Resin composition, method for forming cured product, and cured product

    公开(公告)号:US11905388B2

    公开(公告)日:2024-02-20

    申请号:US17632685

    申请日:2020-08-11

    CPC classification number: C08K3/08 C08G59/1488

    Abstract: The present invention provides a resin composition that contains copper particles and a particular resin and that is capable of producing a cured product having a low volume resistance value, and a cured product obtained by curing the resin composition. The resin composition contains (A) copper particles having an average particle diameter of 0.1 to 20 μm, (B) a phosphoric acid-modified epoxy resin obtained by reacting a phosphoric acid (b1) with an epoxy compound (b2), and (C) a curing agent, wherein the content of the component (B) and the content of the component (C), based on 100 parts by mass of the total amount of the components (A) to (C), are 0.1 to 30 parts by mass and 0.1 to 5 parts by mass, respectively. Further, the cured product is obtained by curing the resin composition.

    ETCHING METHOD
    15.
    发明公开
    ETCHING METHOD 审中-公开

    公开(公告)号:US20240030037A1

    公开(公告)日:2024-01-25

    申请号:US18023158

    申请日:2021-08-23

    CPC classification number: H01L21/31122

    Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

    METHOD OF PRODUCING THIN-FILM
    17.
    发明公开

    公开(公告)号:US20240018654A1

    公开(公告)日:2024-01-18

    申请号:US18036975

    申请日:2021-11-16

    CPC classification number: C23C16/45553 C23C16/405

    Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:




    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

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