中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.022 seconds)

    Method for improved metrology by protecting photoresist profiles
    11.
    发明授权
    Method for improved metrology by protecting photoresist profiles 有权
    通过保护光刻胶轮廓改进计量的方法

    公开(公告)号：US07374956B2

    公开(公告)日：2008-05-20

    申请号：US10202956

    申请日：2002-07-25

    Applicant: Shyeu Sheng Lu ,  Hong Yuan Chu ,  Kuei Shun Chen ,  Hua Tai Lin

    Inventor： Shyeu Sheng Lu ,  Hong Yuan Chu ,  Kuei Shun Chen ,  Hua Tai Lin

    IPC: G01R31/26

    CPC classification number: H01L22/34

    Abstract: A method for preserving semiconductor feature opening profiles for metrology examination including providing semiconductor wafer having a process surface comprising semiconductor feature openings; blanket depositing over the semiconductor feature openings to substantially fill the semiconductor feature openings at least one layer of material comprising silicon oxide; and, preparing a portion of the semiconductor wafer in cross sectional layout for metrology examination.

    Abstract translation: 一种用于保存用于度量检查的半导体特征开口轮廓的方法，包括提供具有包括半导体特征开口的工艺表面的半导体晶片; 在半导体特征开口上的覆盖层沉积，以基本上填充半导体特征开口至少一层包含氧化硅的材料; 并且制备半导体晶片的一部分用于计量检查的横截面布局。

    Method and apparatus for reducing spin-induced wafer charging
    12.
    发明申请
    Method and apparatus for reducing spin-induced wafer charging 审中-公开
    减少自旋晶片充电的方法和装置

    公开(公告)号：US20060000109A1

    公开(公告)日：2006-01-05

    申请号：US10884714

    申请日：2004-07-03

    Applicant: Hua-Tai Lin ,  Shih-Che Wang ,  Louie Liu ,  Chi-Hung Liao ,  Yi-Ming Dai

    Inventor： Hua-Tai Lin ,  Shih-Che Wang ,  Louie Liu ,  Chi-Hung Liao ,  Yi-Ming Dai

    IPC: C23G1/02 ,  F26B5/08 ,  F26B17/24

    CPC classification number: H01L21/67051 ,  B08B3/10 ,  H01L21/67028 ,  H01L21/67034

    Abstract: A novel method and apparatus for reducing or eliminating electrostatic charging of wafers during a spin-dry step of wafer cleaning is disclosed. The method includes rinsing a wafer, typically by dispensing a cleaning liquid such as deionized water on the wafer while spinning the wafer; and spin-drying the wafer by sequentially rotating the wafer in opposite directions. The apparatus includes a wafer support platform that is capable of sequentially rotating a wafer in opposite directions to spin-dry the wafer.

    Abstract translation: 公开了一种在晶片清洗的旋转干燥步骤中减少或消除晶片的静电充电的新型方法和装置。 该方法包括冲洗晶片，通常通过在旋转晶片的同时在晶片上分配诸如去离子水的清洁液体; 并通过沿相反方向顺序旋转晶片来旋转晶片。 该装置包括能够沿相反方向顺序旋转晶片以旋转晶片的晶片支撑平台。

    Photoresist materials and photolithography processes
    14.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC: G03B27/52 ,  G03B27/42

    CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    Abstract translation: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    Optical proximity correction convergence control
    15.
    发明授权
    Optical proximity correction convergence control 有权
    光学接近校正收敛控制

    公开(公告)号：US08656319B2

    公开(公告)日：2014-02-18

    申请号：US13368919

    申请日：2012-02-08

    Applicant: Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    Inventor： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    IPC: G06F17/50

    CPC classification number: G03F7/70441 ,  G03F7/70125

    Abstract: A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

    Abstract translation: 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查第一OPC设置以获得相对较小的EPE，MEEF和DOM与限定的门间距的第一模板的一致性。

    Cell phone
    16.
    外观设计
    Cell phone 有权

    公开(公告)号：USD676404S1

    公开(公告)日：2013-02-19

    申请号：US29419137

    申请日：2012-04-25

    Applicant: Hua-Tai Lin

    Designer： Hua-Tai Lin

    SUB-RESOLUTION ASSIST FEATURE OF A PHOTOMASK
    20.
    发明申请
    SUB-RESOLUTION ASSIST FEATURE OF A PHOTOMASK 审中-公开
    照片的分辨率辅助功能

    公开(公告)号：US20090258302A1

    公开(公告)日：2009-10-15

    申请号：US12100907

    申请日：2008-04-10

    Applicant: Jeng-Shiun Ho ,  Jun-Hua Chen ,  Luke Lo ,  Louis Lin ,  Bing-Syun Yeh ,  Cheng-Cheng Kuo ,  Hua-Tai Lin

    Inventor： Jeng-Shiun Ho ,  Jun-Hua Chen ,  Luke Lo ,  Louis Lin ,  Bing-Syun Yeh ,  Cheng-Cheng Kuo ,  Hua-Tai Lin

    IPC: G03F1/00 ,  G06F17/50

    CPC classification number: G03F1/36

    Abstract: A photomask including a main feature, corresponding to an integrated circuit feature, and a sub-resolution assist feature (SRAF) is provided. A first imaginary line tangential with a first edge of the main feature and a second imaginary line tangential with the second edge of the main feature define an area adjacent the main feature. A center point of the SRAF lies within this area. The SRAF may be a symmetrical feature. In an embodiment, the center point of the SRAF lies on an imaginary line extending at approximately 45-degree angle from a corner of a main feature.

    Abstract translation: 提供了包括对应于集成电路特征的主要特征的光掩模和子分辨率辅助特征（SRAF）。 与主要特征的第一边缘切线的第一虚拟线和与主要特征的第二边缘相切的第二假想线切线限定与主要特征相邻的区域。 SRAF的中心位于该区域内。 SRAF可以是对称的特征。 在一个实施例中，SRAF的中心点位于从主要特征的角度以大约45度角延伸的假想线上。

Patent Agency Ranking