公开(公告)号：US20050006224A1

公开(公告)日：2005-01-13

申请号：US10695381

申请日：2003-10-28

Applicant: Jene Golovchenko ,  Derek Stein ,  Jiali Li

Inventor： Jene Golovchenko ,  Derek Stein ,  Jiali Li

IPC: B01L3/00 ,  B81B1/00 ,  B81C1/00 ,  B81C99/00 ,  G01N27/28 ,  G01N27/416 ,  H01L21/66 ,  C23C14/00 ,  C23C14/32

CPC classification number: B81C1/00626 ,  B01L3/5027 ,  B24B37/013 ,  B81C99/004 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

Abstract translation: 为了控制固态结构特征的物理尺寸，提供具有表面并具有结构特征的固态结构。 该结构暴露于具有第一曝光占空比的第一周期性通量的离子，其特征在于第一占空比的第一离子曝光持续时间和第一非曝光持续时间，然后在具有第二曝光占空比的第二周期通量的离子 其特征在于，对于所述第二占空比，所述第二离子曝光持续时间和第二非曝光持续时间大于所述第一非曝光持续时间，以使所述结构的材料在所述结构的结构体内包括所述结构表面在所述结构特征中的响应 到离子通量暴露基本上通过将结构的材料局部添加到特征来改变特征的至少一个物理尺寸。

公开(公告)号：US06815363B2

公开(公告)日：2004-11-09

申请号：US09927428

申请日：2001-08-09

Applicant: Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

Inventor： Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

IPC: H01L21302

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。

公开(公告)号：US06783643B2

公开(公告)日：2004-08-31

申请号：US10186105

申请日：2002-06-27

Applicant: Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

Inventor： Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

IPC: C23C1434

CPC classification number: B81C1/00626 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢   ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢   ⁢ C ⁢   ⁢ σ C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, T1 is number of adatoms created per incident ion, D is adatom diffusivity, &tgr;trap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of structure material, and &sgr;C is cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, structure material to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding structure material to the feature location.

Abstract translation: 具有表面的固体结构被提供并暴露于入射离子的通量F，条件是基于以下条件选择：其中C是结构表面处的移动吸附原子的浓度，r是向量表面位置，t是时间，T1 是每个入射离子产生的吸附原子数，D是吸附原子扩散系数，tautrap是在结构材料的结构表面缺陷特征下发生吸附原子湮灭之前的吸收原子的平均寿命，σC是被选择的入射离子特征的吸附原子湮灭的横截面 离子暴露条件。 离子曝光条件选择控制通过入射离子对结构表面的溅射，以在包括结构表面的结构内将结构材料转移到特征位置，以响应于离子通量暴露而产生基本上通过局部添加结构材料的特征 功能位置。