公开(公告)号：US06815363B2

公开(公告)日：2004-11-09

申请号：US09927428

申请日：2001-08-09

Applicant: Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

Inventor： Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

IPC: H01L21302

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。

公开(公告)号：US5214685A

公开(公告)日：1993-05-25

申请号：US772906

申请日：1991-10-08

Applicant: Malcolm R. Howells

Inventor： Malcolm R. Howells

IPC: G03F7/20 ,  G21K1/06

CPC classification number: G03F7/70075 ,  G21K1/06

Abstract: A polished aspheric mirror focusses a fan X-ray beam from a point source onto a work piece as a straight image line. The work piece can be efficiently exposed to the X-ray beam by simply tilting the aspheric mirror about a rotational axis, causing the focused image line to sweep across the workpiece. The aspheric mirror is designed to collimate the beam in one direction, e.g., the horizontal direction, and focus the beam in the other direction, e.g., the vertical direction, thereby creating the focused image line at the workpiece. This process is achieved by representing the mirror surface as at least a fourth order Maclaurin series polynomial, and by adjusting the coefficients of such Maclaurin series to create and maintain the desired straight image line. The mirror surface is then polished using computer controlled polishing techniques to realize the designed shape.

Abstract translation: 抛光的非球面镜将来自点光源的风扇X射线束聚焦到工件上作为直线图像线。 通过简单地围绕旋转轴倾斜非球面反射镜，使得聚焦图像线扫过工件，工件可以有效地暴露于X射线束。 非球面镜被设计成在一个方向（例如水平方向）上准直光束，并将光束在另一个方向（例如垂直方向）上聚焦，从而在工件处产生聚焦图像线。 该过程通过将镜面表示为至少第四阶Maclaurin系列多项式，并通过调整这样的Maclaurin系列的系数来创建和维持期望的直线图像线来实现。 然后使用计算机控制的抛光技术对镜面进行抛光，以实现设计的形状。

公开(公告)号：US5455850A

公开(公告)日：1995-10-03

申请号：US786265

申请日：1991-11-01

Applicant: Malcolm R. Howells ,  Chris Jacobsen

Inventor： Malcolm R. Howells ,  Chris Jacobsen

IPC: G03F7/20 ,  G03H5/00 ,  G21K1/06 ,  G21K5/00

CPC classification number: G03F7/70408 ,  G03H5/00 ,  G21K1/06 ,  G03H2001/0094

Abstract: A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

Abstract translation: 一种非接触式X射线投影光刻方法，用于在诸如晶片上的光致抗蚀剂材料的X射线敏感材料的选定表面上产生期望的X射线图像，所希望的具有图像最小线宽的X射线图像为 小至0.063亩，甚至更小。 确定全息图及其位置，当全息图被来自所选波长λ的适当单色X射线源的X射线照射时，将在所选择的表面上产生期望的图像。 这里可以使用通过全息图进行的轴上X射线透射或离轴X射线反射，对于X射线源的单色度，通量和亮度有非常不同的要求。 为了通过由X射线源产生的X射线合理地穿透光致抗蚀剂材料，在一个实施例中，波长X优选地被选择为不超过13.5nm，更优选地在另一个实施例中选择在1-5nm的范围内 实施例。 线宽的下限由可用的微结构写入装置（例如电子束）的线宽设定。