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    Vacuum processing apparatus for substate wafers
    181.
    发明授权
    Vacuum processing apparatus for substate wafers 失效
    用于子晶片的真空处理设备

    公开(公告)号：US5784799A

    公开(公告)日：1998-07-28

    申请号：US882731

    申请日：1997-06-26

    Applicant: Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

    Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

    IPC: B01J3/00 ,  B41J2/36 ,  B41J2/365 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677 ,  F26B13/30

    CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

    Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

    Abstract translation: 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

    Vacuum system for controlling pressure in a polyester process
    185.
    发明授权
    Vacuum system for controlling pressure in a polyester process 失效
    用于控制聚酯工艺压力的真空系统

    公开(公告)号：US5753190A

    公开(公告)日：1998-05-19

    申请号：US505428

    申请日：1995-07-21

    Applicant: Douglas M. Haseltine ,  Thomas L. Yount ,  Jimmy L. Ryans

    Inventor： Douglas M. Haseltine ,  Thomas L. Yount ,  Jimmy L. Ryans

    IPC: B01J3/00 ,  C08F2/00 ,  C08G63/78

    CPC classification number: B01J3/006 ,  C08G63/785

    Abstract: The present invention discloses a polymerization system having at least two reaction chambers wherein vacuum is used to remove vapors therefrom comprising a single vacuum system for supplying vacuum in increasing amounts to successive reaction chambers. Also disclosed is a polymerization process having at least first and second reaction chambers in which the pressure is decreased successively from said first chamber to a final chamber.

    Abstract translation: 本发明公开了一种具有至少两个反应室的聚合系统，其中使用真空来除去其中的蒸气，其中包括单个真空系统，用于以递增的量向连续的反应室提供真空。 还公开了一种具有至少第一和第二反应室的聚合方法，其中压力从所述第一室连续地降低到最终室。

    CVD apparatus and method
    189.
    发明授权
    CVD apparatus and method 失效
    CVD装置和方法

    公开(公告)号：US5407704A

    公开(公告)日：1995-04-18

    申请号：US112101

    申请日：1993-08-26

    Applicant: William C. Basta ,  David C. Punola ,  Daniel L. Near ,  Jeffery S. Smith

    Inventor： William C. Basta ,  David C. Punola ,  Daniel L. Near ,  Jeffery S. Smith

    IPC: B01J3/00 ,  B01J19/32 ,  C23C16/44 ,  C23C16/00

    CPC classification number: B01J19/32 ,  B01J3/006 ,  C23C16/4412 ,  B01J2219/3221 ,  B01J2219/32213 ,  B01J2219/32231 ,  B01J2219/32237 ,  B01J2219/32408 ,  Y10S165/913

    Abstract: Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom. An enclosure is disposed around the condensing structure and configured to direct the spent gas stream from the coating region to flow through the condensing structure where the excess, unreacted gaseous reactant can condense before entering the outlet.

    Abstract translation: 化学气相沉积设备包括一个反应器，该反应器具有一个具有用于涂覆基底的涂层区域和与该涂层区域连通的排气区域的腔室。 涂覆区域包括用于引入气态反应物流以通过基底以与其反应以在其上形成涂层和废气流的入口。 排气区域包括用于从涂覆区域排出废气流的出口。 衬底被支撑在涂覆区域中，并通过合适的支撑装置和加热装置加热到升高的反应温度。 冷凝组件设置在排气区域中，用于在进入出口之前将来自废气流的过量未反应的气体反应物冷凝。 冷凝组件包括设置在排气区域中的高表面积，有孔结构，其中废气流的温度被充分还原以从其中冷凝过量的未反应的气态反应物。 外壳围绕冷凝结构设置并且被配置为引导来自涂覆区域的废气流流过冷凝结构，其中过量的未反应的气态反应物可在进入出口之前冷凝。

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