponding to said photoelectric conversion device at the same time while detecting an irradiance of said light using said reference device, characterized in that a light responsive time constant of a irradiance detection circuit in which said reference device is used is adjusted so that said light responsive time constant of said irradiance detection circuit comes closer to a light responsive time constant of said photoelectric conversion device. An apparatus for practicing said measuring method.
Abstract:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
Abstract:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
Abstract:
A detector for scanning electron microscopes, which can be used under different pressure conditions in the specimen chamber of the electron microscope, designed for the detection of both electrons and light. For this purpose, the detector has a photodetector and a scintillator of a material transmissive for visible light connected before the photodetector. The scintillator can be provided with a coating transparent to visible light. By the application of different potentials, the detector is suitable for the detection of electrons in high vacuum and for the detection of light with high pressures in the specimen chamber.