公开(公告)号：US10326067B2

公开(公告)日：2019-06-18

申请号：US14852125

申请日：2015-09-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Tapash Chakraborty ,  Robert Jan Visser

IPC: C07F19/00 ,  H01L35/24 ,  C07F11/00 ,  H01L35/34

Abstract: Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.

公开(公告)号：US12191139B2

公开(公告)日：2025-01-07

申请号：US17563024

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Robert Jan Visser ,  Prerna Goradia

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  B05D1/00 ,  B05D1/36

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：US20180350604A1

公开(公告)日：2018-12-06

申请号：US15992656

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Robert Jan Visser ,  Prerna Goradia ,  Tapash Chakraborty ,  Ranga Rao Arnepalli ,  Darshan Thakare ,  Geetika Bajaj

IPC: H01L21/288 ,  C23C16/448 ,  C23C16/06 ,  C23F1/00

Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.

公开(公告)号：US20180342388A1

公开(公告)日：2018-11-29

申请号：US15986178

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Robert Jan Visser ,  Prerna Goradia

IPC: H01L21/02 ,  B05D1/00

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：US20170092533A1

公开(公告)日：2017-03-30

申请号：US14957380

申请日：2015-12-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash Chakraborty ,  Mark Saly ,  Rana Howlader ,  Eswaranand Venkatasubramanian ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  David Thompson

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/76802 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0226 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.

公开(公告)号：US20160172238A1

公开(公告)日：2016-06-16

申请号：US14569301

申请日：2014-12-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Deenesh Padhi ,  Alexandros T. Demos ,  Tapash Chakraborty ,  Geetika Bajaj ,  Robert Jan Visser

IPC: H01L21/768

CPC classification number: H01L21/76831

Abstract: A method of forming features in a low-k dielectric layer is described. A via, trench or a dual damascene structure may be present in the low-k dielectric layer prior to depositing a conformal hermetic layer. The conformal hermetic layer is configured to keep water and contaminants out. Some of the same conformal hermetic layer may deposit on the underlying copper. The portion of the conformal hermetic layer on the underlying copper is preferentially removed but the beneficial portion on the low-k dielectric layer remains. The selective removal of the conformal hermetic layer may be accomplished using a dry etch or a wet etch using a weak organic acid.

Abstract translation: 描述了在低k电介质层中形成特征的方法。 在沉积保形密封层之前，可以在低k电介质层中存在通孔，沟槽或双镶嵌结构。 保形密封层被配置成保持水和污染物排出。 一些相同的保形密封层可能沉积在下面的铜上。 优先除去底层铜上的共形密封层的部分，但是在低k电介质层上的有益部分保留。 选择性去除保形密封层可以使用干蚀刻或使用弱有机酸的湿蚀刻来实现。

公开(公告)号：US11926903B2

公开(公告)日：2024-03-12

申请号：US17836578

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Visweswaren Sivaramakrishnan ,  Nilesh Chimanrao Bagul ,  Bahubali S. Upadhye

IPC: C23F1/00 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  C23F1/44 ,  C23F4/02

CPC classification number: C23F1/00 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  C23F1/44 ,  C23F4/02

Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

公开(公告)号：US11388822B2

公开(公告)日：2022-07-12

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K1/02 ,  H05K3/00 ,  H05K3/06 ,  H05K3/28 ,  H05K3/46 ,  H05K3/38 ,  B32B15/08 ,  B32B7/12

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US20220130663A1

公开(公告)日：2022-04-28

申请号：US17563024

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Robert Jan Visser ,  Prerna Sonthalia Goradia

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/455

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：US20180261500A1

公开(公告)日：2018-09-13

申请号：US15452394

申请日：2017-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

IPC: H01L21/768 ,  H01L21/32

Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.