公开(公告)号：US20110031577A1

公开(公告)日：2011-02-10

申请号：US12906858

申请日：2010-10-18

Applicant: Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L27/146

CPC classification number: H01L27/1446 ,  H01L31/1035 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

Abstract translation: 包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度 的氮，制造光电二极管阵列的方法和光学测量系统。 在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，该开口设置在一维或二维中，并且选择性地生长多个半导体层3a，3b 和包括开口中的吸收层3b的3c。

公开(公告)号：US20090057721A1

公开(公告)日：2009-03-05

申请号：US12202460

申请日：2008-09-02

Applicant: Kouhei Miura ,  Yasuhiro Iguchi

Inventor： Kouhei Miura ,  Yasuhiro Iguchi

IPC: H01L21/20 ,  H01L29/20

CPC classification number: H01L31/109 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L21/02664 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer 3 is grown on an InP substrate by the MBE method, and thereafter a heat treatment is provided at a temperature in the range of 600° C. or more and less than 800° C., whereby the average hydrogen concentration of the N-containing InGaAs layer 3 is made equal to or 2×1017/cm3 or less than.

Abstract translation: 提供了一种通过该方法制造的制造方法和半导体器件，其中可以在氢浓度降低的同时容易地制造半导体器件。 通过MBE法在InP衬底上生长含N的InGaAs层3，然后在600℃以上且小于800℃的温度下进行热处理，由此平均氢 使含有N的InGaAs层3的浓度为2×10 17 / cm 3以下。

公开(公告)号：US20050199976A1

公开(公告)日：2005-09-15

申请号：US11073322

申请日：2005-03-04

Applicant: Yasuhiro Iguchi

Inventor： Yasuhiro Iguchi

IPC: H01L31/10 ,  H01L29/06

CPC classification number: H01L27/1446

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.

Abstract translation: 背照式光电二极管阵列具有（a）第一导电型半导体基板，（b）第一导电型电极，其设置在半导体基板的后侧，并且具有一或二个开口 （c）设置在第一导电型电极的每个开口处的抗反射涂层，（d）形成在基板的正面侧的第一导电型吸收层，（e） 设置在吸收层上并具有比吸收层的吸收边长波长的吸收边缘波长的漏光波吸收层，（f）多个第二导电型区域， 光吸收层从上表面延伸到吸收层一定程度，并且在相反侧的抗反射涂层的位置一一或二维地排列，（g）一个 设置在每个第二导电型区域的顶表面上的导电型电极。

公开(公告)号：US06885075B2

公开(公告)日：2005-04-26

申请号：US10307278

申请日：2002-12-02

Applicant: Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi

Inventor： Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi

IPC: G02B6/12 ,  G02B6/42 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/00

CPC classification number: H01L31/1035 ,  G02B6/12004 ,  G02B6/4246 ,  G02B2006/12104 ,  G02B2006/12147 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/0352 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength λg of the absorption layer is shorter than the receiving signal wavelength λ2 but longer than noise wavelength λ1(λ1

Abstract translation: 光电二极管（A）包括基板，具有带隙波长并包括pn结的光接收层和至少具有带隙波长lambdag的吸收层。 吸收层中的一个夹在基板和光接收层之间，吸收层的带隙波长lambdag比接收信号波长λ2>短，但比噪声波长λ< 1（λ1/2）λ2）。 否则，光电二极管（B）在衬底上外延形成两个吸收层。 在衬底的顶表面上形成一个吸收层。 另一个吸收层形成在基板的底表面上。 吸收层消除噪声λ1。 PD对λ<1>不敏感。

公开(公告)号：US06518638B1

公开(公告)日：2003-02-11

申请号：US09566982

申请日：2000-05-09

Applicant: Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi

Inventor： Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi

IPC: H01L3301

CPC classification number: H01L31/1035 ,  G02B6/12004 ,  G02B6/4246 ,  G02B2006/12104 ,  G02B2006/12147 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/0352 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength &lgr;g. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength &lgr;g of the absorption layer is shorter than the receiving signal wavelength &lgr;2 but longer than noise wavelength &lgr;1(&lgr;1

Abstract translation: 光电二极管（A）包括衬底，具有带隙波长并包括pn结的光接收层和至少具有带隙波长lambdg的吸收层。 吸收层中的一个被夹在基板和光接收层之间，吸收层的带隙波长lambdg比接收信号波长lambd2短，但比噪声波长lambd1（lambd1

公开(公告)号：US06516743B2

公开(公告)日：2003-02-11

申请号：US09773545

申请日：2001-02-02

Applicant: Yasuhiro Iguchi ,  Sosuke Sowa

Inventor： Yasuhiro Iguchi ,  Sosuke Sowa

IPC: H01L2138

CPC classification number: H01L21/67109 ,  H01L21/2233

Abstract: An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing an object wafer and an exhaustion hole for exhaling gases, a slider having a frame and a cap plate for attaching to or detaching from the frame, the frame having serially aligning M rooms with an open bottom and a rack being separated from each other by (M−1) partition walls, a manipulating bar for sliding the slider upon the base plank forward or backward in the direction, a tube for enclosing the base plank and the slider and for being capable of being made vacuous, a heater surrounding the tube for heating the slider, each rack of the rooms being allocated with a Zn-diffusion material and a V element material (or a non-doped capping wafer) in turn for aligning the rooms into repetitions of a V element room and a diffusion room. The V element room or the capping wafer covers and protects the object wafer during the heating step. During the diffusion step, the diffusion room covers the object wafer for diffusing Zn into the wafer.

