Sb-Te Alloy Sintered Compact Sputtering Target
    190.
    发明申请
    Sb-Te Alloy Sintered Compact Sputtering Target 有权
    Sb-Te合金烧结紧凑型溅射靶

    公开(公告)号:US20070297938A1

    公开(公告)日:2007-12-27

    申请号:US11719967

    申请日:2005-09-30

    Abstract: Provided is an Sb—Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 μm or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, and average crystal grain size is 50 μm or less. With this Sb—Te alloy sintered compact sputtering target, the density of defects having a maximum length of 10 μm or greater arising in a surface finish by machining is 80 or less in an 800 μm square. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.

    Abstract translation: 提供一种Sb-Te合金烧结体型溅射靶,其具有Sb或Te为主要成分,表面粗糙度Ra为0.4μm以下,除气体成分以外的纯度为4N以上,作为杂质的气体成分含量为1500ppm 以下,平均结晶粒径为50μm以下。 对于该Sb-Te合金烧结体型溅射靶,通过机械加工而产生的最大长度为10μm以上的缺陷的密度为800μm以下,为80以下。 因此,Sb-Te合金溅射靶结构可以均匀化和精制,可以抑制烧结靶中的裂纹的产生,并且可以抑制溅射期间的电弧放电。 此外,为了获得高品质的Sb-Te合金溅射靶,可以减少由溅射侵蚀引起的表面粗糙度。

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