公开(公告)号：US20170029948A1

公开(公告)日：2017-02-02

申请号：US14811435

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Juhani Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法和装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，并且可以在不同的温度下将基板与不同的反应物接触，以便最小化或防止不期望的气相反应，化学气相沉积（CVD）和/或原子层沉积（ALD）反应 在不同的反应物或反应物的组合之间。

公开(公告)号：US12077854B2

公开(公告)日：2024-09-03

申请号：US17810773

申请日：2022-07-05

Applicant: ASM IP Holding, B.V.

Inventor： Dieter Pierreux ,  Theodorus G. M. Oosterlaken ,  Herbert Terhorst ,  Lucian Jdira ,  Bert Jongbloed

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/4583 ,  C23C16/52

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

公开(公告)号：US20230008684A1

公开(公告)日：2023-01-12

申请号：US17810759

申请日：2022-07-05

Applicant: ASM IP Holding B.V

Inventor： Theodorus G.M. Oosterlaken ,  Adriaan Garssen ,  Herbert Terhorst ,  Lucian Jdira

IPC: F27B17/00 ,  H01L21/67 ,  F27B5/16

Abstract: An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7; a heater 9 surrounding the process tube 5; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7. An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19. The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

公开(公告)号：US20210366742A1

公开(公告)日：2021-11-25

申请号：US17323288

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jeroen de Jonge ,  Sumit Sachdeva ,  Lucian Jdira ,  Julien Laurentius Antonius Maria Keijser ,  Theodorus G.M. Oosterlaken

IPC: H01L21/67 ,  H01L21/673 ,  F27B17/00 ,  F27D5/00

Abstract: The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.

公开(公告)号：US10343907B2

公开(公告)日：2019-07-09

申请号：US14660789

申请日：2015-03-17

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Cornelius A. van der Jeugd ,  Lucian Jdira ,  Radko G. Bankras ,  Theodorus G. M. Oosterlaken

IPC: H01L21/02 ,  C01B15/017 ,  H01L21/67

Abstract: In some embodiments, a system is disclosed for delivering hydrogen peroxide to a semiconductor processing chamber. The system includes a process canister for holding a H2O2/H2O mixture in a liquid state, an evaporator provided with an evaporator heater, a first feed line for feeding the liquid H2O2/H2O mixture to the evaporator, and a second feed line for feeding the evaporated H2O2/H2O mixture to the processing chamber, the second feed line provided with a second feed line heater. The evaporator heater is configured to heat the evaporator to a temperature lower than 120° C. and the second feed line heater is configured to heat the feed line to a temperature equal to or higher than the temperature of the evaporator.

公开(公告)号：US10103040B1

公开(公告)日：2018-10-16

申请号：US15476035

申请日：2017-03-31

Applicant: ASM IP Holding B.V.

Inventor： Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01S5/42 ,  H01S5/042

Abstract: The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for heating the substrate. The heater may comprise a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate held by the substrate holder to heat the substrate.

公开(公告)号：US20180286711A1

公开(公告)日：2018-10-04

申请号：US15476035

申请日：2017-03-31

Applicant: ASM IP Holding B.V.

Inventor： Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01S5/42 ,  H01S5/042

Abstract: The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for heating the substrate. The heater may comprise a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate held by the substrate holder to heat the substrate.

公开(公告)号：US20230002889A1

公开(公告)日：2023-01-05

申请号：US17850141

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Arjen Klaver ,  Lucian Jdira ,  Marina Mariano ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Bert Jongbloed ,  Subir Parui

IPC: C23C16/30 ,  C23C16/54 ,  C23C16/52

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

公开(公告)号：US20220412652A1

公开(公告)日：2022-12-29

申请号：US17844911

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G.M. Oosterlaken ,  Lucian Jdira ,  Herbert Terhorst

IPC: F27B5/04 ,  F27D1/18 ,  F27D3/00 ,  F27B5/16 ,  F27B5/18 ,  F27B5/10

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

公开(公告)号：US11230766B2

公开(公告)日：2022-01-25

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/455 ,  C23C16/48 ,  C23C16/50 ,  C23C16/44

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.