公开(公告)号：US11094535B2

公开(公告)日：2021-08-17

申请号：US15892728

申请日：2018-02-09

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/32 ,  H01L21/027 ,  H01L21/321 ,  H01L21/3105

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20180233350A1

公开(公告)日：2018-08-16

申请号：US15892728

申请日：2018-02-09

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L21/768 ,  H01L21/67 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L23/31

CPC classification number: H01L21/0228 ,  H01L21/02118 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0272 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67069 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53295

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US12217954B2

公开(公告)日：2025-02-04

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20240218500A1

公开(公告)日：2024-07-04

申请号：US18397722

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Anirudhan Chandrasekaran ,  Daniele Chiappe ,  Eva E. Tois ,  Viraj Madhiwala ,  Andrea Illiberi ,  Shaoren Deng

IPC: C23C16/04 ,  C23C16/18

CPC classification number: C23C16/04 ,  C23C16/18

Abstract: Methods for forming selective passivation layers on a first dielectric surface relative to a second metallic surface are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US20240191347A1

公开(公告)日：2024-06-13

申请号：US18535440

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Monica Thukkaram ,  Aditya Chauhan ,  Andrea Illiberi ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Alessandra Leonhardt ,  Michael Eugene Givens

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/407 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.

公开(公告)号：US20240076775A1

公开(公告)日：2024-03-07

申请号：US18303095

申请日：2023-04-19

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  B01J31/12 ,  C23C16/455

CPC classification number: C23C16/401 ,  B01J31/122 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US11898240B2

公开(公告)日：2024-02-13

申请号：US17216466

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/04 ,  B01J21/02 ,  C23C22/82 ,  C23C22/77 ,  C23C16/40

CPC classification number: C23C16/04 ,  B01J21/02 ,  C23C16/402 ,  C23C22/77 ,  C23C22/82

Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20230243032A1

公开(公告)日：2023-08-03

申请号：US18103594

申请日：2023-01-31

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Andrea Illiberi ,  Varun Sharma ,  Bart Vermeulen ,  Michael Givens

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/30 ,  C23C16/45553 ,  C23C16/56

Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

公开(公告)号：US20220123131A1

公开(公告)日：2022-04-21

申请号：US17499970

申请日：2021-10-13

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Giuseppe Alessio Verni ,  Qi Xie ,  Michael Eugene Givens ,  Varun Sharma ,  Andrea Illiberi

IPC: H01L29/66 ,  H01L21/02

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate. The threshold voltage shifting layers are particularly useful for metal oxide semiconductor field effect transistors.

公开(公告)号：US20220068634A1

公开(公告)日：2022-03-03

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  H01L21/285 ,  B08B3/08 ,  B08B5/00 ,  C23C16/02 ,  C11D11/00 ,  C11D7/26 ,  C11D7/24 ,  C11D7/02

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.