Method for forming thin film capacitors
    183.
    发明授权
    Method for forming thin film capacitors 失效
    薄膜电容器的形成方法

    公开(公告)号:US5912044A

    公开(公告)日:1999-06-15

    申请号:US782205

    申请日:1997-01-10

    Abstract: Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.

    Abstract translation: 薄膜电容器通过多级干法处理方法形成,其包括通过电容器的电介质和金属电极层的同时烧蚀通孔。 优选地,电介质膜由钛酸钡锶形成,并且金属电极层由铂形成。 本发明克服了与使用强蚀刻剂顺序地通过电极和电介质层形成单独的通路孔相关的问题,防止在湿蚀刻期间各层分层的可能性以及蚀刻溶液对衬底材料的可能不期望的影响。

    Masking process with constricted flow path for coating
    190.
    发明授权
    Masking process with constricted flow path for coating 失效
    掩蔽过程与狭窄的流动路径用于涂层

    公开(公告)号:US3895135A

    公开(公告)日:1975-07-15

    申请号:US35621373

    申请日:1973-05-01

    Inventor: HOFER PETER H

    CPC classification number: H05K3/284 H01L49/02 H05K2201/0179

    Abstract: A masking process, during the vapor deposition coating of a partially masked substrate with a condensible vaporous precursor of a coating material, which comprises causing the vaporous precursor to flow through a constricted flow path at the masked/unmasked interface during the coating process so as to provide a relatively thin coating at the end of the flow path which can be used as a tear line for removing the coating masking means along such interface.

    Abstract translation: 在具有可涂覆材料的可冷凝蒸气前体的部分掩蔽的基底的气相沉积涂覆期间的掩模工艺,其包括在涂覆过程期间使蒸气前体在掩蔽/未掩蔽的界面处流过狭窄的流动路径,以便 在流动路径的末端提供相对薄的涂层,其可以用作沿着这种界面去除涂层掩蔽装置的撕裂线。

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