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    Beam conducting cavity structure, gas sensor and method for production thereof
    11.
    发明授权
    Beam conducting cavity structure, gas sensor and method for production thereof 有权

    公开(公告)号：US11867617B2

    公开(公告)日：2024-01-09

    申请号：US17275104

    申请日：2019-09-02

    Applicant: OSRAM OLED GmbH

    Inventor： Farhang Ghasemi Afshar

    IPC: G01N21/3504 ,  G01N21/61 ,  G01N21/03

    CPC classification number: G01N21/3504 ,  G01N21/031 ,  G01N21/61 ,  G01N2201/0668

    Abstract: In an embodiment a beam-guiding cavity structure includes at least one first curved surface, one second curved surface and one third curved surface spanning a cavity, the first-third curved surfaces respectively having at least one first focal point and one second focal point, wherein the cavity is configured such that substantially no distance is laterally formed between the first focal point of the first curved surface and the second focal point of the second curved surface, wherein the cavity is further configured such that substantially no distance is laterally formed between the first focal point of the second curved surface and the second focal point of the third curved surface, wherein the first focal point of the second curved surface is arranged next to a connecting line of the first and second focal points of the first curved surface, wherein the first focal point of the third curved surface is arranged next to a connecting line of the first and second focal points of the second curved surface, and wherein the first, second and third curved surfaces have different shapes or dimensions to one another.

    Component with an optoelectronic part
    13.
    发明授权
    Component with an optoelectronic part 有权

    公开(公告)号：US11824147B2

    公开(公告)日：2023-11-21

    申请号：US17405906

    申请日：2021-08-18

    Applicant: OSRAM OLED GmbH

    Inventor： Claus Jäger

    IPC: H01L33/58 ,  H01L33/60 ,  G02B19/00 ,  H01L33/48

    CPC classification number: H01L33/60 ,  G02B19/0028 ,  G02B19/0052 ,  G02B19/0061 ,  H01L33/486 ,  H01L33/58

    Abstract: In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the optoelectronic part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the optoelectronic part is arranged in the part space, and wherein the frame comprises a reflector, and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the reflector is configured to direct the electromagnetic radiation onto the lens, wherein the lens is configured to direct the electromagnetic radiation of the optoelectronic part, and wherein the lens comprises at least a partial pyramidal-shaped section on a first side face facing toward the optoelectronic part.

    Semiconductor device
    17.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11735682B2

    公开(公告)日：2023-08-22

    申请号：US16754612

    申请日：2018-10-16

    Applicant: OSRAM OLED GmbH

    Inventor： Tilman Ruegheimer ,  Hubert Halbritter

    IPC: H01L31/173 ,  G01S17/04 ,  G01S7/481 ,  H01L25/16 ,  A61B5/024 ,  G06F3/01

    CPC classification number: H01L31/173 ,  G01S7/4815 ,  G01S17/04 ,  H01L25/167 ,  A61B5/02427 ,  G06F3/017

    Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

    Optoelectronic semiconductor device comprising a first and a second current spreading structure
    18.
    发明授权
    Optoelectronic semiconductor device comprising a first and a second current spreading structure 有权

    公开(公告)号：US11715815B2

    公开(公告)日：2023-08-01

    申请号：US17053800

    申请日：2019-05-08

    Applicant: Osram OLED GmbH

    Inventor： Michael Völkl ,  Siegfried Herrmann

    IPC: H01L33/14 ,  H01L33/10 ,  H01L33/50

    CPC classification number: H01L33/14 ,  H01L33/10 ,  H01L33/502

    Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

    Radiation-Emitting Semiconductor Chip
    19.
    发明公开
    Radiation-Emitting Semiconductor Chip 审中-公开

    公开(公告)号：US20230231080A1

    公开(公告)日：2023-07-20

    申请号：US18186037

    申请日：2023-03-17

    Applicant: OSRAM OLED GmbH

    Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

    IPC: H01L33/46 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/42

    Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

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