公开(公告)号：US09666443B2

公开(公告)日：2017-05-30

申请号：US14769426

申请日：2014-02-26

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Emiel Peeters

IPC: H01L21/31 ,  H01L21/3105 ,  B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  G03F7/00 ,  H01L21/768

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/76802

Abstract: Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.

公开(公告)号：US20140245948A1

公开(公告)日：2014-09-04

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van Der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Marggaretha De Ruiter

IPC: C30B1/12

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：US10410914B2

公开(公告)日：2019-09-10

申请号：US15313515

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Andre Bernardus Jeunink ,  Emiel Peeters

IPC: H01L21/768 ,  G03F7/00 ,  C30B1/04 ,  C30B29/58 ,  G03F7/20 ,  G03F7/30 ,  B81C1/00 ,  C09K13/00 ,  G03F7/004 ,  H01L21/027 ,  H01L21/308

Abstract: A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.

公开(公告)号：US10240250B2

公开(公告)日：2019-03-26

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Margaretha De Ruiter

IPC: C30B1/12 ,  B81C1/00 ,  G03F7/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

公开(公告)号：US09513553B2

公开(公告)日：2016-12-06

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/20 ,  G03F7/26 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B05D1/32 ,  B05D3/10

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。