公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US20240124300A1

公开(公告)日：2024-04-18

申请号：US18397930

申请日：2023-12-27

Applicant: STMicroelectronics, Inc.

Inventor： Jefferson Sismundo TALLEDO

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0108 ,  B81C2201/0143 ,  B81C2201/0146

Abstract: A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.

公开(公告)号：US11845654B2

公开(公告)日：2023-12-19

申请号：US17352149

申请日：2021-06-18

Applicant: The University of British Columbia

Inventor： Edmond Cretu ,  Chang Ge

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81C2201/0105 ,  B81C2201/0133 ,  B81C2201/0143 ,  B81C2201/0181

Abstract: According to at least one embodiment, a method of fabricating a micro electro-mechanical systems (MEMS) structure is disclosed. The method involves causing an etchant to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, causing the etchant to remove the portion of the sacrificial layer involves causing a target portion of the substrate to be released from the MEMS structure. According to another embodiment, another method of fabricating a MEMS structure is disclosed. The method involves causing an etchant including water to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, the sacrificial layer and the substrate are hydrophobic.

公开(公告)号：US20230365402A1

公开(公告)日：2023-11-16

申请号：US18354012

申请日：2023-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hang Chang ,  I-Shi Wang ,  Jen-Hao Liu

IPC: B81C1/00 ,  B81C3/00

CPC classification number: B81C1/00238 ,  B81C1/00269 ,  B81C1/00888 ,  B81C3/005 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2203/035

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

公开(公告)号：US11787689B2

公开(公告)日：2023-10-17

申请号：US16630036

申请日：2018-07-04

Applicant: TDK Corporation

Inventor： Wolfgang Pahl

IPC: B81C1/00 ,  B81B7/00 ,  H04R19/04 ,  H04R31/00 ,  H04R1/04

CPC classification number: B81C1/00309 ,  B81B7/0061 ,  H04R19/04 ,  H04R31/00 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2207/012 ,  B81B2207/99 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2203/0109 ,  B81C2203/032 ,  H04R1/04 ,  H04R2201/003

Abstract: A MEMS sensor with a media access opening in its carrier board. The MEMS sensor has an integrally filter mesh closing the media access opening. The mesh can be applied in unstructured form over the whole surface of the carrier board. Then, a structuring is performed to produce preferably at the same time a perforation forming the filter mesh.

公开(公告)号：US20180240967A1

公开(公告)日：2018-08-23

申请号：US15956376

申请日：2018-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L21/311

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US10017375B2

公开(公告)日：2018-07-10

申请号：US15291142

申请日：2016-10-12

Applicant: Robert Bosch GmbH

Inventor： Frank Reichenbach ,  Till Schade ,  Jochen Reinmuth ,  Philip Kappe ,  Alexander Ilin ,  Mawuli Ametowobla ,  Julia Amthor

IPC: H01L21/76 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0035 ,  B81B2201/0235 ,  B81C1/00182 ,  B81C1/00277 ,  B81C1/00293 ,  B81C1/00325 ,  B81C1/00666 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2203/0109 ,  B81C2203/0145

Abstract: A method is provided for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or in the cap. The first pressure and/or the first chemical composition are adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or the cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for reducing local stresses occurring at a sealed access opening.

公开(公告)号：US09975761B2

公开(公告)日：2018-05-22

申请号：US15444086

申请日：2017-02-27

Applicant: SMARTTIP BV

Inventor： Edin Sarajlic

IPC: B81C1/00 ,  A61B5/15

CPC classification number: B81C1/0015 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150396 ,  A61B5/150511 ,  A61B5/150519 ,  A61B5/150984 ,  A61B5/15142 ,  A61M37/0015 ,  B81B2201/057 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00111 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  C01B21/0687

Abstract: A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

公开(公告)号：US20180130728A1

公开(公告)日：2018-05-10

申请号：US15791152

申请日：2017-10-23

Applicant: SEIKO EPSON CORPORATION

Inventor： Kazuhiro GOMI

IPC: H01L23/498 ,  H01L21/768 ,  B41J2/16 ,  B81C1/00 ,  H01L21/268 ,  H01L21/306

CPC classification number: H01L23/49827 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1645 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/268 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam.

公开(公告)号：US09963340B2

公开(公告)日：2018-05-08

申请号：US14958372

申请日：2015-12-03

Applicant: Honeywell International Inc.

Inventor： Gregory C. Brown

IPC: B81B3/00 ,  G01L9/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/0118 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055 ,  G01L19/0618

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.