Abstract:
A circular cylinder-shaped mask is used to form an image of a pattern on a substrate via a projection optical system. The mask has a pattern formation surface on which the pattern is formed and that is placed around a predetermined axis, and the mask is able to rotate, with the predetermined axis taken as an axis of rotation, in synchronization with a movement of the substrate in at least a predetermined one-dimensional direction. When a diameter of the mask on the pattern formation surface is taken as D, and a maximum length of the substrate in the one-dimensional direction is taken as L, and a projection ratio of the projection optical system is taken as β, and circumference ratio is taken as π, then the conditions for D≧(β×L)/π are satisfied.
Abstract:
An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.
Abstract:
An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.
Abstract:
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Abstract:
To provide a display device which can be manufactured with higher efficiency in the use of material through a simplified manufacturing process, and a method for manufacturing the display device. Another object is to provide a technique by which patterns of a wiring the like which constitutes the display device can be formed to a desired shape with good control. In a method for forming a pattern according to the present invention, a mask is formed over a light-transmitting substrate; a first region including a photocatalyst is formed over the substrate and the mask; the photocatalyst is irradiated with light through the substrate to modify a part of the first region; a second region is formed; and a composition containing a pattern forming material is discharged to the second region, thus, a pattern is formed. The mask does not transmit light.
Abstract:
An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.
Abstract:
An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.
Abstract:
An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.
Abstract:
An exposure method of exposing a mask pattern having linear features in orthogonal first and second directions onto an object including the steps of disposing a diffraction optical element that diffracts light in different directions from an optical axis of the illumination optical system between the light source and an optical integrator in the illumination optical system; distributing the diffracted light at regions apart from the optical axis on a predetermined plane substantially conjugate with a pupil plane of the projection optical system to form on the predetermined plane an intensity distribution having increased intensity portions relative to a portion on first and second axes defined to intersect each other at the optical axis along the first and second directions; and projecting the illuminated pattern having the intensity distribution onto the object.
Abstract:
A method and apparatus for transferring a fine pattern (12) on a mask (11) onto a substrate (17) by a projection exposure apparatus including an illumination optical system (1-10) for irradiating an illuminating light on the mask (11), and a projection optical system (13) for projecting an image of the fine pattern (12) on the illuminated mask onto the substrate (17). The illuminating light is irradiated at least in the form of a pair of light beams opposedly inclined with respect to the mask through a pair of transparent windows (6a, 6b) of a spatial filter (6) whereby either one of the ±first-order diffracted beams and the 0-order diffracted beam produced from the fine pattern (12) of the mask (11) illuminated by each light beam are respectively passed apart by the equal distance from the optical axis of the projection optical system at or near to the Fourier transform plane within the projection optical system with respect to the fine pattern (12) of the mask (11), thereby forming on the substrate (17) a high-resolution projected image of a strong light-and-dark contrast with a high degree of focus depth.