公开(公告)号：US11171025B2

公开(公告)日：2021-11-09

申请号：US16704835

申请日：2019-12-05

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong

IPC: C23C16/40 ,  H01L21/673

Abstract: Provided is an exhaust device with improved exhaust efficiency. The exhaust device includes: a plurality of exhaust ports in communication with an exhaust space and configured to exhaust gas in a first direction; a plurality of exhaust paths respectively connected to the plurality of exhaust ports; and a transfer port in communication with the plurality of exhaust paths and configured to exhaust gas in a second direction. More uniform processing of a substrate may be achieved through a substrate processing device using such an exhaust device.

公开(公告)号：US20210166925A1

公开(公告)日：2021-06-03

申请号：US17102419

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/32 ,  C23C16/44

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

公开(公告)号：US20210166924A1

公开(公告)日：2021-06-03

申请号：US17102416

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/32

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

公开(公告)号：US20210035785A1

公开(公告)日：2021-02-04

申请号：US16936343

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.

公开(公告)号：US20200234989A1

公开(公告)日：2020-07-23

申请号：US16704835

申请日：2019-12-05

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong

IPC: H01L21/673

Abstract: Provided is an exhaust device with improved exhaust efficiency. The exhaust device includes: a plurality of exhaust ports in communication with an exhaust space and configured to exhaust gas in a first direction; a plurality of exhaust paths respectively connected to the plurality of exhaust ports; and a transfer port in communication with the plurality of exhaust paths and configured to exhaust gas in a second direction. More uniform processing of a substrate may be achieved through a substrate processing device using such an exhaust device.