公开(公告)号：US20080105646A1

公开(公告)日：2008-05-08

申请号：US11928061

申请日：2007-10-30

Applicant: Adam Cohen ,  Michael Lockard ,  Dale McPherson

Inventor： Adam Cohen ,  Michael Lockard ,  Dale McPherson

IPC: C23F1/00 ,  C25D5/10

CPC classification number: C23C18/1689 ,  B33Y10/00 ,  B81C1/0019 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G03F7/00

Abstract: Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Abstract translation: 多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜） 结构体。 在结构形成之后，通过多级蚀刻操作去除牺牲材料。 在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。 多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。 障碍物可以通过与结构材料或基底接触而固定就位，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。

公开(公告)号：US20080105558A1

公开(公告)日：2008-05-08

申请号：US11927680

申请日：2007-10-30

Applicant: Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

Inventor： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC: C25D5/10

CPC classification number: B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

Abstract: In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

Abstract translation: 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20070045121A1

公开(公告)日：2007-03-01

申请号：US11435809

申请日：2006-05-16

Applicant: Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

Inventor： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC: C25D5/02

CPC classification number: B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

Abstract: In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

Abstract translation: 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20050199583A1

公开(公告)日：2005-09-15

申请号：US11029218

申请日：2005-01-03

Applicant: Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

Inventor： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC classification number: C25D1/003 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/1653 ,  C25D5/022 ,  C25D5/10

Abstract: Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050173374A1

公开(公告)日：2005-08-11

申请号：US11029014

申请日：2005-01-03

Applicant: Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

Inventor： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23C18/16 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  H01L21/288 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: B44C1/22 ,  B33Y10/00 ,  B81C1/00492 ,  C03C15/00 ,  C03C25/68 ,  C23C18/1605 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/405 ,  C23F1/00 ,  C25D1/003 ,  C25D5/02 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/76885

Abstract: Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050045585A1

公开(公告)日：2005-03-03

申请号：US10841382

申请日：2004-05-07

Applicant: Gang Zhang ,  Adam Cohen ,  Michael Lockard ,  Ananda Kumar ,  Ezekiel Kruglick ,  Kieun Kim

Inventor： Gang Zhang ,  Adam Cohen ,  Michael Lockard ,  Ananda Kumar ,  Ezekiel Kruglick ,  Kieun Kim

IPC: C25D1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/12 ,  C25D5/14 ,  C25D5/18 ,  C25D5/34 ,  C25D5/40 ,  C25D5/48 ,  C25D5/50 ,  H01L21/288 ,  H01L21/768 ,  H05K3/24 ,  C23F1/00

CPC classification number: C25D5/50 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D5/12 ,  C25D5/14 ,  C25D5/18 ,  C25D5/34 ,  C25D5/40 ,  C25D5/48 ,  H01L21/2885 ,  H01L21/76879 ,  H05K3/241 ,  H05K3/243

Abstract: Multi-layer microscale or mesoscale structures are fabricated with adhered layers (e.g. layers that are bonded together upon deposition of successive layers to previous layers) and are then subjected to a heat treatment operation that enhances the interlayer adhesion significantly. The heat treatment operation is believed to result in diffusion of material across the layer boundaries and associated enhancement in adhesion (i.e. diffusion bonding). Interlayer adhesion and maybe intra-layer cohesion may be enhanced by heat treating in the presence of a reducing atmosphere that may help remove weaker oxides from surfaces or even from internal portions of layers.

公开(公告)号：US20070199825A1

公开(公告)日：2007-08-30

申请号：US11668955

申请日：2007-01-30

Applicant: Adam Cohen ,  Michael Lockard ,  Dennis Smalley

Inventor： Adam Cohen ,  Michael Lockard ,  Dennis Smalley

IPC: C25D5/02

CPC classification number: C25D5/02 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  H01P11/006

Abstract: Disclosed methods reduce the discontinuities that between individual layers of a structure that is formed at least in part using electrochemical fabrication techniques. Discontinuities may exist between layers of a structure as a result of up-facing or down-facing regions defined in data descriptive of the structure or they may exist as a result of building limitations, e.g., those that result in non-parallel orientation between a building axis and sidewall surfaces of layers. Methods for reducing discontinuities may be applied to all regions or only to selected regions of the structure. Methods may be tailored to improve the accuracy between an original design of the structure and the structure as fabricated or they may simply be used to smooth the discontinuities between layers. Methods may include deposition operations that selectively favor filling of the discontinuities and/or etching operations that selectively favor removal of material from protrusions that define discontinuities.

