公开(公告)号：US20220415677A1

公开(公告)日：2022-12-29

申请号：US17848933

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Rutvij Naik ,  Xing Lin ,  Alexandros Demos ,  Hamed Esmaeilzadehkhosravieh

IPC: H01L21/67 ,  C23C16/48 ,  G02B5/02

Abstract: A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200266208A1

公开(公告)日：2020-08-20

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200040458A1

公开(公告)日：2020-02-06

申请号：US16055532

申请日：2018-08-06

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  B01J4/00

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20240203734A1

公开(公告)日：2024-06-20

申请号：US18540329

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Maritza Mujica ,  Ernesto Suarez ,  Amir Kajbafvala ,  Rami Khazaka ,  Arum Murali ,  Frederick Aryeetey ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Bibek Karki

IPC: H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L29/78

CPC classification number: H01L21/0262 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02532 ,  H01L21/02579 ,  H01L29/7848 ,  H01L29/167

Abstract: Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.

公开(公告)号：US20230420309A1

公开(公告)日：2023-12-28

申请号：US18212827

申请日：2023-06-22

Applicant: ASM IP Holding B.V.

Inventor： Omar Elleuch ,  Robinson James ,  Peter Westrom ,  Caleb Miskin ,  Alexandros Demos

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L22/20 ,  H01L21/02532 ,  H01L21/3065

Abstract: A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.

公开(公告)号：US20230386889A1

公开(公告)日：2023-11-30

申请号：US18448638

申请日：2023-08-11

Applicant: ASM IP Holding, B.V.

Inventor： Saket Rathi ,  Shiva K.T. Rajavelu Muralidhar ,  Siyao Luan ,  Alexandros Demos ,  Xing Lin

IPC: H01L21/687 ,  H01L21/268 ,  H01L21/67 ,  H01L21/324

CPC classification number: H01L21/6875 ,  H01L21/2686 ,  H01L21/67253 ,  H01L21/67115 ,  H01L21/324 ,  H01L21/68735 ,  H01L21/67248

Abstract: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.

公开(公告)号：US11764101B2

公开(公告)日：2023-09-19

申请号：US17075504

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Saket Rathi ,  Shiva K. T. Rajavelu Muralidhar ,  Siyao Luan ,  Alexandros Demos ,  Xing Lin

IPC: H01L21/324 ,  H01L21/687 ,  H01L21/67 ,  H01L21/268 ,  H01L21/683

CPC classification number: H01L21/6875 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68735 ,  H01L21/67248

Abstract: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.

公开(公告)号：US20230125884A1

公开(公告)日：2023-04-27

申请号：US18048145

申请日：2022-10-20

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Arun Murali ,  Frederick Aryeetey ,  Caleb Miskin ,  Alexandros Demos

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/67 ,  H01L21/687

Abstract: A material layer deposition method includes supporting a substrate in a preclean module and exposing the substrate to a preclean etchant while supported within the preclean module. The substrate is transferred to a deposition module and exposed to an adsorbate while supported within the deposition module. A material layer is the deposited onto the substrate while supported within the deposition module subsequent to exposing the substrate to the adsorbate. Semiconductor processing systems and computer program products are also described.