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    Robust high aspect ratio semiconductor device
    181.
    发明授权
    Robust high aspect ratio semiconductor device 有权
    坚固的高纵横比半导体器件

    公开(公告)号：US08809982B2

    公开(公告)日：2014-08-19

    申请号：US13121268

    申请日：2009-09-24

    Applicant: Freddy Roozeboom ,  Martijn Goossens ,  Willem Frederik Adrianus Besling ,  Nynke Verhaegh

    Inventor： Freddy Roozeboom ,  Martijn Goossens ,  Willem Frederik Adrianus Besling ,  Nynke Verhaegh

    IPC: H01L27/14 ,  B81B3/00 ,  B81C1/00 ,  H01L29/41 ,  H01L49/02

    CPC classification number: H01L29/41 ,  B81B3/007 ,  B81B2201/06 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L28/91

    Abstract: The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

    Abstract translation: 本发明涉及一种半导体器件，其包括第一表面和布置在第一表面上的相邻的第一和第二电气元件，其中第一和第二元件中的每一个元件在第一方向上从第一表面延伸，第一元件具有 基本上垂直于第一方向的横截面和至少部分地沿第一方向延伸的侧壁表面，其中侧壁表面包括沿着基本上平行于第一方向延伸的线邻接第一部分的第一部分和第二部分，其中， 第一和第二部分相对于彼此以一定角度放置以提供内角，其中内角处的侧壁表面至少部分地布置成距离第二元件的面对部分恒定的距离R，以提供 机械加强结构在内角。

    Control over hydrogen fluoride levels in oxide etchant
    182.
    发明授权
    Control over hydrogen fluoride levels in oxide etchant 有权
    控制氧化物腐蚀剂中的氟化氢水平

    公开(公告)号：US08716028B2

    公开(公告)日：2014-05-06

    申请号：US13731296

    申请日：2012-12-31

    Applicant: Amy Tseng ,  Brian V. Jenkins ,  Robert M. Mack

    Inventor： Amy Tseng ,  Brian V. Jenkins ,  Robert M. Mack

    IPC: G01N21/75

    CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

    Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

    Abstract translation: 本发明涉及用于鉴定缓冲氧化物蚀刻组合物中氢氟酸的量的方法和组合物。 在缓冲氧化物蚀刻组合物中，非常难以测量氢氟酸的量，因为其具有不同的平衡，并且它是有毒的，因此难以处理和取样。 然而，当用于制造微芯片时，不正确量的氢氟酸会破坏这些芯片。 当与添加的显色剂接触时，本发明利用光谱测量氢氟酸的独特方法，以获得准确，立即和安全的精确测量。

    PROCESSING METHOD UTILIZING CLUSTER
    184.
    发明申请
    PROCESSING METHOD UTILIZING CLUSTER 审中-公开
    处理方法利用集群

    公开(公告)号：US20140061031A1

    公开(公告)日：2014-03-06

    申请号：US13778555

    申请日：2013-02-27

    Applicant: IWATANI CORPORATION ,  KYOTO UNIVERSITY

    Inventor： Yu YOSHINO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Jiro MATSUO ,  Toshio SEKI

    IPC: C23F1/00

    CPC classification number: C23F1/00 ,  B81C1/00531 ,  B81C2201/0132 ,  H01L21/02046 ,  H01L21/3065

    Abstract: A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.

    Abstract translation: 提供了一种在低流速下具有优异的加工性能的加工方法。 用于处理样品表面的方法使用通过从喷嘴喷射到真空处理室中的气体混合物的绝热膨胀产生的反应性簇。 气体混合物包含反应性气体三氟化氯，第一惰性气体氩气和第二惰性气体氙气。 喷嘴入口中的气体混合物的压力为0.4MPa（abs）以上。 反应气体占3体积％以上且10体积％以下。 第一惰性气体占40体积％以上且94体积％以下。 第二惰性气体构成气体混合物的3体积％以上且50体积％以下。

    MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME USING HARD MASK RESISTANT TO STRUCTURE RELEASE ETCH
    187.
    发明申请
    MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME USING HARD MASK RESISTANT TO STRUCTURE RELEASE ETCH 有权
    微生物装置和使用硬掩模抗结构释放蚀刻的相同方法

    公开(公告)号：US20130146948A1

    公开(公告)日：2013-06-13

    申请号：US13624307

    申请日：2012-09-21

    Applicant: International Business Machines Corporation

    Inventor： Michael A. Guillorn ,  Fei Liu ,  Ying Zhang

    IPC: H01L29/84

    CPC classification number: B81C1/00396 ,  B81B2201/018 ,  B81B2207/015 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0132 ,  H01H1/0036 ,  H01H1/0094

    Abstract: A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure.

    Abstract translation: 一种结构包括设置在设置在基板上的掩埋氧化物层上的硅层; 至少一个晶体管器件形成在硅层上或硅层中，所述至少一个晶体管具有金属化; 所述硅层的释放区域设置在所述掩埋氧化物层中的空腔上方; 覆盖所述硅层和所述至少一个晶体管器件的后端（BEOL）电介质膜堆叠; 覆盖在BEOL电介质膜叠层上的氮化物层; 形成为覆盖氮化物层的氧化铪层的硬掩模; 以及通过氧化铪层，氮化物层和BEOL电介质膜叠层形成的开口，以暴露位于掩埋氧化物层中的空腔上方的硅层的释放区域。 在MEMS / NEMS HF蒸汽释放过程中，硬掩模保护底层材料。

    SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING
    190.
    发明申请
    SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING 有权
    硅锗锗掩模深层硅蚀刻

    公开(公告)号：US20120225557A1

    公开(公告)日：2012-09-06

    申请号：US13409868

    申请日：2012-03-01

    Applicant: Mohamed Serry ,  Andrew Rubin ,  Mohamed Refaat ,  Sherif Sedky ,  Mohammad Abdo

    Inventor： Mohamed Serry ,  Andrew Rubin ,  Mohamed Refaat ,  Sherif Sedky ,  Mohammad Abdo

    IPC: H01L21/311

    CPC classification number: H01L21/3081 ,  B81C1/00396 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/76898

    Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from −80 degrees Celsius to −140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

    Abstract translation: 在SF6 / O2等离子体的低温深反应离子蚀刻中，多晶硅锗（SiGe）可以提供优异的硅蚀刻选择性。 在-80摄氏度至-140摄氏度的蚀刻温度下，可获得超过800：1（Si：SiGe）的蚀刻选择性。 可以使用SiGe作为用于构建微机电系统（MEMS）器件和半导体器件的硬掩模层来将具有高分辨率的高纵横比结构图案化为Si衬底。

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