公开(公告)号：US20230032495A1

公开(公告)日：2023-02-02

申请号：US17872054

申请日：2022-07-25

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Michael Givens

IPC: H01L21/3065 ,  H01L21/67

Abstract: The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.

公开(公告)号：US20220084817A1

公开(公告)日：2022-03-17

申请号：US17472981

申请日：2021-09-13

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20220028870A1

公开(公告)日：2022-01-27

申请号：US17462181

申请日：2021-08-31

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Jan Willem Maes

IPC: H01L27/115 ,  H01L49/02 ,  H01L21/02 ,  H01L27/11582

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

公开(公告)号：US11139308B2

公开(公告)日：2021-10-05

申请号：US15377439

申请日：2016-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Jan Willem Maes

IPC: H01L27/115 ,  H01L49/02 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

公开(公告)号：US10923361B2

公开(公告)日：2021-02-16

申请号：US16659012

申请日：2019-10-21

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10280519B2

公开(公告)日：2019-05-07

申请号：US15835262

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20170352550A1

公开(公告)日：2017-12-07

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20250167013A1

公开(公告)日：2025-05-22

申请号：US19027387

申请日：2025-01-17

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US12237182B2

公开(公告)日：2025-02-25

申请号：US18589252

申请日：2024-02-27

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/67

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US20240339493A1

公开(公告)日：2024-10-10

申请号：US18624808

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Varun Sharma ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Andrea Illiberi ,  Jerome Innocent ,  Aditya Chauhan

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/0607 ,  H01L21/02362 ,  H01L28/75 ,  H01L29/7786

Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.