Abstract:
A focal plane staring sensor is provided that includes an M×N sensor, where M is a number of rows of sensor pixels in the sensor and N is a number of columns of sensor pixels in the sensor, where M and N are integers greater than one. A control circuit samples a sensor pixel value for each sensor pixel of the M×N sensor at a plurality of different integration times corresponding to an amount of time that a photonic charge can be acquired in each sensor pixel of the M×N sensor, wherein the control circuit selects one sample from a set of samples to generate a scaled value to facilitate an equalization of a signal to noise ratio between the sensor pixels.
Abstract:
The present invention provides a spectral filter for an optical sensor. The spectral filter includes a substrate having a focus region and a defocus region, a panchromatic filter region disposed on the focus region of the substrate and a multi-spectral filter region disposed on the defocus region of the substrate. The panchromatic filter region includes a plurality of panchromatic pixels, while the multi-spectral filter region includes a plurality of multi-spectral pixels. Each of the multi-spectral pixels includes a plurality of color pixels.
Abstract:
A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 .mu.m which are made to look smaller than their physical size by the use of dielectric filler material in the gaps. The dielectric filler material has a relatively high dielectric constant which is relatively large for the clock frequencies utilized but may be relatively low for optical frequencies. The dielectric constant of the dielectric filler material is typically greater than 20 and is selected from materials such as tantalum oxide, zirconium oxide, barium titanate and barium strontium titanate.
Abstract:
An infrared (IR) imaging device includes substantially identical top and bottom IR detector arrays. In separate embodiments, either a top or bottom surface of the top array is stacked onto the bottom array to confront a top surface of the bottom array and so that individual detector elements and subarrays of the top array are aligned with corresponding detector elements and subarrays of the bottom array. The image readout circuits of both the top and bottom array are connected by wire bonding to readout control circuits formed in the peripheral region of the wafer in which the bottom array is formed.
Abstract:
A pseudo uniphase CCD array having four functional regions, a clocked barrier region, a clocked well region, a virtual barrier region, and a gate variable potential well region per stage. The described structure allows flexibility in setting operating voltages and avoids the breakdown and fabrication difficulties of a virtual well region. The device employs a virtual barrier plus adjacent MOS well fixed potential region and uses clocking of barrier and well regions to achieve charge transfer. A fabrication sequence and operating potential selection criteria are also included.
Abstract:
A CCD gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any re-entrant oxide steps.