Abstract translation: 公开的方法减少了使用电化学制造技术至少部分形成的结构的各个层之间的不连续性。 结构的层之间可能存在不连续性，这是由于在描述结构的数据中定义的面向上或向下的区域的结果，或者它们可能由于构建限制而存在，例如导致在 建筑轴线和层的侧壁表面。 用于减少不连续性的方法可以应用于所有区域或仅应用于结构的选定区域。 可以调整方法以提高结构的原始设计和所制造的结构之间的精度，或者可以简单地用于平滑层之间的不连续性。 方法可以包括选择性地有利于填充不连续性和/或蚀刻操作的沉积操作，其选择性地有利于从限定不连续性的突起中去除材料。

公开(公告)号：US20070158200A1

公开(公告)日：2007-07-12

申请号：US11478934

申请日：2006-06-29

Applicant: Adam Cohen ,  Michael Lockard ,  Gang Zhang

Inventor： Adam Cohen ,  Michael Lockard ,  Gang Zhang

IPC: C25D5/00 ,  B01J19/08

CPC classification number: C25D5/00 ,  B33Y10/00 ,  B81C99/0095 ,  B81C2201/0181 ,  C23C4/02 ,  C23C18/1605 ,  C23C18/1651 ,  C23C26/00 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  C25D1/003

Abstract: Embodiments are directed to electrochemically fabricating multi-layer three dimensional structures where each layer comprises at least one structural and at least one sacrificial material and wherein at least some metals or alloys are electrodeposited during the formation of some layers and at least some metals are deposited during the formation of some layers that are either difficult to electrodeposit and/or are difficult to electrodeposit onto. In some embodiments, the hard to electrodeposit metals (e.g. Ti, NiTi, W, Ta, Mo, etc.) may be deposited via chemical or physical vacuum deposition techniques while other techniques are used in other embodiments. In some embodiments, prior to electrodepositing metals, the surface of the previously formed layer is made to undergo appropriate preparation for receiving an electrodeposited material. Various surface preparation techniques are possible, including, for example, anodic activation, cathodic activation, and vacuum deposition of a seed layer and possibly an adhesion layer.

Abstract translation: 实施例涉及电化学制造多层三维结构，其中每层包括至少一种结构和至少一种牺牲材料，并且其中至少一些金属或合金在形成一些层期间被电沉积，并且至少一些金属在 形成难以电沉积和/或难以电沉积的一些层。 在一些实施方案中，可以通过化学或物理真空沉积技术沉积难以电沉积的金属（例如Ti，NiTi，W，Ta，Mo等），而在其它实施方案中使用其它技术。 在一些实施方案中，在电沉积金属之前，使先前形成的层的表面经历适当的准备以接收电沉积材料。 各种表面处理技术是可能的，包括例如阳极活化，阴极活化和种子层以及可能的粘附层的真空沉积。

公开(公告)号：US20070015367A1

公开(公告)日：2007-01-18

申请号：US11523206

申请日：2006-09-19

Applicant: Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

Inventor： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC: H01L21/311

CPC classification number: H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

Abstract: A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

Abstract translation: 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20060226015A1

公开(公告)日：2006-10-12

申请号：US11325405

申请日：2006-01-03

Applicant: Dennis Smalley ,  Adam Cohen ,  Ananda Kumar ,  Michael Lockard

Inventor： Dennis Smalley ,  Adam Cohen ,  Ananda Kumar ,  Michael Lockard

IPC: C25D5/02

CPC classification number: A61N1/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  C25D1/20 ,  C25D5/022 ,  G01R1/0483 ,  G01R1/06716 ,  G01R1/07357 ,  G01R31/2886 ,  H05K3/467 ,  H05K3/4682

Abstract: Electrochemical fabrication processes and apparatus for producing multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers including operations for providing coatings of dielectric material that isolate at least-portions of a first conductive material from (1) other portions of the first conductive material, (2) a second conductive material, or (3) another dielectric material, and wherein the thickness of the dielectric coatings are thin compared to the thicknesses of the layers used in forming the structures. In some preferred embodiments, portions of each individual layer are encapsulated by dielectric material while in other embodiments only boundaries between distinct regions of materials are isolated from one another by dielectric barriers.

Abstract translation: 用于生产多层结构的电化学制造方法和装置，其中每个层包括至少两种材料的沉积，并且其中形成至少一些层，包括用于提供绝缘材料的涂层的操作，所述介电材料的涂层隔离第一导电材料的至少一部分 从（1）第一导电材料的其他部分，（2）第二导电材料或（3）另一种介电材料，并且其中电介质涂层的厚度与用于形成结构的层的厚度相比较薄 。 在一些优选实施例中，每个单独层的部分被电介质材料包封，而在其它实施例中，材料的不同区域之间的边界通过电介质屏障彼此隔离。