Abstract translation: 将LPE（液相外延）装置转移到用于将Zn扩散到III-V族化合物半导体中的Zn扩散装置。 Zn扩散装置包括沿着方向延伸的底板，具有用于存储物体晶片的晶片储存腔和用于呼出气体的排气孔;具有框架的滑块和用于附接到框架或从框架拆卸的盖板 （M-1）分隔壁彼此分离的具有开放底部和齿条的M个房间的框架，用于将滑块在基板上沿着该方向向前或向后滑动的操纵杆，用于 封闭基板和滑块并且能够被制成真空的围绕管的加热器的加热器，每个机架的房间被分配有Zn扩散材料和V元件材料（或非掺杂的 盖子晶片）反过来将房间对准V元件室和扩散室的重复。 V元件室或封盖晶片在加热步骤期间覆盖并保护对象晶片。 在扩散步骤期间，扩散室覆盖用于将Zn扩散到晶片中的目标晶片。

公开(公告)号：US06218684B1

公开(公告)日：2001-04-17

申请号：US09206156

申请日：1998-12-07

Applicant: Yoshiki Kuhara ,  Yasuhiro Iguchi ,  Tadashi Saito ,  Hitoshi Terauchi

Inventor： Yoshiki Kuhara ,  Yasuhiro Iguchi ,  Tadashi Saito ,  Hitoshi Terauchi

IPC: H01L31072

CPC classification number: H01L31/109

Abstract: A half-transmittance photodiode usable as a photodetector in receivers for “ping-pong transmission” is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.

Abstract translation: 可用作“乒乓球传送”接收机中的光电检测器的半透射光电二极管的温度特性得到改善，使得可以在低温下使用半透射光电二极管。 p-n结形成在缓冲层中，而不是在吸收层中。

公开(公告)号：US08809985B2

公开(公告)日：2014-08-19

申请号：US13979586

申请日：2012-01-07

Applicant: Yasuhiro Iguchi ,  Tadashi Saitoh ,  Yasushi Fujimura ,  Kazunori Tanaka

Inventor： Yasuhiro Iguchi ,  Tadashi Saitoh ,  Yasushi Fujimura ,  Kazunori Tanaka

IPC: H01L31/0232 ,  H01L27/146 ,  G02B3/00 ,  H01L31/18

CPC classification number: H01L31/02327 ,  G02B3/00 ,  G02B3/0075 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14685 ,  H01L31/184

Abstract: A light receiving device includes a microlens 21 located in each of regions corresponding to pixels, the microlens being disposed on a rear surface of an InP substrate 1. The microlens is formed by using a resin material having a range of a transmittance of light in the wavelength region between 0.7 and 3 μm of 25% or less, the transmittance being 70% or more.

Abstract translation: 光接收装置包括位于与像素对应的区域的每个区域中的微透镜21，微透镜设置在InP衬底1的后表面上。微透镜通过使用具有在 0.7〜3μm之间的波长区域为25％以下，透射率为70％以上。

公开(公告)号：US08546758B2

公开(公告)日：2013-10-01

申请号：US13119619

申请日：2009-07-24

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: G01J5/20 ,  H01L29/861

CPC classification number: G01N21/3563 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/2803 ,  G01N21/359 ,  G01N33/025 ,  G01N2201/08 ,  G01N2201/129 ,  H01L27/14678 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/109 ,  Y02E10/544

Abstract: A food quality examination device using a high-sensitivity light-receiving element. The light-receiving element includes a III-V compound semiconductor stacked structure including an absorption layer having a pn-junction therein, wherein the absorption layer has a multiquanturn well structure composed of group III-V compound semiconductors, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, a diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate,the bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V semiconductor substrate,the concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the absorption layer.

Abstract translation: 使用高灵敏度光接收元件的食品质量检查装置。 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结由 选择性地将杂质元素扩散到吸收层中，将由III-V族半导体组成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体相邻侧相反侧的吸收层接触 扩散浓度分布控制层的带隙能量比III-V族半导体衬底的能隙小，则扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到5×1016 / cm3， 较少吸收层。

公开(公告)号：US08373156B2

公开(公告)日：2013-02-12

申请号：US13122926

申请日：2009-07-30

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L29/06 ,  H01L31/0232 ,  H01L31/102

CPC classification number: A61B5/1455 ,  A61B5/14532 ,  G01J3/0218 ,  G01J2003/2866 ,  G01N21/359 ,  G01N21/474 ,  H01L27/1446 ,  H01L31/035209 ,  H01L31/1035

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration. The biological component detection device is characterized in that an examination is conducted by receiving light having at least one wavelength of 3 μm or less, the wavelength being included in an absorption band of the biological component.

Abstract translation: 本发明提供一种生物成分检测装置，其通过使用其中暗电流减小而不使用冷却机构的InP基光电二极管，以高灵敏度检测生物成分，并且灵敏度延伸至1.8μm以上的波长 。 吸收层3具有由III-V族半导体构成的多量子阱结构，通过选择性地扩散吸收层中的杂质元素形成pn结15，并且吸收层中杂质元素的浓度为5× 1016 / cm3以下，扩散浓度分布控制层在扩散前的n型杂质浓度为2×1015 / cm3以下，扩散浓度分布控制层具有与吸收层相邻的部分，该部分具有 杂质浓度低。 生物成分检测装置的特征在于，通过接收具有3μm以下的波长的波长的波长包含在生物成分的吸收带中进行检查。